Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions

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|-style="background:Black; color:White"
|-style="background:Black; color:White"
! Parameter
! Parameter
|Recipe name: '''no name''' (testing recipe)  
|Recipe name: '''Al2O3 Etch'''   
|-
|-
|Coil Power [W]
|Coil Power [W]
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|30
|30
|-
|-
|Pressure [mTorr]
|Pressure [mTorr]
|4
|4
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<br clear="all" />
<br clear="all" />
==Al2O3 etching by Sanjeev Vishal Kota sanvis@nanolab==
*[[Media:Alumina etch information.pptx|Presentation made by Sanvis @DTU Nanolab, click to view]]
{| border="1" cellspacing="2" cellpadding="2"
|-style="background:Black; color:White"
! Parameter
|Nanoscale Al2O3 etch
|Microscale Al2O3 etch
|-
|Coil Power [W]
|300
|500
|-
|Platen Power [W]
|15
|70
|-
|Platen temperature [<sup>o</sup>C]
|0
|0
|-
|BCl3 flow [sccm]
|20
|40
|-
|Cl<sub>2</sub> flow [sccm]
|7
|15
|-
|Pressure [mTorr]
|1.2
|3.0
|-
|}
{| border="2" cellspacing="2" cellpadding="3"
|-style="background:DarkGray; color:White"
!Material to be etched
!Nanoscale Al2O3 etch
!Microscale Al2O3 etch
|-
|Etch rate
|'''6.25 nm/min on 6" wafer''',  ''Summer sanvis@nanolab''
|'''25 nm/min on small samples on Si carrier''', ''Summer 2022 sanvis@nanolab''
|-
|}
<br clear="all" />
==Al2O3 etching by bghe@nanolab==
===Recipes===
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Al2O3 etch'''
|-
! Parameter
! width="200" | Recipe 1:Al2O3 etch platen only
|-
! BCl<sub>3</sub> (sccm)
| 15
|-
! Ar (sccm)
| 15
|-
! Pressure (mTorr)
| 5
|-
! Coil power (W)
| 0
|-
! Platen power (W)
| 30
|-
! Temperature (<sup>o</sup>C)
| 20
|-
! Spacers (mm)
| 100 mm
|-
|}
===Results===
<gallery caption="Profile view, etch time 40 min, started with 380 nm zep resist" widths="400px" heights="325px" perrow="3">
Image:S038116_01.jpg
Image:S038116_12.jpg
Image:S038116_14.jpg
Image:S038116_16.jpg
Image:S038116_17.jpg
Image:S038116_18.jpg
</gallery>
<gallery caption="Top view after resist strip" widths="400px" heights="325px" perrow="3">
Image:metalS038116top_03.jpg
Image:metalS038116top_04.jpg
Image:metalS038116top_06.jpg
</gallery>

Latest revision as of 12:48, 14 May 2024

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Al2O3 etching with the ICP metal

Parameter Recipe name: Al2O3 Etch
Coil Power [W] 1200
Platen Power [W] 200
Platen temperature [oC] 0
BCl3 flow [sccm] 60
Cl2 flow [sccm] 30
Pressure [mTorr] 4


Material to be etched Etch rate using the above parameters
Al2O3
  • ~93nm/min (30s, 1/4 wafer on 6" carrier)
    2017-01-20 bghe@nanolab


Al2O3 etching by Sanjeev Vishal Kota sanvis@nanolab

Parameter Nanoscale Al2O3 etch Microscale Al2O3 etch
Coil Power [W] 300 500
Platen Power [W] 15 70
Platen temperature [oC] 0 0
BCl3 flow [sccm] 20 40
Cl2 flow [sccm] 7 15
Pressure [mTorr] 1.2 3.0


Material to be etched Nanoscale Al2O3 etch Microscale Al2O3 etch
Etch rate 6.25 nm/min on 6" wafer, Summer sanvis@nanolab 25 nm/min on small samples on Si carrier, Summer 2022 sanvis@nanolab


Al2O3 etching by bghe@nanolab

Recipes

Al2O3 etch
Parameter Recipe 1:Al2O3 etch platen only
BCl3 (sccm) 15
Ar (sccm) 15
Pressure (mTorr) 5
Coil power (W) 0
Platen power (W) 30
Temperature (oC) 20
Spacers (mm) 100 mm

Results

  • Profile view, etch time 40 min, started with 380 nm zep resist
  • Top view after resist strip
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