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'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Descum click here]'''
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==Descum results==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Descum click here]'''


===Plasma asher 1 ===
[[Category: Equipment|Lithography descum]]
[[Category: Lithography|Descum]]


[[image:Descum Results aug 2019.png|400x400px|thumb| Descum results plasma asher 1]]
__TOC__


 
= Descum Comparison Table =
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
{| class="wikitable"
 
|-
Note: Plasma asher was cold before use
!
 
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
{| {{table}}
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher 4|Plasma Asher 4 (Clean)]]
| align="center" |  
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|-
! colspan="4" | Settings
! scope=row style="text-align: left;" |  Purpose
! colspan="6" | Etched Thickness (nm)
| Resist descum
|
*Resist stripping
*Resist descum
|
*Resist stripping
*Resist descum
|-
! scope=row style="text-align: left;" | Method
| Plasma ashing
| Plasma ashing
| Plasma ashing
|-
|-
| colspan="4" |
! scope=row style="text-align: left;" | Process gasses
! colspan="6" | ashing time (min)
| O<sub>2</sub> (50 sccm)
|- style="background:LightGrey"
|
|| Recipe || O2 flow || N2 flow || Power
*O<sub>2</sub> (0-500 sccm)
| 1 || 2 || 5 || 7 || 10 || 10
*N<sub>2</sub> (0-500 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*CF<sub>4</sub> (0-200 sccm)
|-
|-
| 1 || 70 || 70 || 150 || 14,2 || 16,3 || 47,6 || 123,2 || 854,3 || 862,1
! scope=row style="text-align: left;" | Process power
| 10-100 W (10-100%)
| 150-1000 W
| 150-1000 W
|-
|-
| 2 || 500 || 0 || 200 ||  || 8,1 || 32,9 || 271,1 || 495,6 || 446,2
! scope=row style="text-align: left;" | Substrate batch
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|-
|-
! scope=row style="text-align: left;" | Substrate materials
|
*<span style="color:red">'''No polymer substrates'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
|}
<br clear="all" />
 
Conny Hjort & Jesper Hanberg
September 2019


{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher03}}


{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher04}}


<br clear="all" />
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher05}}


===Plasma asher 2 ===
=Decommisioned tools=
[[image:descum_graf.jpg|400x400px|thumb|Descum results plasma asher 2]]
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


Descum of AZ  Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]


Experiment parameters:
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
|O2 flow|| N2 flow || Power
|-
| 100 || 100 || 150
|-
|}
|}


<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>


{| {{table}}
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
| align="center" |
<br clear="all" />
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20
|-
|'''Etched Thickness (nm)'''|| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 59,4 || 140,1 || 360,7
|-
|'''Initial temperature (°C)'''|| 28 || 21 || 31 || 21 || 22 || 28 || 25 || 24 || 21 || 24 || 24 || 22 || 22
|-
|}
|}
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