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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Pattern_Design click here]'''
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= Pattern Design =


=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
For making a pattern on a substrate it is necessary to use a software tool to design the pattern layout. This counts for all kind of lithography and laser cutting. There are a number of different software tools that can be used, some of the more commonly used are:
 
= Pattern Design and Mask Fabrication =
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Pattern_Design_and_Mask_Fabrication click here]'''
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== Pattern Design ==
 
For making a pattern on a substrate it is necescary to use a software tool to design the pattern layout. This counts for all kind of lithography and laser cutting. There are a number of differernt software tools that can be used, some of the more commonly used are:
   
   
* CleWin
* CleWin
* KLayout (free) link: https://www.klayout.de/
* L-Edit
* L-Edit
* Autocad
* Autocad


At Danchip we offer all users '''free access to CleWin 5''' for their mask layout. We have at least 50 floating licenses for concurrent usage.
At Nanolab we offer all users '''free access to CleWin 6''' for their mask layout. You can find more information on how to install CleWin 6 on your local computer [[Specific Process Knowledge/Pattern Design/CleWin|'''here''']].
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== Layout file format==
There are different file formats available and not all equipment can handle each of them. 
* For '''UV-lithography''', you create a layout file with your design. The file format should preferably be CIF or GDS, though DXF, or GERBER is acceptable too. The electronic mask layout can be used directly in one of our [[Specific Process Knowledge/Lithography/UVExposure|Mask Less Aligners (MLAs)]] or you can have a physical mask produced based on the layout file for our [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|Mask Aligner]]. For more details see below [[Specific_Process_Knowledge/Pattern_Design#Mask_Ordering_and_Fabrication|Mask Fabrication for UV-lithography]].
* For '''DUV-lithography''', a physical mask, called "reticles", is required. The file format must be GDS. For more details concerning the design of reticles see [[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Reticle_Design|Reticle Design]].
* For '''E-beam lithography''', you need to prepare a set of files (GDS, V30, sdf, jdf and mgn files). For more details, please see [[Specific_Process_Knowledge/Lithography/EBeamLithography/FilePreparation#FilePreparation|File preparation]]. For details about how to make aligned E-beam patterns, please have at look at [[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#Design_of_global_marks_and_chip_marks|Design of global marks and chip marks]]
* For '''Laser Cutting''' using our [Specific Process Knowledge/Back-end processing/Laser Micromachining Tool|Laser Micromachining Tool], the layout file must be saved as DXF file.
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There are two ways to use the software:
== Mask Design for UV-lithography ==
* [[/CleWin#CleWin 5 - without installation|'''Without installation.''']] You log on to a terminal server where the software is already installed and you use it right away. [[/CleWin#CleWin 5 - without installation|Click here for guidelines.]]
Here you can find tips and tricks for mask designing.
* [[/CleWin#CleWin 5 - local installation|'''With installation''' ]] of the CleWin 5 software on your local computer and obtaining a license from the DTU license server. [[/CleWin#CleWin 5 - local installation|Click here for guidelines.]]
* [[Media:Beginners guide to mask design using Clewin v1.4.pdf|"Beginners guide to mask design"]]. This is a guide how to design a set of mask.
 
* [[Media:Guide to mask making.pdf| Guide to mask making.pdf]]. Unfortunately this is quite old guide to mask design, but may be useful anyway. Note some links/e-mails etc. are not correct anymore and the mask specifications (CU/CD, DF/BF, RR/WR) are no longer valid.
Find the official [[Media:CleWin5UserGuide.pdf‎ |CleWin 5 User Guide here.]] The last document can also be found in the CleWin 5 installation directory (C:\Program Files (x86)\CleWin5) if you have made a local installation.
* [[Media:Mask polarity and orientation.pdf| Mask polarity and orientation.pdf]]. This is an short guide how to specify the polarity and orientation of the mask when ordering as well as when used on our maskless aligners. Be aware that the specification of polarity and orientation when ordering at Compugraphics is not the same as when ordering at Delta Mask as we used to do.
 
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If you have a Mac or Linux computer look [[/CleWin#Working with a Mac or Linux computer |here]].
===Alignment marks===
 
The following alignment marks are suggested to use on the Mask aligners for good pattern recognition. Pleased be adviced that they can be removed in KOH etching.
=== Layout file format===
*Mask aligner:
 
**[[Media:Alignmentkeys1.cif|Alignment marks 1 (.cif)]] (Right click and Use "save link as...") - ''You need the program "Clewin" to open this file''
* For '''E-beam lithography''' the layout file has to be saved as a GDS file that can be uploaded to the equipment computer.  
**[[Media:Alignmentkeys1.tdb|Alignment marks 1 (.tdb)]] - ''You need the program "L-Edit" to open this file''
 
*Maskless aligner:
* For '''laser cutting''' the layout file has to be saved as a DXF file that is uploaded to the equipment computer. For more details concerning pattern design for the laser see [[Specific_Process_Knowledge/Back-end_processing/Mask_making|Mask Making on the Laser Micro Machining Tool]].
**[[Media:MLA AlignmentMarks simple.gds|Simple alignment marks (.gds)]]
 
**[[Media:MLA_alignmentMarks_arrows.cif|Alignment marks with structures to assist in locating the marks during alignment (.cif)]]
* For '''UV-lithography''' it is necescary to have a physical masks produced based on the layout file. The file format has to be CIF or GDS.
**[[Media:AlignmentMark_KOH.cif|Alignment mark for multiple layers, Layer 1 for etch in KOH (.cif)]]
 
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* For '''DUV-lithography''' and DUV-lithography it is necescary to have physical masks (reticles) produced based on the layout file. The file format has to be GDS. For more details concerning the design of reticle see [[Specific_Process_Knowledge/Lithography/DUVStepperLithography#Process_information|Design of Reticles]].
 
=== Tips and tricks for mask designing ===
 
You can find a
* [[Media:Beginner_guide_to_mask_design_using_Clewin_v1.1.pdf‎|"Beginners guide to mask design"  here]] and
* [[Media:Guide to mask making.pdf | Guide to mask making.pdf]]. Unfortunately this is quite old, but may be useful anyway. Note some links/e-mails etc. are not correct anymore
 
 
===Mask drawing with Matlab and AutoCAD===
To come soon


===Alignment marks location===
For the mask aligners [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-1|MA6-1]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|MA6-2]]


== Mask Fabrication for UV-lithography ==
*For Top Side Alignment (TSA) alignment marks should be located 35-80 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y)
*For Back Side Alignment (BSA) alignment marks should be located 15-45 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y)
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===Alignment marks===
=== Alignment marks for E-beam lithography ===
The following alignment marks are suggested to use on the EVG620 automatic aligner for good pattern recognition. Pleased be adviced that they can be removed in KOH etching.
If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOLAlignment|to e-beam alignment here]]
*[[Media:Alignmentkeys2.cif|Alignment marks 2 .cif]] - ''You need the program "Clewin" to open this file''
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*[[Media:Alignmentkeys2.tdb|Alignment marks 2 .tdb]] - ''You need the program "L-Edit" to open this file''
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====Alignment marks location====
=== Helpful information for chip layout ===
For the [[Specific Process Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]], [[Specific Process Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6-2]] and [[Specific Process Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
*[[Media:Gamma coater & developer chucks + hotplate pins.gds|Gamma coater & developer chucks + hotplate pins.gds]] Design file showing the size of the chucks and the position of the hotplate pins in the Gamma tools.
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*The mask's alignment marks for 4inch process:
== Mask Ordering and Fabrication ==
**For Back Side Alignment (BSA) alignment marks must be located  between -1,0 and +1,0 mm in vertical location from mask center (y=0-+1mm) and  exactly at 45mm in left and right in horizontal location (x=+-45mm).
Our standard mask supplier is [https://www.macdermidalpha.com/semiconductor-solutions/compugraphics Compugraphics]. They can provide 5" and 7" masks on soda lime glass or quartz. Minimum feature size can be 0.8µm, 1µm or 1.5µm which is reflected in the price. Read a short guide on[[Media:Mask Ordering Guide.pdf| how to order photomasks from Compugraphics]] here. Templates for the mask specifications for 5" and 7" masks respectively can be seen [[/Mask Specifications| <b>here</b>.]]
**For Top Side Alignment (TSA) alignment marks must be located 35-45 mm in left and right in horizontal location and between -2 and +2 mm in vertical location.


*The mask's alignment marks for 6inch process:
The masks have to be ordered in Procure. Nanolab cannot order the mask for you but we do offer a final check of the design and mask specifications before you place the order. You can find a guide on [[Media:Maskordering in Fusion.pdf| how to order and attach design files in procure]] here.
**Both BSA and TSA must be located  between -2,5 and +2,5 mm in vertical location from mask center and 60 mm in left and right in horizontal location.
**Please notice that if you plan to use the automatic alignment option the alignment marks must be displaced from y=0 to y=+/- 1,6mm.


=== How to order a mask===
If you are using L-edit to design your mask you should remember to mark the top cell as the fabrication cell; a small pink <b style="color:magenta">''f''</b> should show to the left of the cell name in the Design Navigator.  
Our standard mask supplier is [http://deltamask.nl/ Delta Mask].
The smallest feature size obtainable from Delta Mask is 1.5 µm. If you need structures smaller than this please write it specificly in the e-mail. Be aware that this will increase the price by at least a factor of 3.
 
Send your CIF file or GDS file (for 7" mask or masks with CD less than 1.5µm only GDS formats should be used) in an e-mail along with a text file describing your specs ([[mask_spec|example spec file]]).
 
If you are using L-edit to design your mask you should remember to mark the top cell as the fabrication cell (a small red <b style="color:red">''f''</b> should show to the left of the cell name in the Design Navigator.  


Remember to make only the layers for fabrication visible. The remaining should be invisible.
Remember to make only the layers for fabrication visible. The remaining should be invisible.
Give each layer appropriate GDS number respectively CIF names before exporting the file. This is done by double click on the layers and fill out the window that pops up.   
Give each layer appropriate GDS number respectively CIF names before exporting the file. This is done by double click on the layers and fill out the window that pops up.   


E-mail address can be found in [[Danchip_contact_information]].  
We can also provide guidance regarding the mask design phase. Please contact the [mailto:nanolabsupport@nanolab.dtu.dk | Fabrication Support Team] for help and review.


Cost is available upon request. Write to [mailto:danchipsupport@danchip.dtu.dk danchipsupport@danchip.dtu.dk]
*[[Media:Maskordering in Fusion.pdf| How to order and attach design files in DTU Fusion]]
*[[/Mask Specifications| Templates for 5" and 7" Mask Specifications]]
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== Mask sets made by Danchip ==
== QC masks (DTU Nanolab)==
=== Danchip quality control masks ===


This section contains a description of some of the quality control designs.
This section contains a description of some of the quality control designs.


'''ASE standisation designs:'''
'''ASE standardisation designs:'''
The quality control procedure on the ASE is using the daqmask 2 mask
The quality control procedure on the ASE is using the daqmask 2 mask


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'''RIE standisation design:'''
'''RIE standardisation design:'''
The quality control procedures on RIE2 is using the dASEfeRIE mask
The quality control procedures on RIE2 is using the dASEfeRIE mask


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* [[file:dASEfeRIE.tdb | The L-Edit design file]]
* [[file:dASEfeRIE.tdb | The L-Edit design file]]


=== Masks for process development ===
'''Masks for process development'''
 
*[[Specific Process Knowledge/Pattern Design/Travka|Travka mask set (7 masks)]]


*[[../UVExposure/travka|Travka mask set (7 masks)]]


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Latest revision as of 12:47, 31 October 2025

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

Feedback to this page: click here

Pattern Design

For making a pattern on a substrate it is necessary to use a software tool to design the pattern layout. This counts for all kind of lithography and laser cutting. There are a number of different software tools that can be used, some of the more commonly used are:

At Nanolab we offer all users free access to CleWin 6 for their mask layout. You can find more information on how to install CleWin 6 on your local computer here.

Layout file format

There are different file formats available and not all equipment can handle each of them.

  • For UV-lithography, you create a layout file with your design. The file format should preferably be CIF or GDS, though DXF, or GERBER is acceptable too. The electronic mask layout can be used directly in one of our Mask Less Aligners (MLAs) or you can have a physical mask produced based on the layout file for our Mask Aligner. For more details see below Mask Fabrication for UV-lithography.
  • For DUV-lithography, a physical mask, called "reticles", is required. The file format must be GDS. For more details concerning the design of reticles see Reticle Design.
  • For E-beam lithography, you need to prepare a set of files (GDS, V30, sdf, jdf and mgn files). For more details, please see File preparation. For details about how to make aligned E-beam patterns, please have at look at Design of global marks and chip marks
  • For Laser Cutting using our [Specific Process Knowledge/Back-end processing/Laser Micromachining Tool|Laser Micromachining Tool], the layout file must be saved as DXF file.



Mask Design for UV-lithography

Here you can find tips and tricks for mask designing.

  • "Beginners guide to mask design". This is a guide how to design a set of mask.
  • Guide to mask making.pdf. Unfortunately this is quite old guide to mask design, but may be useful anyway. Note some links/e-mails etc. are not correct anymore and the mask specifications (CU/CD, DF/BF, RR/WR) are no longer valid.
  • Mask polarity and orientation.pdf. This is an short guide how to specify the polarity and orientation of the mask when ordering as well as when used on our maskless aligners. Be aware that the specification of polarity and orientation when ordering at Compugraphics is not the same as when ordering at Delta Mask as we used to do.


Alignment marks

The following alignment marks are suggested to use on the Mask aligners for good pattern recognition. Pleased be adviced that they can be removed in KOH etching.


Alignment marks location

For the mask aligners MA6-1 and MA6-2

  • For Top Side Alignment (TSA) alignment marks should be located 35-80 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y)
  • For Back Side Alignment (BSA) alignment marks should be located 15-45 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y)


Alignment marks for E-beam lithography

If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide to e-beam alignment here

Helpful information for chip layout


Mask Ordering and Fabrication

Our standard mask supplier is Compugraphics. They can provide 5" and 7" masks on soda lime glass or quartz. Minimum feature size can be 0.8µm, 1µm or 1.5µm which is reflected in the price. Read a short guide on how to order photomasks from Compugraphics here. Templates for the mask specifications for 5" and 7" masks respectively can be seen here.

The masks have to be ordered in Procure. Nanolab cannot order the mask for you but we do offer a final check of the design and mask specifications before you place the order. You can find a guide on how to order and attach design files in procure here.

If you are using L-edit to design your mask you should remember to mark the top cell as the fabrication cell; a small pink f should show to the left of the cell name in the Design Navigator.

Remember to make only the layers for fabrication visible. The remaining should be invisible. Give each layer appropriate GDS number respectively CIF names before exporting the file. This is done by double click on the layers and fill out the window that pops up.

We can also provide guidance regarding the mask design phase. Please contact the | Fabrication Support Team for help and review.


QC masks (DTU Nanolab)

This section contains a description of some of the quality control designs.

ASE standardisation designs: The quality control procedure on the ASE is using the daqmask 2 mask


RIE standardisation design: The quality control procedures on RIE2 is using the dASEfeRIE mask

Masks for process development