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[[Category: Equipment |Thermal C3]]
 
[[Category: Thermal process|C3]]
[[index.php?title=Category:Equipment|Thermal C3]]
[[Category: Furnaces|C3]]
[[index.php?title=Category:Thermal process|C3]]
[[index.php?title=Category:Furnaces|C3]]


==Anneal-bond furnace (C3)==
==Anneal-bond furnace (C3)==
[[Image:C3.JPG|thumb|300x300px|Anneal-bond furnace (C3). Positioned in cleanroom B-1]]
[[Image:C3.JPG|thumb|300x300px|Anneal-bond furnace (C3). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]


The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. O<sub>2</sub>) is used as an oxidant for dry oxidation, and for wet oxidation water vapour is being generated by a bubbler.  
The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. O<sub>2</sub>) is used as an oxidant for dry oxidation, and for wet oxidation water vapour is being generated by a bubbler.  
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!style="background:silver; color:black" align="center"|Performance
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness and quality
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Dry oxide:~ 0 nm  to 300 nm (it takes too long to grow thicker dry oxide layers)
*Dry oxide:~ 0 nm  to 300 nm (it takes too long to grow thicker dry oxide layers)
*Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)
*Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)
* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/C3 furnace break-down voltage measurement results|Break-down voltage measurement results]]
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
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*Silicon wafers  
*Silicon wafers  
*Silicon wafers with layers of silicon oxide or silicon nitride  
*Silicon wafers with layers of silicon oxide or silicon nitride  
*Wafers from the LPCVD furnaces
*Wafers from the A1, A3, B-stack, C1 and E1 stack furnaces
*Wafers from PECVD4
*Wafers and samples from PECVD4
*Wafers from PECVD3 (without any metal)
*Wafers and samples from PECVD3 (without any metals)
*Wafers from Wafer Bonder 02 (assuming they were clean and not have been exposed to any metal when entering the Wafer Bonder 02)
*Wafers from Wafer Bonder 02
*Wafers from Wafer Bonder 03 (without any metals). Use new or dedicated/clean teflon sheets in the wafer bonder
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Latest revision as of 13:28, 22 October 2025

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

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Thermal C3 C3 C3

Anneal-bond furnace (C3)

Anneal-bond furnace (C3). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal

The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. O2) is used as an oxidant for dry oxidation, and for wet oxidation water vapour is being generated by a bubbler.

This furnace is the third tube in the furnace C-stack positioned in cleanroom B-1.

In this furnace it is allowed oxidize and anneal new wafers without doing an RCA clean first. Also silicon wafers from PECVD4 and wafers without any metal coming from PECVD3 and bonded wafers comming directly from the Wafer Bonder 02 (assuming they were clean and not have been exposed to any metal when entering wafer bonder) can be processed in the furnace without an RCA cleaning. Check the cross contamination information in LabManager before you use the furnace.


The user manual, technical information and contact information can be found in LabManager:

Anneal-bond Furnace (C3)


Process knowledge


Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters

Purpose
  • Oxidation of Si wafers
  • Annealing of processed wafers, eg. bonded wafers from EVG NIL

Annealing:

  • Using N2

Oxidation:

  • Dry oxidation using O2
  • Wet oxidation using H2O vapour generated by a bubbler
Performance Film thickness and quality
Process parameter range Process temperature
  • 800-1150 oC
Process pressure
  • 1 atm (no vacuum)
Gas flows
  • N2: 0-10 slm
  • O2: 0-10 slm
Substrates Batch size
  • 1-30 100 mm wafers (or 50 mm wafers)
Substrate materials allowed
  • Silicon wafers
  • Silicon wafers with layers of silicon oxide or silicon nitride
  • Wafers from the A1, A3, B-stack, C1 and E1 stack furnaces
  • Wafers and samples from PECVD4
  • Wafers and samples from PECVD3 (without any metals)
  • Wafers from Wafer Bonder 02
  • Wafers from Wafer Bonder 03 (without any metals). Use new or dedicated/clean teflon sheets in the wafer bonder
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