Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions
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''All contents by '''Nanolab staff.''''' | |||
==Deposition of Titanium Oxide== | ==Deposition of Titanium Oxide== | ||
Titanium oxide can be deposited | Titanium oxide can be deposited at Nanolab by sputtering, e-beam deposition, or ALD (atomic layer deposition). In sputtering and e-beam deposition of titanium oxide, the target is Ti and oxygen is added to the chamber during the process resulting in Titanium oxide on the sample. Therefore some process development may be necessary to achieve the correct stoichiometry. The oxygen flow in e-beam evaporation is lower than in sputtering, so it may not be possible to obtain fully oxidized TiO<sub>2</sub>, though we have not yet verified this. | ||
*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD|TiO2 deposition using ALD]] | |||
*[[Specific Process Knowledge/Thin film deposition/TiO2 deposition using Sputter-System Metal-Oxide(PC1)|TiO2 deposition using Sputter-System Metal-Oxide(PC1)]] | |||
*[[Specific Process Knowledge/Thin film deposition/TiO2 deposition in Sputter System (Lesker)|TiO2 deposition in Sputter System (Lesker)]] | |||
We also used to have the option to sputter-deposit [[/IBSD of TiO2|TiO2 with the IBE/IBSD Ionfab300]]. | |||
==Comparison of the methods for deposition of Titanium Oxide== | ==Comparison of the methods for deposition of Titanium Oxide== | ||
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|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
! | ![[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]] | ||
![[Specific Process Knowledge/Thin film deposition/ | ![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]] | ||
![[Specific Process Knowledge/Thin film deposition/ | ![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] | ||
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | ![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | ||
|- | |- | ||
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!Generel description | !Generel description | ||
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* | *Evaporation of Ti or TiO<sub>2</sub> pellets in the presence of a O<sub>2</sub> flow. | ||
*Can heat up to 250 °C | |||
| | | | ||
*Reactive DC sputtering of Ti target | *Reactive DC sputtering of Ti target | ||
*RF sputtering of | *Reactive or non-reactive RF sputtering of TiO<sub>2</sub> target | ||
*Reactive pulsed DC sputtering | |||
*Reactive HIPIMS (high-power impulse magnetron sputtering) | |||
*Can heat up to 6000 °C | |||
| | | | ||
* | *Reactive DC sputtering of Ti target in Ar/O<sub>2</sub> (10 % O<sub>2</sub>) plasma | ||
*RF sputtering of TiO<sub>2</sub> target | |||
| | | | ||
*ALD (atomic layer deposition of TiO<sub>2</sub> | *ALD (atomic layer deposition) of TiO<sub>2</sub> | ||
*Can heat up to 350 °C | |||
|- | |- | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Stoichiometry | !Stoichiometry and form | ||
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*Can probably be varied | *Can probably be varied, expect somewhat O-poor composition | ||
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* | *Can probably be varied | ||
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* | *Can probably be varied | ||
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*Temperature dependent - Anatase or amorphous TiO<sub>2</sub> | *Temperature dependent - Anatase or amorphous TiO<sub>2</sub> | ||
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!Film Thickness | !Film Thickness | ||
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* | *few nm - 100 nm | ||
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*~ | *~10 nm - ~0.5 µm | ||
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*~ | *~10 nm - ~0.5 µm (>2h) | ||
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* | * few nm - 100 nm | ||
|- | |- | ||
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!Deposition rate | !Deposition rate | ||
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* | *1-10 Å/s Ti deposition rate (oxidized layer growth should be faster; actual growth rate will need testing) | ||
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* | *not yet known, probably faster than Sputter-System(Lesker) | ||
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* | *3-5 nm/min (RF sputtering) | ||
*0.3 - 0.5 nm/min | |||
| | | | ||
* | * 0.06 nm/min - 0.40 nm/min (very recipe and temperature dependent) | ||
|- | |- | ||
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!Step coverage | !Step coverage | ||
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* | *expect no step coverage unless the tilted sample holder is used, in which case step coverage should be very good and may be tuned with the tilt angle. | ||
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*Not Known | *Not Known | ||
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*Not Known | *Not Known | ||
| | | | ||
*Very good. Covers sample everywhere (but long purge time needed | *Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures) | ||
|- | |- | ||
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!Process Temperature | !Process Temperature | ||
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* | *RT to 250 °C | ||
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* | *RT to 600 °C | ||
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* | *RT | ||
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*120 | *120 °C - 150 °C: Amorphous TiO<sub>2</sub> | ||
*300 | *300 °C - 350 °C: Anatase TiO<sub>2</sub> | ||
|- | |- | ||
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!More info on TiO2 | !More info on TiO2 | ||
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* | *Expect lower density than bulk material of same stoichiometry. | ||
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* | *[[Specific Process Knowledge/Thin film deposition/TiO2 deposition using Sputter-System Metal-Oxide(PC1)|TiO2 deposition using Sputter-System Metal-Oxide(PC1)]] | ||
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* | * | ||
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*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD|TiO2 deposition using | ALD1: | ||
*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD|TiO2 deposition using ALD1]] | |||
ALD2: | |||
*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiO2 deposition using ALD2|TiO2 deposition using ALD2]] | |||
|- | |- | ||
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!Substrate size | !Substrate size | ||
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* | *Up to 4x6" wafers | ||
* | *Up to 3x8" wafers (ask for holder) | ||
* | *smaller pieces | ||
* | | | ||
* | *many small samples | ||
*Up to 10x 100 mm or 150 mm wafers | |||
| | | | ||
*several small samples | *several small samples | ||
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*1x 150 mm wafers | *1x 150 mm wafers | ||
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ALD1: | |||
*1-5 100 mm wafers | *1-5 100 mm wafers | ||
*1-5 150 mm wafers | *1-5 150 mm wafers | ||
*1 200 mm wafer | |||
*Several smaller samples | |||
ALD2: | |||
*1 100 mm wafer | |||
*1 150 mm wafer | |||
*1 200 mm wafer | |||
*Several smaller samples | *Several smaller samples | ||
|- | |- | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! | !Allowed materials | ||
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*Almost any | *Almost any material that does not outgas at your intended substrate temperature and is not toxic | ||
* | *See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet] | ||
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*Almost any | *Almost any material that does not outgas at your intended substrate temperature | ||
*Pb and | *Pb and other toxic materials only after special agreement | ||
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*Almost any that do not outgas and are not very toxic | |||
*Dedicated carrier for III-V materials | |||
*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet] | |||
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*Silicon | |||
*Silicon | |||
*Silicon oxide, silicon nitride | *Silicon oxide, silicon nitride | ||
*Quartz/fused silica | *Quartz/fused silica | ||
* | *Metals - Use a dedicated carrier wafer | ||
*III-V materials - Use dedicated carrier wafer | |||
*Polymers - Depending on the melting point/deposition temperature, use dedicated carrier wafer. Ask for permission | |||
*III-V materials | |||
*Polymers | |||
|- | |- | ||
|} | |} |
Latest revision as of 11:46, 29 August 2024
Feedback to this page: click here
All contents by Nanolab staff.
Deposition of Titanium Oxide
Titanium oxide can be deposited at Nanolab by sputtering, e-beam deposition, or ALD (atomic layer deposition). In sputtering and e-beam deposition of titanium oxide, the target is Ti and oxygen is added to the chamber during the process resulting in Titanium oxide on the sample. Therefore some process development may be necessary to achieve the correct stoichiometry. The oxygen flow in e-beam evaporation is lower than in sputtering, so it may not be possible to obtain fully oxidized TiO2, though we have not yet verified this.
- TiO2 deposition using ALD
- TiO2 deposition using Sputter-System Metal-Oxide(PC1)
- TiO2 deposition in Sputter System (Lesker)
We also used to have the option to sputter-deposit TiO2 with the IBE/IBSD Ionfab300.
Comparison of the methods for deposition of Titanium Oxide
E-beam evaporator (10-pockets) | Sputter-system Metal-Oxide(PC1) | Sputter-System(Lesker) | ALD Picosun 200 | |
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Generel description |
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Stoichiometry and form |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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More info on TiO2 |
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ALD1: ALD2: | |
Substrate size |
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ALD1:
ALD2:
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Allowed materials |
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