Specific Process Knowledge/Lithography/Development: Difference between revisions
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==Development | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Development click here]''' | ||
[[Category: Equipment|Lithography development]] | |||
[[Category: Lithography|Development]] | |||
__TOC__ | |||
==Development Comparison Table== | |||
{| class="wikitable" | |||
|- | |||
! | |||
! [[Specific_Process_Knowledge/Lithography/Development#Manual_beaker_development_in_fumehood|Manual beaker development]] | |||
! [[Specific_Process_Knowledge/Lithography/Development#Developer: SU8 (Wet Bench)|Developer: SU8 (Wet bench)]] | |||
! [[Specific_Process_Knowledge/Lithography/Development#Developer: E-beam 02|Developer: E-beam 02]] | |||
! [[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual 02|Developer: TMAH Manual 02]] | |||
! [[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|Developer: TMAH UV-lithography]] | |||
! [[Specific_Process_Knowledge/Lithography/Development/DUV_developer#Developer:_TMAH_Stepper|Developer: TMAH Stepper]] | |||
|- | |- | ||
!style=" | ! scope=row style="text-align: left;" | Purpose | ||
| | |||
Fall-back option if you have a process, which is not compatible with the automatic, or semi-automatic, tools | |||
<span style="color:red">Requires individual risk assessment for TMAH development!</span> | |||
Development of | | | ||
Development of: | |||
*SU-8 | *SU-8 | ||
| | |||
Development of | Development of: | ||
* | *ZEP 520A | ||
* | *AR-P 6200.xx (CSAR) | ||
| | |||
Development of | Development of: | ||
*AZ nLOF | *AZ nLOF | ||
*AZ MiR 701 | *AZ MiR 701 | ||
| Line 31: | Line 39: | ||
*AZ 4562 | *AZ 4562 | ||
*DUV resists | *DUV resists | ||
| | |||
Development of | Development of: | ||
*AZ nLOF | *AZ nLOF | ||
*AZ MiR 701 | *AZ MiR 701 | ||
| Line 39: | Line 47: | ||
*DUV resists | *DUV resists | ||
Post-exposure baking | Post-exposure baking | ||
| | |||
Development of | Development of: | ||
*DUV resists | *DUV resists | ||
Post-exposure baking | Post-exposure baking | ||
|- | |- | ||
!style=" | ! scope=row style="text-align: left;" | Developer | ||
| | | Process dependent | ||
| mr-Dev 600 (PGMEA) | |||
| | |||
mr-Dev 600 | *ZED N-50 | ||
*AR 600-50 | |||
(PGMEA) | | AZ 726 MIF (2.38% TMAH in water) | ||
| AZ 726 MIF (2.38% TMAH in water) | |||
N-50 | | AZ 726 MIF (2.38% TMAH in water) | ||
| | |||
AZ 726 MIF | |||
(2.38% TMAH in water) | |||
| | |||
AZ 726 MIF | |||
(2.38% TMAH in water) | |||
| | |||
AZ 726 MIF | |||
(2.38% TMAH in water) | |||
|- | |- | ||
!style=" | ! scope=row style="text-align: left;" | Method | ||
| | | Submersion | ||
| Submersion | |||
| | | Puddle | ||
Submersion | | Puddle | ||
| | | Puddle | ||
| Puddle | |||
| | |||
| | |||
Puddle | |||
| | |||
Puddle | |||
|- | |- | ||
! scope=row style="text-align: left;" | Handling | |||
| | |||
| | Manual handling in beakers | ||
Single wafer | *Chip bucket | ||
*Single wafer carrier | |||
Vacuum chuck for 2", | *Carrier for up to 5 wafers | ||
| | |||
*Chip bucket | |||
| | *Single wafer carrier | ||
Vacuum chuck | *Carrier for up to 6 wafers | ||
| | | | ||
Vacuum chuck | *Vacuum-free edge-grip chucks for 50 mm, 100 mm & 150 mm, and 200 mm substrates | ||
*Chip chuck for chips & 2" substrates | |||
| | |||
*Vacuum-free edge-grip chucks for 50 mm, 100 mm & 150 mm, and 200 mm substrates | |||
*Chip chuck for chips & 2" substrates | |||
| Vacuum chuck | |||
| Vacuum chuck | |||
|- | |- | ||
! scope=row style="text-align: left;" | Process temperature | |||
!style=" | | Room temperature | ||
| | | Room temperature | ||
| Room temperature | |||
| | | Room temperature | ||
Room temperature | | Room temperature | ||
| | | Room temperature | ||
Room temperature | |||
| | |||
Room temperature | |||
| | |||
Room temperature | |||
| | |||
Room temperature | |||
|- | |- | ||
! scope=row style="text-align: left;" | Process agitation | |||
| No agitation allowed | |||
| | | Magnetic stirrer | ||
Magnetic stirrer | | Rotation | ||
| | | Rotation | ||
Rotation | | Rotation | ||
| | | Rotation | ||
Rotation | |||
| | |||
Rotation | |||
| | |||
Rotation | |||
|- | |- | ||
! scope=row style="text-align: left;" | Process rinse | |||
| Process dependent | |||
| | | IPA | ||
IPA | | IPA | ||
| | | DI water | ||
IPA | | DI water | ||
| | | DI water | ||
DI water | |||
| | |||
DI water | |||
| | |||
DI water | |||
|- | |- | ||
!style=" | ! scope=row style="text-align: left;" | Substrate size | ||
| | |||
* Chips | |||
| | * 50 mm wafers | ||
* 100 mm wafers | |||
* 150 mm wafers | |||
| | |||
* Chips | |||
* 50 mm wafers | |||
* 100 mm wafers | * 100 mm wafers | ||
* 150 mm wafers | |||
* 200 mm wafers | |||
| | |||
* Chips (5mm to 2") | * Chips (5mm to 2") | ||
* 50 mm wafers | * 50 mm wafers | ||
* 100 mm wafers | * 100 mm wafers | ||
* 150 mm wafers | * 150 mm wafers | ||
* 200 mm wafers | |||
| | |||
* Chips (5mm to 2") | * Chips (5mm to 2") | ||
* 100 mm wafers | * 100 mm wafers | ||
* 150 mm wafers | * 150 mm wafers | ||
| | |||
* 100 mm wafers | * 100 mm wafers | ||
* 150 mm wafers | * 150 mm wafers | ||
* 200 mm wafers (may require tool change) | |||
| | |||
* 100 mm wafers | * 100 mm wafers | ||
* 150 mm wafers | * 150 mm wafers | ||
* 200 mm wafers (may require tool change) | * 200 mm wafers (may require tool change) | ||
|- | |- | ||
! scope=row style="text-align: left;" | Allowed materials | |||
| All cleanroom approved materials | |||
| | |||
Silicon and glass substrates | *Silicon and glass substrates | ||
*Film or pattern of all but Type IV | |||
Film or pattern of all but Type IV | | All cleanroom approved materials | ||
| | |||
| | *All cleanroom approved materials | ||
All cleanroom approved materials | *Film or pattern of all types | ||
| | |||
*Silicon and glass substrates | |||
All cleanroom approved materials | *Films, or patterned films, of any material except type IV (Pb, Te) | ||
| | |||
Film or pattern of all types | *Silicon, III-V, and glass substrates | ||
*Films, or patterned films, of any material except type IV (Pb, Te) | |||
Silicon and glass substrates | |||
Silicon, III-V, and glass substrates | |||
|- | |- | ||
! scope=row style="text-align: left;" | Batch size | |||
| 1 - 5 | |||
| 1 - 6 | |||
| 1 | |||
| 1 | |||
| 1 - 25 | |||
| 1 - 25 | |||
|} | |||
<br clear="all" /> | <br clear="all" /> | ||
| Line 384: | Line 355: | ||
--> | --> | ||
== | ==Manual beaker development in fumehood== | ||
[[ | Beaker development, in fume hood 09: UV development or fume hood 10: e-beam development, is a fall-back option if you have a process, which is not compatible with the automatic, or semi-automatic, tools. We always recommend using, or at least trying, the automatic and semi-automatic tools, instead of using manual beaker development. | ||
Manual beaker development is necessary for some processes, but should be avoided if possible, due to the fact that it is notoriously difficult to get a stable repeatable process - especially when multiple users are sharing the same process; everybody simply does things a bit different from each other, which leads to changes in the process outcome. Some processes have a very narrow process window, which makes them inherently sensitive to small changes in the development. The manual development also has a much greater chance of producing particles, both from the operator and the environment. | |||
Finally the safety of the operator is at a significantly higher risk, since any manual handling of chemicals carries the risk of accidental spills with it. This is especially problematic if the developer is TMAH based, where direct skin exposure of >1% TMAH on a few percent of the body must be treated as a life-threatening event. | |||
===Special rules for manual beaker development of TMAH=== | |||
*Automatic agitation methods are not allowed - this includes magnetic stirring or sonication | |||
*Manual agitation methods, which create large waves or turbulence in the development solution, are not allowed | |||
*Users must submit a risk assessment for any process requiring manual beaker development of TMAH based developers | |||
*Users requiring manual beaker development of TMAH based developers must additionally provide valid reasons for not using the already available automatic and semi-automatic tools | |||
===Standard manual beaker development procedure=== | |||
[[File:Beaker_development_v1.png|600px|thumb|Standard procedure for manual beaker development in fume hood:<br>1) Submerge exposed substrate into development solution<br>2) When timer ends, move substrate directly into Rinse 1<br>3) After a few seconds, move substrate into Rinse 2*<br>4) Remove developed substrate for drying<br>(*It is allowed to omit the Rinse 2 step)|right]] | |||
The standard procedure for manual beaker development in a fume hood is as follows: | |||
#Prepare development process | |||
#Perform development | |||
#Clean up | |||
'''Prepare development process''' | |||
*Write the chemical label, which must always be present in your chemical setup - your write your label <i>before</i> pouring the chemical | |||
*Find the beakers required for your process | |||
*Find the items required for holding/submerging your substrate during the process | |||
*Find carriers or other storage units for placing your substrate after the process has finished | |||
*Find a timer - make sure it works as you expect it to, before submerging your substrate into the development solution and discovering that the timer is in fact broken | |||
*Get some cleanroom wipes and keep them nearby, for wiping any drops spilled during handling | |||
*<span style="color:red">Do not cover too many of the exhaust holes in the fume hood table, as this will reduce the efficiency of the exhaust, which reduces safety</span> | |||
*<span style="color:red">Do not place your beakers too close to the fume hood sash, as this can make it difficult to efficiently extract the fumes escaping from the beakers, which reduces safety</span> | |||
''' | '''Perform development''' | ||
#Put on the appropriate personal protection gear | |||
#Pour rinsing agent into Rinse 1 and Rinse 2 beakers - typically DI water or IPA | |||
#Pour development solution into development beaker | |||
#Place exposed substrate in the appropriate carrier | |||
#Set timer | |||
#Submerge substrate into development beaker | |||
#Start timer immediately | |||
#When timer is 5 seconds from ending, prepare to lift the substrate out of the development beaker | |||
#Lift substrate out of development beaker - it can help to lift it at a slight angle, to allow liquids to drain more easily from large surfaces | |||
#Submerge it immediately into Rinse 1 | |||
#Agitate up/down for at least a few seconds | |||
#Move substrate into Rinse 2* | |||
#Agitate slightly | |||
#The developed substrate can now be removed and dried | |||
(<nowiki>*</nowiki>It is allowed to omit the Rinse 2 step) | |||
'''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach= | '''Clean up''' | ||
*Pour Rinse 1 and Rinse 2 into appropriate waste: water goes into the sink, IPA goes into C-waste drain | |||
*Rinse beakers with the DI-water gun | |||
*Pour development solution into appropriate waste: solvent based developer goes into C-waste drain. <span style="color:red">NB! TMAH is an aqueous alkaline solution, which must never be mixed with solvents! TMAH waste goes into the dedicated TMAH waste container, stored in the chemical cabinet in E-4.</span> | |||
*If your developer solution is not TMAH based: | |||
**Rinse beaker 3 times, discard water into sink | |||
*If your developer solution is TMAH based: | |||
**Rinse beaker once with DI-water and discard this into the TMAH waste | |||
**Rinse beaker two more times, discarding the water into the sink | |||
*Hang all beakers to dry on the drying rack | |||
*Erase the chemical label text | |||
*Wipe any droplets on the fume hood surface | |||
*Discard any napkins/other trash in the bin inside the fume hood | |||
<br clear="all" /> | |||
==Developer: SU8 (Wet Bench)== | |||
[[Image:SU8dev.JPG|400px|right|thumb|The Developer: SU8 (Wet Bench) is located in E-4.]] | |||
The SU8-Developer bench is a manually operated wet bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manually by the user. After development, the substrates are rinsed with IPA in dedicated IPA bath and put for drying in the empty bath. | |||
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=509 LabManager: Developer: SU8(Wet Bench)] - '''requires login''' | |||
===Process information=== | ===Process information=== | ||
Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying. | Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying. | ||
Development time is strongly dependent on the SU-8 thickness. | Development time is strongly dependent on the SU-8 thickness. | ||
*Minimum development time: 1 min per | *Minimum development time: 1 min per 20 µm in FIRST | ||
Suggestions: | Suggestions: | ||
*2-5µm: 2 min. in FIRST; 2 min. in FINAL | *2-5µm: 2 min. in FIRST; 2 min. in FINAL | ||
| Line 405: | Line 441: | ||
=== Equipment performance and process related parameters === | === Equipment performance and process related parameters === | ||
{| border=" | {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" | ||
!style="background:silver; color:black;" align="center" width="60"|Purpose | !style="background:silver; color:black;" align="center" width="60"|Purpose | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Development of | Development of: | ||
*SU-8 | *SU-8 | ||
|- | |- | ||
!style="background:silver; color:black;" align="center" width="60"|Developer | !style="background:silver; color:black;" align="center" width="60"|Developer | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
mr-Dev 600 | mr-Dev 600 | ||
| Line 423: | Line 458: | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method | ||
|style="background:LightGrey; color:black"|Development | |style="background:LightGrey; color:black"|Development | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Submersion | Submersion | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Handling | |style="background:LightGrey; color:black"|Handling | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Single wafer holder | Single wafer holder | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters | ||
|style="background:LightGrey; color:black"|Temperature | |style="background:LightGrey; color:black"|Temperature | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Room temperature | Room temperature | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Agitation | |style="background:LightGrey; color:black"|Agitation | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Magnetic stirrer | Magnetic stirrer | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Rinse | |style="background:LightGrey; color:black"|Rinse | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
IPA | IPA | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||
|style="background:LightGrey; color:black"|Substrate size | |style="background:LightGrey; color:black"|Substrate size | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
* 100 mm wafers | *100 mm wafers | ||
150 mm wafer | *150 mm wafers, check the liquid level in the baths | ||
*200 mm wafer, check the liquid level in the baths | |||
|- | |- | ||
| style="background:LightGrey; color:black"|Allowed materials | | style="background:LightGrey; color:black"|Allowed materials | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Silicon and glass substrates | *Silicon and glass substrates | ||
*Film, or pattern, of all materials except Type IV | |||
Film or pattern of all | |||
|- | |- | ||
|style="background:LightGrey; color:black"|Batch | |style="background:LightGrey; color:black"|Batch | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
1-6 | 1-6 | ||
|- | |- | ||
| Line 463: | Line 498: | ||
<br clear="all" /> | <br clear="all" /> | ||
==Developer: E-beam== | ==Developer: E-beam 02== | ||
[[Image:IMG 2464.JPG| | [[Image:IMG 2464.JPG|400px|right|thumb|Developer: E-beam 02 is located in E-4.]] | ||
Developer: E-beam 02 is a manually operated, single substrate puddle developer. It uses the ZED-N50 or AR 600-50 developers and IPA for rinsing. The substrates are loaded manually one by one into the developer. Developer dispense, puddle time, IPA rinse, and drying is then performed automatically by the equipment. | |||
'''[https://www.youtube.com/watch?v=btinNzYnLnY Training video]''' (for Developer: TMAH Manual, but it is the same model) | '''[https://www.youtube.com/watch?v=btinNzYnLnY Training video]''' (for Developer: TMAH Manual, but it is the same model) | ||
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=324 LabManager] - '''requires login''' | |||
===Process information=== | ===Process information=== | ||
All recipes use the following structure: | |||
#Pressurize the developer canister | |||
#Dispense puddle while rotating substrate slowly | |||
#Puddle development while not rotating | |||
#Agitate substrate once per 15 seconds by rotating slowly for 1 second | |||
#Spin off developer | |||
#Clean substrate with IPA | |||
#Dry substrate and chamber with nitrogen | |||
Multi-puddle recipes repeat steps 2-5 for the given number of puddles. | |||
''' | '''Process recipes'''<br> | ||
N50 recipes have the letter "N" in them. AR-600-50 recipes have the letter "A" in them. The number is the development time in seconds: | |||
* | *01 Rinse | ||
*02 N 15 | |||
*03 N 30 | |||
*04 N 60 | |||
*05 N 90 | |||
*06 N 120 | |||
*07 N 180 | |||
*08 N 300 | |||
*09 N 600 | |||
*10 N 2x60 | |||
*11 N 5x60 | |||
*12 A 15 | |||
*13 A 30 | |||
*14 A 60 | |||
*15 A 90 | |||
*16 A 120 | |||
*17 A 180 | |||
*18 A 300 | |||
*19 A 600 | |||
*20 A 2x60 | |||
*21 A 5x60 | |||
=== Equipment performance and process related parameters === | === Equipment performance and process related parameters === | ||
{| border=" | {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" | ||
|- | |- | ||
!style="background:silver; color:black;" align="center" width="60"|Purpose | !style="background:silver; color:black;" align="center" width="60"|Purpose | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Development of | Development of: | ||
*CSAR | *CSAR | ||
*ZEP520A | *ZEP520A | ||
|- | |- | ||
!style="background:silver; color:black; | !style="background:silver; color:black;" width="60"|Developer | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
*AR 600- | *AR 600-50 | ||
*N-50 | *ZED N-50 | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method | ||
|style="background:LightGrey; color:black"|Development | |style="background:LightGrey; color:black"|Development | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Puddle | |||
|- | |- | ||
|style="background:LightGrey; color:black"|Handling | |style="background:LightGrey; color:black"|Handling | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
*Chip chuck for chips | |||
*Non-vacuum chuck for 2" wafers | |||
*Non-vacuum chuck for 100 mm and 150 mm wafers | |||
*Non-vacuum chuck for 200 mm wafers | |||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters | ||
|style="background:LightGrey; color:black"|Temperature | |style="background:LightGrey; color:black"|Temperature | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Room temperature | Room temperature | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Agitation | |style="background:LightGrey; color:black"|Agitation | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
1 second rotational agitation at 30 rpm every 15 seconds | |||
|- | |- | ||
|style="background:LightGrey; color:black"|Rinse | |style="background:LightGrey; color:black"|Rinse | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
IPA | IPA | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||
|style="background:LightGrey; color:black"|Substrate size | |style="background:LightGrey; color:black"|Substrate size | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
* Chips | *Chips | ||
* | *2" wafers | ||
* 100 mm wafers | *100 mm wafers | ||
* 150 mm wafers | *150 mm wafers | ||
*200 mm wafers | |||
|- | |- | ||
| style="background:LightGrey; color:black"|Allowed materials | | style="background:LightGrey; color:black"|Allowed materials | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
All cleanroom approved materials | *All cleanroom approved materials | ||
*Film, or pattern, of all materials except Type IV | |||
Film or pattern of all | |||
|- | |- | ||
|style="background:LightGrey; color:black"|Batch | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
1 | 1 | ||
|- | |- | ||
| Line 571: | Line 610: | ||
<br clear="all" /> | <br clear="all" /> | ||
==Developer: TMAH Manual== | ==Developer: TMAH Manual 02== | ||
[[Image:IMG 2464.JPG| | [[Image:IMG 2464.JPG|400px|right|thumb|Developer: TMAH Manual 02 is located in E-4.]] | ||
Developer: TMAH Manual 02 is a manually operated, single substrate or chip puddle developer. It uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in water with a small amount of wetting agent). The substrates or chips are loaded manually one by one into the developer. Developer dispense, puddle time, water rinse, and drying is performed automatically by the equipment. | |||
'''[https://www.youtube.com/watch?v=btinNzYnLnY Training video]''' | |||
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=324 LabManager] - '''requires login''' | |||
===Process information=== | ===Process information=== | ||
All recipes use the following structure: | |||
#Pressurize the TMAH canister | |||
#Dispense puddle while rotating substrate slowly | |||
#Puddle development while not rotating | |||
#Agitate substrate once per 15 seconds by rotating slowly for 1 second | |||
#Spin off developer | |||
#Clean substrate and chamber with DI water | |||
#Dry substrate and chamber with nitrogen | |||
Multi-puddle recipes repeat steps 2-5 for the given number of puddles. | |||
'''Process recipes''' | '''Process recipes'''<br> | ||
SP: Single-puddle<br> | |||
MP: Multi-puddle | |||
*01 Rinse | |||
* | *02 SP 15 | ||
* | *03 SP 30 | ||
*04 SP 60 | |||
*05 SP 90 | |||
*06 SP 120 | |||
*07 SP 300 | |||
*08 MP 2x60 | |||
*09 MP 5x60 | |||
*91 SP test | |||
*92 MP test | |||
=== Equipment performance and process related parameters === | === Equipment performance and process related parameters === | ||
{| border=" | {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" | ||
!style="background:silver; color:black;" align="center" width="60"|Purpose | !style="background:silver; color:black;" align="center" width="60"|Purpose | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Development of | Development of UV resists: | ||
*AZ nLOF | *AZ nLOF | ||
*AZ MiR 701 | *AZ MiR 701 | ||
*AZ 5214E | *AZ 5214E | ||
*AZ 4562 | *AZ 4562 | ||
Development of DUV resists: | |||
*KRF M230Y | |||
*KRF M35G | |||
|- | |- | ||
!style="background:silver; color:black;" align="center" width="60"|Developer | !style="background:silver; color:black;" align="center" width="60"|Developer | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
AZ 726 MIF | AZ 726 MIF<br> | ||
(2.38% TMAH in water) | (2.38% TMAH in water) | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method | ||
|style="background:LightGrey; color:black"|Development | |style="background:LightGrey; color:black"|Development | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Puddle | |||
|- | |- | ||
|style="background:LightGrey; color:black"|Handling | |style="background:LightGrey; color:black"|Handling | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
*Chip chuck for chips and 2" wafers | |||
*Non-vacuum chuck for 100 mm and 150 mm wafers | |||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters | ||
|style="background:LightGrey; color:black"|Temperature | |style="background:LightGrey; color:black"|Temperature | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Room temperature | Room temperature | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Agitation | |style="background:LightGrey; color:black"|Agitation | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
1 second rotational agitation at 30 rpm every 15 seconds | |||
|- | |- | ||
|style="background:LightGrey; color:black"|Rinse | |style="background:LightGrey; color:black"|Rinse | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
DI water | DI water | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||
|style="background:LightGrey; color:black"|Substrate size | |style="background:LightGrey; color:black"|Substrate size | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
* Chips (6-60 mm) | *Chips (6-60 mm) | ||
* 100 mm wafers | *100 mm wafers | ||
* 150 mm wafers | *150 mm wafers | ||
|- | |- | ||
| style="background:LightGrey; color:black"|Allowed materials | | style="background:LightGrey; color:black"|Allowed materials | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
All cleanroom approved materials | *All cleanroom approved materials | ||
*Film, or pattern, of all materials except Type IV | |||
Film or pattern of all | |||
|- | |- | ||
|style="background:LightGrey; color:black"|Batch | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
1 | 1 | ||
|- | |- | ||
|} | |} | ||
<br clear="all" /> | <br clear="all" /> | ||
==Developer TMAH UV-lithography== | ==Developer TMAH UV-lithography== | ||
[[Image:SUSS DEV.JPG| | [[Image:SUSS DEV.JPG|400px|right|thumb|Developer: TMAH UV-lithography is located in E-4.]] | ||
Developer TMAH UV-lithography was released Q4 2014. | |||
Link to information about [[Specific_Process_Knowledge/Pattern_Design#Helpful_information_for_chip_layout|developer chuck size and hotplate pin positions]]. | |||
'''[https://www.youtube.com/watch?v=fs9DRH0Eo3k Training video]''' | '''[https://www.youtube.com/watch?v=fs9DRH0Eo3k Training video]''' | ||
[ | The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=329 LabManager] - '''requires login''' | ||
[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing#Standard Processes|Standard processes]] | ===[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing|Process Information]]=== | ||
*[[Specific Process Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing#General_Process_Information|General process information]] | |||
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography_processing#Process recommendations|Process recommendations]] | |||
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing#Standard Processes|Standard processes]] | |||
=== Equipment performance and process related parameters === | === Equipment performance and process related parameters === | ||
{| border=" | {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" | ||
!style="background:silver; color:black; | !style="background:silver; color:black;" width="60"|Purpose | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Development of | Development of | ||
*AZ nLOF | *AZ nLOF | ||
| Line 697: | Line 747: | ||
*DUV resists | *DUV resists | ||
|- | |- | ||
!style="background:silver; color:black; | !style="background:silver; color:black;" width="60"|Developer | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black" | | ||
AZ 726 MIF | AZ 726 MIF | ||
| Line 706: | Line 756: | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method | ||
|style="background:LightGrey; color:black"|Development | |style="background:LightGrey; color:black"|Development | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Puddle | Puddle | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Handling | |style="background:LightGrey; color:black"|Handling | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Vacuum chuck | Vacuum chuck | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters | ||
|style="background:LightGrey; color:black"|Temperature | |style="background:LightGrey; color:black"|Temperature | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Room temperature | Room temperature | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Agitation | |style="background:LightGrey; color:black"|Agitation | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Rotation | Rotation | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Rinse | |style="background:LightGrey; color:black"|Rinse | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
DI water | DI water | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||
|style="background:LightGrey; color:black"|Substrate size | |style="background:LightGrey; color:black"|Substrate size | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
* 100 mm wafers | * 100 mm wafers | ||
* 150 mm wafers | * 150 mm wafers | ||
|- | |- | ||
| style="background:LightGrey; color:black"|Allowed materials | | style="background:LightGrey; color:black"|Allowed materials | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
Silicon and glass substrates | Silicon and glass substrates | ||
| Line 739: | Line 789: | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Batch | |style="background:LightGrey; color:black"|Batch | ||
|style="background:WhiteSmoke; color:black | |style="background:WhiteSmoke; color:black"| | ||
1-25 | 1-25 | ||
|- | |- | ||
|} | |} | ||
<br clear="all" /> | |||
{{:Specific Process Knowledge/Lithography/Development/DUV_developer}} | |||