Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=/... click here]'''
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<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
 
== Studies of Cr deposition processes ==
 
[[/Deposition of Chromium|Uniformity of Cr layers]] - ''Uniformity of Cr layers deposited with different methods and settings''
 
[[/Sputtering of Cr in Wordentec|Sputtering of Cr in Wordentec]] - ''Settings and deposition rates''
 
[[/Sputtering of Cr in Sputter System (Lesker)|Sputtering of Cr in Sputter system (Lesker)]] - ''Settings and deposition rates''
 
[[/Sputtering of Cr in Cluster Lesker PC1|Sputtering of Cr in Sputter-system Metal-Oxide (PC1)]] - ''Settings and deposition rates''
 
[[/Sputtering of Cr in Cluster Lesker PC3|Sputtering of Cr in Sputter-system Metal-Nitride (PC3)]] - ''Settings and deposition rates''
 
[[/Thermal evaporation of Cr in Thermal evaporator|Thermal evaporation of Cr in Thermal evaporator]] - ''Settings and deposition results''
 
[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cr:_High_tensile_stress|Stress in sputtered Cr films]] - ''Extremely high tensile stress in Cr films deposited at high temperature''
 


== Chromium deposition ==
== Chromium deposition ==
Chromium can be deposited by e-beam evaporation and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.
Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.  
 
{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
   
   
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation and sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]])
! Sputter deposition ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|(Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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|E-beam deposition of Chromium
|E-beam deposition of Chromium
|E-beam and sputter deposition of Chromium
|E-beam and sputter deposition of Chromium
|E-beam deposition of Chromium
|Thermal deposition of Chromium
|Sputter deposition of Chromium
|Sputter deposition of Chromium
|Sputter deposition of Chromium
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion bombardment
|Ar ion gun (only in E-beam evaporator Temescal)
|RF Ar clean
|RF Ar clean
|
|
|RF Ar clean
|RF Ar clean
|RF Ar clean
|-
|-
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|10Å to 1µm*
|10Å to 1µm*
|10Å to 1µm*
|10Å to 1µm*
|10Å to 1000 Å
|80 nm
|at least up to 200 nm
|at least up to 200 nm
|at least up to 200 nm
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|0.5Å/s to 10Å/s
|1 Å/s to 10 Å/s
|10Å/s to 15Å/s (e-beam)
|1 Å/s to 10 Å/s (e-beam)
Sputtering: Depends on process parameters. See [[Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Sputtering of Cr in Wordentec|here]] and process log.
Sputtering: Depends on process parameters. See [[Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Sputtering of Cr in Wordentec|here]] and process log.
|10Å/s
|1 Å/s
|Depends on process parameters. See process log.
|Depends on [[/Sputtering of Cr in Sputter System (Lesker)|process parameters]]. At least up to 1.48 Å/s. See process log.
|Depends on process parameters.  
|-
|-


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*6x6" wafers
*6x6" wafers
|
|
*1x 2" wafer or
*4x 2" wafer or
*1x 4" wafers or
*1x 4" wafers or
*1x6" wafer or
*Several smaller pieces  
*Several smaller pieces  
*In theory up to 8" wafer (or 2x4" wafer) but uniformity will be bad
|
|
*1x6" wafers
*1x6" wafers
*Smaller pieces/wafers
*Smaller pieces/wafers
|
*up to 10x4" wafers or
*up to 10x6" wafers or
* many smaller samples
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Allowed substrates
! Allowed materials
|  
|  
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
* Quartz wafers
 
* Pyrex wafers
|
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
|
|
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet].
* Quartz wafers
 
* Pyrex wafers
|
|
* III-V materials
* Silicon wafers  
* Silicon wafers  
* Quartz wafers
* and almost any
* Pyrex wafers
|
|
* Silicon wafers
*Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* and almost any other
* Special carrier for III-V materials.
 
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Allowed materials
|
* Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
* Silicon
* Silicon oxide
* Silicon nitride
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
|
* almost any
|-
|-style="background:LightGrey;  color:black"
! Comment
! Comment
| Takes approx. 20 min to pump down
| Takes approx. 1 hour to pump down
| Takes approx. 20 min to pump down
|
|
|
| Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber
|
|


|-
|-


|}  
|}  
'''*''' ''For thicknesses above 600 nm, request permission from metal@danchip.dtu.dk to ensure there is enough material.''
'''*''' ''For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material.''
 
== Studies of Cr deposition processes ==
 
[[/Deposition of Chromium|Uniformity of Cr layers]] - ''Uniformity of Cr layers deposited with different methods and settings''
 
[[/Sputtering of Cr in Wordentec|Sputtering of Cr in Wordentec]]- ''Settings and deposition rates''

Latest revision as of 14:26, 19 January 2024

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal

Studies of Cr deposition processes

Uniformity of Cr layers - Uniformity of Cr layers deposited with different methods and settings

Sputtering of Cr in Wordentec - Settings and deposition rates

Sputtering of Cr in Sputter system (Lesker) - Settings and deposition rates

Sputtering of Cr in Sputter-system Metal-Oxide (PC1) - Settings and deposition rates

Sputtering of Cr in Sputter-system Metal-Nitride (PC3) - Settings and deposition rates

Thermal evaporation of Cr in Thermal evaporator - Settings and deposition results

Stress in sputtered Cr films - Extremely high tensile stress in Cr films deposited at high temperature


Chromium deposition

Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.

E-beam evaporation E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) E-beam evaporation and sputter deposition (Wordentec) Thermal evaporation (Thermal evaporator) Sputter deposition (Lesker sputterer) Sputter deposition ((Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) )
General description E-beam deposition of Chromium E-beam and sputter deposition of Chromium Thermal deposition of Chromium Sputter deposition of Chromium Sputter deposition of Chromium
Pre-clean Ar ion gun (only in E-beam evaporator Temescal) RF Ar clean RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm* 10Å to 1µm* 80 nm at least up to 200 nm at least up to 200 nm
Deposition rate 1 Å/s to 10 Å/s 1 Å/s to 10 Å/s (e-beam)

Sputtering: Depends on process parameters. See here and process log.

1 Å/s Depends on process parameters. At least up to 1.48 Å/s. See process log. Depends on process parameters.
Batch size
  • 4x6" wafers or
  • 3x8" wafers (ask for holder)
  • Many smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 4x 2" wafer or
  • 1x 4" wafers or
  • 1x6" wafer or
  • Several smaller pieces
  • In theory up to 8" wafer (or 2x4" wafer) but uniformity will be bad
  • 1x6" wafers
  • Smaller pieces/wafers
  • up to 10x4" wafers or
  • up to 10x6" wafers or
  • many smaller samples
Allowed materials

Almost any that does not degas. See the cross-contamination sheet.

Almost any that does not degas. See the cross-contamination sheet.

Almost any that does not degas. See the cross-contamination sheet.

  • Silicon wafers
  • and almost any
  • Almost that does not degas - see cross contamination sheets for PC1 and PC3
  • Special carrier for III-V materials.
Comment Takes approx. 20 min to pump down Takes approx. 1 hour to pump down Takes approx. 20 min to pump down Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber

* For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material.