Specific Process Knowledge/Lithography/MiR: Difference between revisions
No edit summary |
|||
| (2 intermediate revisions by the same user not shown) | |||
| Line 1: | Line 1: | ||
{{:Specific Process Knowledge/Lithography/authors_generic}} | |||
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/MiR click here]''' | |||
[[Category: Lithography|Resist]] | |||
[[Category: Resist|AZ MiR 701]] | |||
__TOC__ | __TOC__ | ||
| Line 23: | Line 30: | ||
*PEB time: 60 s | *PEB time: 60 s | ||
Since the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1. | During exposure, interaction between the incoming light and the light reflected by the substrate can cause a standing wave to form in the resist (especially true for single line/wavelength exposure). This leads to a wavy sidewall after development. The standing wave pattern can be removed by introducing a post-exposure bake before development, which allows the activated PAC to diffuse into unactivated regions, thus smoothing the sidewall. The recommended PEB for MiR is 60 s at 110°C (for a 1 - 2 µm film). Thicker coatings may require longer bake, and substrate thickness and material may also affect the required baking time. | ||
Since the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1.5 µm thick MiR resist film will be approximately 1.4 µm after PEB. | |||
==Development== | ==Development== | ||
'''Development speed:''' | '''Development speed:''' | ||
*Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min | *Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min | ||
Latest revision as of 14:27, 5 April 2023
This section, including all images and pictures, is created by DTU Nanolab staff unless otherwise stated.
Feedback to this page: click here
Resist description
AZ MiR 701 is a positive UV photoresist. It is considered to have high selectivity for dry etching.
Spin coating
Typical spin parameters:
- Spin off: 30-60 s
- Soft bake: 60 s @ 90°C in proximity
Exposure
Dehydration of resist film:
During exposure in the maskless aligners, MiR can be sensitive to dehydration by the air flow applied by the pneumatic auto-focus mechanism. This may lead to insufficient development, especially for small substrates. This problem can be alleviated by switching to the overview camera for a period of 1 minute before starting the exposure, or simply by parking the writehead away from the exposure location for 1 minute before starting the exposure.
The effect can also be reduced by increasing the soft bake.
Post-exposure bake
Typical PEB parameters:
- PEB temperature: 110°C
- PEB time: 60 s
During exposure, interaction between the incoming light and the light reflected by the substrate can cause a standing wave to form in the resist (especially true for single line/wavelength exposure). This leads to a wavy sidewall after development. The standing wave pattern can be removed by introducing a post-exposure bake before development, which allows the activated PAC to diffuse into unactivated regions, thus smoothing the sidewall. The recommended PEB for MiR is 60 s at 110°C (for a 1 - 2 µm film). Thicker coatings may require longer bake, and substrate thickness and material may also affect the required baking time.
Since the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1.5 µm thick MiR resist film will be approximately 1.4 µm after PEB.
Development
Development speed:
- Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min