Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@Nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.Nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch) click here]''' | '''Feedback to this page''': '''[mailto:labadviser@Nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.Nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch) click here]''' | ||
[[Category: Equipment |Etch ASE]] | [[Category: Equipment |Etch ASE]] | ||
[[Category: Etch (Dry) Equipment|ASE]] | [[Category: Etch (Dry) Equipment|ASE]] | ||
<!--Checked for updates on 28/6-2023 - ok/jmli --> | |||
= The ASE = | = The ASE = | ||
[[image:ASE.jpg|300x300px|right|thumb|STS ASE - positioned in cleanroom B-1]] | [[image:ASE.jpg|300x300px|right|thumb|STS ASE - positioned in cleanroom B-1. {{photo1}} ]] | ||
Name: M/PLEX ICP - ASE (Advanced Silicon Etcher) <br> | Name: M/PLEX ICP - ASE (Advanced Silicon Etcher) <br> | ||
Vendor: STS (now SPTS) <br> | Vendor: STS (now SPTS) <br> | ||
The ASE was the first ICP (Inductively coupled plasma) tool at DTU Nanolab. It was manufactured by STS and is called the ASE (Advanced Silicon Etcher). Originally the main purpose of the ASE was etching of silicon using the Bosch process. However, after the acquisition of the [[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus]] and the retirement of our old RIE's the ASE will only serve as a "dirty" plasma etcher, etching silicon, Silicon oxide and silicon nitride on wafers with small amount of metals exposed and as a polymer etcher. The rule is that samples with up to 4 cm2 of metal on the surface will be allowed to process. Extra gasses was been added to the machine | The ASE was the first ICP (Inductively coupled plasma) tool at DTU Nanolab. It was manufactured by STS and is called the ASE (Advanced Silicon Etcher). Originally the main purpose of the ASE was etching of silicon using the Bosch process. However, after the acquisition of the [[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus]] and the retirement of our old RIE's the ASE will only serve as a "dirty" plasma etcher, etching silicon, Silicon oxide and silicon nitride on wafers with small amount of metals exposed and as a polymer etcher. The rule is that samples with up to 4 cm2 of metal on the surface will be allowed to process. Extra gasses was been added to the machine to allow SiO2 and SiN etching. Using these gasses may affect the conditioning of the chamber and thereby the stability of processes. Any clean processes and sensitive processes should take place in to the DRIEs or elsewhere. | ||
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*[[Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE|Etch of Silicon using ASE]] | *[[Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE|Etch of Silicon using ASE]] | ||
*[[Specific Process Knowledge/Etch/Etching of Polymer/Polymer Etch by ASE|Etch of polymers using ASE]] | *[[Specific Process Knowledge/Etch/Etching of Polymer/Polymer Etch by ASE|Etch of polymers using ASE]] | ||
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE|Etch of SiO2 using ASE]] | *[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE|Etch of SiO2/SiN using ASE]] | ||
==An overview of the performance of the ASE and some process related parameters== | ==An overview of the performance of the ASE and some process related parameters== | ||