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====Procces flow description====
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/LabAdviser/Technology_Research/Fabrication_of_Hyperbolic_Metamaterials_using_Atomic_Layer_Deposition/AZO_pillars click here]'''


<i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br>
All images and photos on this page belongs to <b>DTU Nanolab</b> and <b>DTU Electro</b> (previous DTU Fotonik).<br></i>
=Fabrication of Hyperbolic Metamaterials by ALD: AZO Pillars=
The fabrication and characterization described below were conducted in <b>2013-2016 by Evgeniy Shkondin, DTU Nanolab</b>.<br>
== Procces flow description ==
Double side polished (DSP), 150 mm (100) Si wafers were selected for device fabrication. They were RCA cleaned and later oxidized in a conventional quartz tube (furnace from Tempress) using a dry oxidation process based on O<sub>2</sub> at 1100 °C, resulting in a 200 nm SiO<sub>2</sub> layer on Si. Next, a 2 μm amorphous Si layer was deposited on the SiO<sub>2</sub> surface using a conventional low-pressure chemical vapor deposition (LPCVD) process (furnace from
Double side polished (DSP), 150 mm (100) Si wafers were selected for device fabrication. They were RCA cleaned and later oxidized in a conventional quartz tube (furnace from Tempress) using a dry oxidation process based on O<sub>2</sub> at 1100 °C, resulting in a 200 nm SiO<sub>2</sub> layer on Si. Next, a 2 μm amorphous Si layer was deposited on the SiO<sub>2</sub> surface using a conventional low-pressure chemical vapor deposition (LPCVD) process (furnace from
Tempress) based on SiH<sub>4</sub> at 560 °C. This procedure enables the preparation of home-made silicon-on-insulator (SOI) substrates.
Tempress) based on SiH<sub>4</sub> at 560 °C. This procedure enables the preparation of home-made silicon-on-insulator (SOI) substrates.
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<gallery caption="" widths="500px" heights="600px" perrow="2">
<gallery caption="" widths="500px" heights="600px" perrow="2">
image:Fabrication_shematic_AZO_pillars_eves2.jpg|Figure 1. Schematics of the fabrication flow. a) Home-made SOI substrates. b) Deep-UV lithography. Resist spin coating, baking, exposure and developing. c) DRIE etching, fabrication of initial Si template. d) ALD deposition of D25 AZO at 250 °C. Partial deposition will lead to fabrication of tubes, while complete filling will create full pillars. e) Removal of the top AZO layer by Ar+ sputtering. f) Silicon host removal using conventional RIE process.
image:Fabrication_shematic_AZO_pillars_eves2.jpg|Figure 1. Schematics of the fabrication flow. a) Home-made SOI substrates. b) Deep-UV lithography. Resist spin coating, baking, exposure and developing. c) DRIE etching, fabrication of initial Si template. d) ALD deposition of D25 AZO at 250 °C. Partial deposition will lead to fabrication of tubes, while complete filling will create full pillars. e) Removal of the top AZO layer by Ar+ sputtering. f) Silicon host removal using conventional RIE process.
image:AZO_structures_fab_supplementary_eves.jpg|Figure 2. SEM images, bird-eye-view. a) AZO pillars and b) AZO tubes.
image:AZO_structures_fab_supplementary_eves.jpg|Figure 2. SEM images, bird-eye-view. a) AZO pillars, and b) AZO tubes.
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<gallery caption="" widths="500px" heights="600px" perrow="2">
<gallery caption="" widths="500px" heights="600px" perrow="2">
image:AZO_pillars_fab_supplementary_eves.jpg| Figure 3. SEM verification for each fabrication step of pillars production. Left side shows cross-sectional images and right side of the Figure shows the top view of the structures.
image:AZO_pillars_fab_supplementary_eves.jpg| Figure 3. SEM verification for each fabrication step of pillars production. Substrate is normal Si-wafer. Left side shows cross-sectional images and right side of the Figure shows the top view of the structures.
image:AZO_tubes_fab_supplementary_eves.jpg| Figure 4. SEM verfication for each fabrication step of tube production. Left side shows cross-sectional images and right side of the Figure shows the top view of the structures.
image:AZO_tubes_fab_supplementary_eves.jpg| Figure 4. SEM verfication for each fabrication step of tube production. Substrate is silicon-on-isolator (SOI). Left side shows cross-sectional images and right side of the Figure shows the top view of the structures.
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!1.3
!1.3
|LPCVD deposition of Si. (Optional step. Needs only if SOI substrates requires)
|LPCVD deposition of Si. (Optional step. Needs only if SOI substrates requires)
|LPCVD of amorphous silicon using [[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_polysilicon/Deposition_of_polysilicon_using_LPCVD/Standard_recipes,_QC_limits_and_results_for_the_6"_polysilicon_furnace|AMORPOLY]] recipe in 6" Furnace LPCVD PolySilicon.
|LPCVD of amorphous silicon using [[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Standard recipes, QC limits and results for the 6" polysilicon furnace|AMORPOLY]] recipe in 6" Furnace LPCVD PolySilicon.
|[[Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon| 6" Furnace LPCVD PolySilicon]].
|[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon| 6" Furnace LPCVD PolySilicon]].
|[[image:3_1_SOI.jpg|250x350px|center|]]
|[[image:3_1_SOI.jpg|250x350px|center|]]
|-
|-
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|-
|-
!1.3000000000000000000000000000
!1.5
|Deep reactive ion etching (DRIE).
|Deep reactive ion etching (DRIE).
|DRIE; [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/DUVetch|Recipe: PolySOI10]] Recipe needs to be tuned. Adjusted parameters: temperature, etching and passivation times.
|DRIE; [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/DUVetch|Recipe: PolySOI10]] Recipe needs to be tuned. Adjusted parameters: temperature, etching and passivation times.
| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus|DRIE Pegasus]].
| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus|DRIE Pegasus]].
|[[image:00_zero (3)_nanogratings.JPG|250x350px|center|]]
|[[image:5_2_DRIE.jpg|250x350px|center|]]
|-
|-


|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!1.4000000000000000000000000000000
!1.6
|Plasma surface treatment.
|Plasma surface treatment.
|To ensure that remainings of DUV resist are gone, samples are treated by O<sub>2</sub>/N<sub>2</sub> plasma. (Optional step)
|To ensure that remainings of DUV resist are gone, samples are treated by O<sub>2</sub>/N<sub>2</sub> plasma. (Optional step)
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|-
|-
!1.50000000000000000000000000000000
!1.7
|Scanning Electron Microscopy inspection.  
|Scanning Electron Microscopy inspection.  
|By cleaving the sample it is possible to inspect DRIE etched Si trenches in cross-sectional mode.
|By cleaving the sample it is possible to inspect DRIE etched Si holes in cross-sectional mode.
|
|
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]  
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]  
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[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|[[image:Si_trench007.jpg|250x350px|center]]
|See Figures 3a and 4a above.
|-
|-


|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!1.60000000000000000000000000000000000
!1.8
|Atomic Layer Deposition of Al-doped ZnO (AZO).
|Atomic Layer Deposition of Al-doped ZnO (AZO).
|Deposition carried at 200<sup>o</sup>C. Thickness is above 100 nm.
|Deposition carried at 250<sup>o</sup>C. For compleate pillars the thickness needs to above 100 nm. For AZO tubes only 20 nm (partial deposition) requires.
||Equipment used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]]. Standard recipe used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/AZO_deposition_using_ALD| AZO 20T]].
||Equipment used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]]. Standard recipe used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/AZO_deposition_using_ALD| AZO 25T]].
|[[image:02_ALD_eves.jpg|250x350px|center]]
|[[image:6_3_ALD_full pillars.jpg|250x350px|center]]
|-
|-


|-
|-
!1.700000000000000000000000000
!1.9
|Scanning Electron Microscopy inspection.
|Scanning Electron Microscopy inspection.
|By cleaving the sample it is possible to inspect ALD coatings deposited on Si trenches in cross-sectional mode.
|By cleaving the sample it is possible to inspect ALD coatings deposited in Si holes in cross-sectional mode.
|
|
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]  
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]  
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[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|[[image:03_ALD_eves_AZO.jpg|250x350px|center]]
|See figures 3b and 4b above.
|-
|-


|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!1.800000000000000000000000000000
!1.10
|Ion Beam Etching (IBE).
|Ion Beam Etching (IBE).
|Opening of deposited AZO top layer using recipe [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch|"Ti acceptance"]] there the stage was placed to 0<sup>o</sup> degree. The back side of the wafer also needs to be exposed to etching.
|Opening of deposited AZO top layer using recipe [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch|"Ti acceptance"]] there the stage was placed to 0<sup>o</sup> degree. The back side of the wafer also needs to be exposed to etching.
|[[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300|IBE/IBSD Ionfab 300]]
|[[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300|IBE/IBSD Ionfab 300]]
|[[image:04_ALD_eves.jpg|250x350px|center]]
|[[image:7_ALD_fill pillars_Ar.jpg|250x350px|center]]
|-
|-


|-
|-
!1.900000000000000000000000000000
!1.11
|Scanning Electron Microscopy inspection.
|Scanning Electron Microscopy inspection.
|By cleaving the sample it is possible to inspect IBE etching results in cross-sectional mode.
|By cleaving the sample it is possible to inspect IBE etching results in cross-sectional mode.
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[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|[[image:05_ALD_eves_ICP.jpg|250x350px|center]]
|See Figures 3c and 4c above.
|-
|-


|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!1.10000000000000000000000000000000
!1.12
|Selective etch of Si between ALD AZO coatings.
|Selective etch of Si between ALD AZO coatings.
|Si etching proceeds using reactive ion etching with isotropic process based on SF<sub>6</sub> process gas.
|Si etching proceeds using reactive ion etching with isotropic process based on SF<sub>6</sub> process gas.
||Equipment used: [[Specific_Process_Knowledge/Etch/RIE_(Reactive_Ion_Etch)|RIE2]].
||Equipment used: [[Specific_Process_Knowledge/Etch/RIE_(Reactive_Ion_Etch)|RIE2]].
|[[image:06_ALD_eves.jpg|250x350px|center]]
|[[image:8_final pillars.jpg|250x350px|center]]
|-
|-


|-
|-
!1.110000000000000000000000000
!1.13
|Scanning Electron Microscopy inspection of fabricated structure.
|Scanning Electron Microscopy inspection of fabricated structures.
|Proof of final result.
|Proof of final result.
|
|
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[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|[[image:07_ALD_eves_RIE_SF6.jpg|250x350px|center]]
|See Figures 2, 3d and 4d above.  
|-
|-


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