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{{:Specific Process Knowledge/Lithography/authors_generic}}
{{cc-nanolab}}


'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Pretreatment click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Pretreatment click here]'''
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==HMDS==
==HMDS==
In the HMDS priming process, the -OH groups on the surface of the substrate are replaced with Si(CH<sub>3</sub>)<sub>3</sub>, thus changing the surface from hydrophilic to (more) hydrophobic. Substrates with surfaces of silicon or it's oxides or nitrides all work very well with HMDS pretreatment. Other semiconductors, insulators, or metals that form -OH groups on the surface may be suitable as well. The shelf life of substrates primed using HMDS (vapor phase) is long, maybe even several weeks.
In the HMDS priming process, the -OH groups on the surface of the substrate are replaced with Si(CH<sub>3</sub>)<sub>3</sub>, thus changing the surface from hydrophilic to (more) hydrophobic. Substrates with surfaces of silicon, or its oxides/nitrides, all work very well with HMDS pretreatment.  
 
Other semiconductors, insulators, or metals that form -OH groups on the surface may be suitable as well. The shelf life of substrates primed using HMDS (vapor phase) is long, maybe even several weeks.


==Dip/spin-on adhesion promoter==
==Dip/spin-on adhesion promoter==
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==Comparing pretreatment methods==
==Comparing pretreatment methods==


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!
!
![[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]]
![[Specific Process Knowledge/Lithography/Pretreatment#HMDS_2|HMDS]]
![[Specific Process Knowledge/Lithography/Pretreatment#Buffered HF-Clean|Buffered HF-Clean]]
![[Specific Process Knowledge/Lithography/Pretreatment#Buffered HF-Clean|Buffered HF-Clean]]
![[Specific Process Knowledge/Lithography/Pretreatment#Oven 250C|Oven 250C]]
![[Specific Process Knowledge/Lithography/Pretreatment#Oven 250C|Oven 250C]]
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|-style="background:WhiteSmoke; color:black"
!Restrictions
!Restrictions
|Type IV and resist/polymer on polymer substrate
|Low Tg polymer substrates, type IV films, and resist/polymer on substrate


i.e. no resist coated wafers or crystalbonded chips!
i.e. no resist coated wafers or Crystalbonded chips!
|Wafers with metal is not allowed
|Wafers with metal is not allowed
|Resist is not allowed
|Resist is not allowed
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Overview of what pretreatment is used for various surfaces at DTU Nanolab. Parentheses () indicate the method is not the optimal choice, or that the information is taken from product information supplied by manufacturers.
Overview of what pretreatment is used for various surfaces at DTU Nanolab. Parentheses () indicate the method is not the optimal choice, or that the information is taken from product information supplied by manufacturers.
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=HMDS=
=HMDS=
The chemical treatment with hexamethyldisilazane (HMDS) before the spin coating can be used to promote the adhesion for photoresist. Vapor priming with HMDS leaves a mono-layer of TMS (trimethylsilyl) on the Si or SiO<sub>2</sub> surface. The process dehydrates the substrate surface, and lowers the surface tension.
The chemical treatment with hexamethyldisilazane (HMDS) before the spin coating can be used to promote the adhesion for photoresist. Vapor priming with HMDS leaves a mono-layer of TMS (trimethylsilyl) on the Si or SiO<sub>2</sub> surface. The process dehydrates the substrate surface, and lowers the surface energy to promote better wetting.


The molecular formula for hexamethyldisilazane, or bis(trimethylsilyl)amine, is C<sub>6</sub>H<sub>19</sub>NSi<sub>2</sub>. Here is a schematic overview of HMDS treatment of silicon-oxide surface.
The molecular formula for hexamethyldisilazane, or bis(trimethylsilyl)amine, is C<sub>6</sub>H<sub>19</sub>NSi<sub>2</sub>.


[[Image:Hmds new.jpg|500x500px|thumb|left|Priming of oxide-forming substrates by HMDS treatment.]]
[[File:HMDS priming schematic.png|400px|thumb|right|Schematic of the HMDS vapor priming process]]


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==Comparing HMDS priming==
==Comparing HMDS priming==


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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
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|style="background:WhiteSmoke; color:black"|


1 min / wafer
1-2 min / wafer
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|-


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==Oven: HMDS 2==
==Oven: HMDS 2==
[[Image:HMDS2.jpg|300x300px|thumb|The Oven: HMDS 2 oven is located in E-5.]]
[[Image:HMDS2.jpg|400px|thumb|The Oven: HMDS 2 oven is located in E-5.]]


The user manual, user APV, and contact information can be found in LabManager:
The user manual, user APV, and contact information can be found in LabManager:
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==Spin Coater: Gamma UV==
==Spin Coater: Gamma UV==
[[Image:HMDS gammaUV.jpg|300x300px|thumb|HMDS module in Spin Coater: Gamma UV in E-5.]]
[[Image:HMDS gammaUV.jpg|400px|thumb|HMDS module (top) in Spin Coater: Gamma UV in E-5.]]


The user manual, user APV, and contact information can be found in LabManager:
The user manual, user APV, and contact information can be found in LabManager:
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==Spin Coater: Gamma e-beam & UV==
==Spin Coater: Gamma e-beam & UV==


[[image:Gamma_4M_-_E-beam_&_UV_full.JPG|300x300px|thumb|Spin Coater: Gamma e-beam & UV in E-5.]]
[[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|thumb|Spin Coater: Gamma e-beam & UV in E-5.]]


The user manual, user APV, and contact information can be found in LabManager:
The user manual, user APV, and contact information can be found in LabManager:
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=Buffered HF-Clean=
=Buffered HF-Clean=
[[image:BHF clean.JPG|300x300px|thumb||BHF clean wetbench 04 in D-3.]]
[[image:BHF clean.JPG|400px|thumb||BHF clean wetbench 04 in D-3.]]


Another commonly used method to render the surface of silicon wafers hydrophobic is the dilute HF dip.
Another commonly used method to render the surface of silicon wafers hydrophobic is the dilute HF dip.
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'''Process information:'''
Additional information about the spin coater and processes can be found in Labadviser:


[[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]]
[[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]]
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=Oven 250C=
{{:Specific Process Knowledge/Lithography/Pretreatment/Oven_250C}}
[[Image:Oven_250_degrees_for_pretreatment_cr3.jpg|300x300px|thumb|Oven 250C for pretreatment in Cx-1]]
The oven is typically used for dehydration pretreatment, of Si and glass substrates, to promote the resist adhesion. We recommend placing the wafers in a metal carrier in the oven for at least for 4 hours, or overnight, and spin coat resist on them as soon as possible after removing them from the oven.
 
'''The user manual, and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=117 Oven 250C]'''
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