Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano11: Difference between revisions

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== The nano1.1 recipe ==
== The nano1.1 recipe ==

Latest revision as of 11:32, 28 June 2023

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Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab

The nano1.1 recipe

Recipe nano1.1
Recipe Gas C4F8 38 sccm, SF6 52 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 600 W CP, 50 W PP
Temperature 10 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 1815
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 1dfhj10 nm zep etched down to 6dgh4 nm



Nominal trench line width ' 30 60 90 120 150 Avg Std
Etch rates nm/min 183 218 232 249 256 228 29
Sidewall angle degs 95 94 94 93 93 94 1
Cd loss nm/edge -2 -4 -16 -15 -27 -13 10
CD loss foot nm/edge -2 -4 -16 -15 3 -7 9
Bowing 36 40 49 48 40 42 6
Curvature -55 -50 -39 -39 -42 -45 7
zep nm/min 172

Comments

The lower coil power run may still be isotropic-looking either because of a lack of deposition in the process, or because the bias increases as the coil power is decreased, hence the wafer would have received a more phyisically-aggressive process. Lower temp, lower coil + lower platen may be worth a look.