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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_PECVD  click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_PECVD  click here]'''<br>
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*[http://labmanager.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD4]<br>
*[http://labmanager.dtu.dk/d4Show.php?id=5093&mach=395 The QC procedure for PECVD4 - requires login]<br>
*[http://labmanager.dtu.dk/view_binary.php?fileId=4208 The newest QC data for PECVD4]
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=395 The newest QC data for PECVD4 - requires login]
{| {{table}}
{| {{table}}
| align="center" |  
| align="center" |  
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{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!QC limits
!PECVD3 - OXIDE
!PECVD4 - OXIDE
|-
|-
|Deposition rate
|Deposition rate
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|&plusmn; 2.1-2.7%<!-- Unif. [%] -->
|&plusmn; 2.1-2.7%<!-- Unif. [%] -->
|compressive 309 MPa <!-- Stress [MPa] -->
|compressive 309 MPa <!-- Stress [MPa] -->
|[[/LF_SiO2 results|more results]]<!-- Comments -->
|[[/LF_SiO2 results|Click for more results]]<!-- Comments -->
|12<!-- SiH4 [sccm] -->
|12<!-- SiH4 [sccm] -->
|1420<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
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|&plusmn; 0.3-0.5%<!-- Unif. [%] -->
|&plusmn; 0.3-0.5%<!-- Unif. [%] -->
|Compressive: 250.5 MPa<!-- Stress [MPa] -->
|Compressive: 250.5 MPa<!-- Stress [MPa] -->
|<!-- Comments -->
|[[/HF_SiO2 results|Click for more results]]<!-- Comments -->
|10<!-- SiH4 [sccm] -->
|10<!-- SiH4 [sccm] -->
|1420<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
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*[http://labmanager.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3]<br>
*[http://labmanager.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3 - requires login]<br>
*[http://labmanager.dtu.dk/view_binary.php?fileId=4015 The newest QC data for PECVD3]
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3 - requires login]
{| {{table}}
{| {{table}}
| align="center" |  
| align="center" |  
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|Uniformity [%]
|Uniformity [%]
|Stress
|Stress
|Comment
|-
|-
|LFSiO2
|LFSiO2
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|~1.5%
|~1.5%
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|We have seen that this recipe does not deposit the first minute
|-  
|-  
|LFSiO
|LFSiO
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|<1
|<1
|not measured
|not measured
|.
|-
|-
|1PBSG
|1PBSG
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|~17%
|~17%
|not measured
|not measured
|.
|}
|}
<br clear="all" />
<br clear="all" />
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|Description
|Description
|-  
|-  
|Core-Ge
|Core-Ge (not possible anymore as we have no Germanium)
|17
|17
|1600
|1600
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|~1.458  
|~1.458  
|}
|}


=Recipes on PECVD2 for deposition of silicon oxides <span style="color:Red">EXPIRED!!!</span>=
=Recipes on PECVD2 for deposition of silicon oxides <span style="color:Red">EXPIRED!!!</span>=
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*[http://labmanager.dtu.dk/d4Show.php?id=1988&mach=17 The QC procedure for PECVD2]<br>
 
*[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=17 The newest QC data for PECVD2]
{| {{table}}
{| {{table}}
| align="center" |  
| align="center" |  
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