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== Chromium deposition ==
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
Chromium can be deposited by e-beam evaporation and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.
 
== Studies of Cr deposition processes ==
 
[[/Roughness of Chromium|Roughness of Chromium]] - ''Roughness and Uniformity of Cr layers deposited with different methods and settings''
 
[[/Sputtering of Cr in Sputter System (Lesker)|Sputtering of Cr in Sputter system (Lesker)]] - ''Settings and deposition rates''
 
[[/Sputtering of Cr in Cluster Lesker PC1|Sputtering of Cr in Sputter-system Metal-Oxide (PC1)]] - ''Settings and deposition rates''
 
[[/Sputtering of Cr in Cluster Lesker PC3|Sputtering of Cr in Sputter-system Metal-Nitride (PC3)]] - ''Settings and deposition rates''


[[Image:section under construction.jpg|70px]]
[[/Thermal evaporation of Cr in Thermal evaporator|Thermal evaporation of Cr in Thermal evaporator]] - ''Settings and deposition results''


[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cr:_High_tensile_stress|Stress in sputtered Cr films]] - ''Extremely high tensile stress in Cr films deposited at high temperature''


== Chromium deposition ==
Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.
{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
   
   
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]])
! Sputter deposition ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|(Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
|E-beam deposition of Chromium
|E-beam deposition of Chromium
|E-beam and sputter deposition of Chromium
|Thermal deposition of Chromium
|E-beam deposition of Chromium
|Sputter deposition of Chromium
|Sputter deposition of Chromium
|Sputter deposition of Chromium
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion bombardment
|Ar ion gun (only in E-beam evaporator Temescal)
|RF Ar clean
|
|
|
|RF Ar clean
|RF Ar clean
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to 1µm*
|10Å to 300 nm*
|10Å to 1µm*
|100 nm
|10Å to 1000 Å
|at least up to 200 nm
|at least up to 200 nm
|at least up to 200 nm
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|0.5Å/s to 10Å/s
|1 Å/s to 10 Å/s
|10Å/s to 15Å/s (e-beam)
|1 Å/s
Sputtering: Depends on process parameters. See process log.
|Depends on [[/Sputtering of Cr in Sputter System (Lesker)|process parameters]]. At least up to 1.48 Å/s. See process log.
|10Å/s
|Depends on process parameters.  
|Depends on process parameters. See process log.
|-
|-


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*3x8" wafers (ask for holder)
*3x8" wafers (ask for holder)
*Many smaller pieces
*Many smaller pieces
|
|
*24x2" wafers or  
*Up to *3x 4" wafers or
*6x4" wafers or
*1x6" or 1x 8" wafer
*6x6" wafers
*Many smaller samples
|
*1x 2" wafer or
*1x 4" wafers or
*Several smaller pieces
|
|
*1x6" wafers
*1x6" wafers
*Smaller pieces/wafers
*Smaller pieces/wafers
|
*up to 10x4" wafers or
*up to 10x6" wafers or
* many smaller samples
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Allowed substrates
! Allowed materials
|  
|  
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers
|
|
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet].
* Quartz wafers
 
* Pyrex wafers
|
|
* III-V materials
* Silicon wafers  
* Silicon wafers  
* Quartz wafers
* and almost any
* Pyrex wafers
|
|
* Silicon wafers
*Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* and almost any other
* Special carrier for III-V materials.
 
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Allowed materials
|
* Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the cross-contamination sheet
|
* Silicon
* Silicon oxide
* Silicon nitride
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
|
* almost any
|-
|-style="background:LightGrey;  color:black"
! Comment
! Comment
| Takes approx. 20 min to pump down
| Takes approx. 20 min to pump down
|
|
|
| Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber
|
|


|-
|-


|}  
|}  
'''*''' ''For thicknesses above 600 nm, request permission from metal@danchip.dtu.dk to ensure there is enough material.''
'''*''' ''For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material and to prioritize chamber cleaning as Cr tends to be a high-stress layer and thus causes flaking,''
 
== Studies of Cr deposition processes ==
 
[[/Deposition of Chromium|Uniformity of Cr layers]] - ''Uniformity of Cr layers deposited with different methods and settings''
 
[[/Sputtering of Cr in Wordentec|Sputtering of Cr in Wordentec]]- ''Settings and deposition rates''

Latest revision as of 10:46, 23 June 2025

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal

Studies of Cr deposition processes

Roughness of Chromium - Roughness and Uniformity of Cr layers deposited with different methods and settings

Sputtering of Cr in Sputter system (Lesker) - Settings and deposition rates

Sputtering of Cr in Sputter-system Metal-Oxide (PC1) - Settings and deposition rates

Sputtering of Cr in Sputter-system Metal-Nitride (PC3) - Settings and deposition rates

Thermal evaporation of Cr in Thermal evaporator - Settings and deposition results

Stress in sputtered Cr films - Extremely high tensile stress in Cr films deposited at high temperature

Chromium deposition

Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.

E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) Thermal evaporation (Thermal evaporator) Sputter deposition (Lesker sputterer) Sputter deposition ((Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) )
General description E-beam deposition of Chromium Thermal deposition of Chromium Sputter deposition of Chromium Sputter deposition of Chromium
Pre-clean Ar ion gun (only in E-beam evaporator Temescal) RF Ar clean
Layer thickness 10Å to 300 nm* 100 nm at least up to 200 nm at least up to 200 nm
Deposition rate 1 Å/s to 10 Å/s 1 Å/s Depends on process parameters. At least up to 1.48 Å/s. See process log. Depends on process parameters.
Batch size
  • 4x6" wafers or
  • 3x8" wafers (ask for holder)
  • Many smaller pieces
  • Up to *3x 4" wafers or
  • 1x6" or 1x 8" wafer
  • Many smaller samples
  • 1x6" wafers
  • Smaller pieces/wafers
  • up to 10x4" wafers or
  • up to 10x6" wafers or
  • many smaller samples
Allowed materials

Almost any that does not degas. See the cross-contamination sheet.

Almost any that does not degas. See the cross-contamination sheet.

  • Silicon wafers
  • and almost any
  • Almost that does not degas - see cross contamination sheets for PC1 and PC3
  • Special carrier for III-V materials.
Comment Takes approx. 20 min to pump down Takes approx. 20 min to pump down Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber

* For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material and to prioritize chamber cleaning as Cr tends to be a high-stress layer and thus causes flaking,

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