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'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure click here]'''
{{cc-nanolab}}


== UV Exposure Comparison Table ==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/UVExposure click here]'''


[[Category: Equipment|Lithography exposure]]
[[Category: Lithography|Exposure]]


{| border="2" cellspacing="0" cellpadding="2"  
__TOC__
 
=UV Exposure Comparison Table=
 
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: MA6-1|Aligner: MA6-1]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|Aligner: MA6-2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 01|Aligner: Maskless 01]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#III-V Aligner|III-V Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 02|Aligner: Maskless 02]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 03|Aligner: Maskless 03]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 04|Aligner: Maskless 04]]</b>
<!--|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>-->


|-
|-
Line 20: Line 29:
*Back Side Alignment
*Back Side Alignment
*UV exposure
*UV exposure
OBS: this tool is in PolyFabLab
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Top Side Alignment
Line 25: Line 35:
*UV exposure
*UV exposure
*(DUV exposure)
*(DUV exposure)
*Bond alignment
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Top Side Alignment
*Back Side Alignment
*Back Side Alignment
*UV exposure  
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Top Side Alignment
*UV exposure
*Back Side Alignment
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Maskless UV exposure
*Direct laser writing
OBS: this tool is in PolyFabLab
<!--|style="background:WhiteSmoke; color:black"|
*UV exposure
*UV exposure
*DUV exposure
*DUV exposure-->


|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Performance
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1.25µm down to 1.0µm
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
<!--|style="background:WhiteSmoke; color:black"|-->
 
|-
|style="background:LightGrey; color:black"|Alignment accuracy
|style="background:WhiteSmoke; color:black"|
*TSA: ±2 µm
*BSA: ±5 µm
|style="background:WhiteSmoke; color:black"|
*TSA: ±1 µm
*BSA: ±2 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1.25µm down to 0.5µm
±2 µm<br>(±1 µm possible)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1.25µm
*TSA: ± 0.5 µm
*BSA: ± 1 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*2µm
*TSA: ± 0.5 µm
*BSA: ± 1 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
±1 µm
<!--|style="background:WhiteSmoke; color:black"|-->
|-
|-
|style="background:LightGrey; color:black"|Exposure light/filters/spectrum
|style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*350W Hg lamp
*350W Hg lamp
*i-line filter (365nm notch filter), intensity in Constant Intensity mode: 7mW/cm<sup>2</sup> @ 365nm
*i-line filter (365nm bandpass filter)
*303nm filter optional
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*500W Hg-Xe lamp
*500W Hg-Xe lamp
*i-line filter (365nm notch filter), intensity in Constant Intensity mode: ~13mW/cm<sup>2</sup> @ 365nm
*i-line filter (365nm bandpass filter)
*UV350 optics optional
*UV250 optics optional
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*350W Hg lamp
365nm LED
*SU8 filter (long-pass), intensity in Constant Power mode: 7mW/cm<sup>2</sup> @ 365nm
|style="background:WhiteSmoke; color:black"|
*i-line filter optional
375nm laser diode array
 
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*350W Hg lamp
405nm laser diode array
*the entire 350W Hg-lamp spectrum, intensity in Constant Power mode: 5mW/cm<sup>2</sup> @ 365nm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*365nm LED
*405nm laser diode
<!--|style="background:WhiteSmoke; color:black"|
*1000 W Hg-Xe lamp
*1000 W Hg-Xe lamp
*near UV (350-450nm), mid UV (260-320nm), and deep UV (220-260nm)
*Dichroic mirror:
**Near UV (350-450nm)
**Mid UV (260-320nm)
**Deep UV (220-260nm)-->


|-
|-
|style="background:LightGrey; color:black"|Exposure mode
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
*Flood exposure
*Proximity
*Contact:
**Soft contact
**Hard contact
**Vacuum contact
|style="background:WhiteSmoke; color:black"|
*Flood exposure
*Proximity
*Contact:
**Soft contact
**Hard contact
**Vacuum contact
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
*Projection:
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
*Projection:
**Optical auto-focus
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
*Projection:
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Projection:
**Optical auto-focus
**Pneumatic auto-focus
*Direct laser writing:
**Optical auto-focus
**Pneumatic auto-focus
<!--|style="background:WhiteSmoke; color:black"|
*Flood exposure
*Flood exposure
*Proximity exposure with home-made chuck and maskholder
*Proximity exposure with home-made chuck and maskholder
*Inclined exposure
*Rotating exposure-->


|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 100 mm wafer
|style="background:WhiteSmoke; color:black"|
*1 small sample, down to 10x10 mm<sup>2</sup>
*1 50 mm wafer
*1 50 mm wafer
*1 100 mm wafer
*1 100 mm wafer
*1 150 mm wafer
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 small sample, down to 5x5 mm<sup>2</sup>
*1 50 mm wafer
*1 100 mm wafer
*1 150 mm wafer (exposure area only 125x125 mm<sup>2</sup>)
|style="background:WhiteSmoke; color:black"|
*1 small sample, down to 3x3 mm<sup>2</sup>
*1 50 mm wafer
*1 50 mm wafer
*1 100 mm wafer
*1 100 mm wafer
*1 150 mm wafer
*1 150 mm wafer
*1 200 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 50 mm wafers
*1 small sample, down to 5x5 mm<sup>2</sup>
*1 100 mm wafers
*1 50 mm wafer
*1-25 150 mm wafers with automatic handling
*1 100 mm wafer
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 small sample, down to 3x3 mm<sup>2</sup>
*1 50 mm wafer
*1 50 mm wafer
*1 100 mm wafer
*1 100 mm wafer
*1 150 mm wafer
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
<!--|style="background:WhiteSmoke; color:black"|
*all sizes up to 8inch
*all sizes up to 8inch-->
 
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials
*All PolyFabLab materials
*Dedicated 2inch chuck for III-V materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
 
*All cleanroom materials except copper and steel
*Dedicated chuck for III-V materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials except III-V materials
*All cleanroom materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*III-V compounds
*All cleanroom materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials
*All cleanroom materials
|style="background:WhiteSmoke; color:black"|
*All PolyFabLab materials
<!--|style="background:WhiteSmoke; color:black"|
*All cleanroom materials-->
|-  
|-  
|}
|}


<br clear="all" />
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MA6-1}}
 
== KS Aligner ==
[[Image:KSAligner in E-4.jpg|300x300px|thumb|The KS Aligner is placed in E-4]]
 
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner click here]'''
 
SUSS Mask Aligner MA6 is designed for high resolution photolithography.
The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied.
Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.
 
'''The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager].'''
 
===Process information===
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm. Dependent on the spectral sensitivity of the resist, the optimal dose may be increased compared to broadband exposure on the Aligner-6inch.
 
*[[Specific Process Knowledge/Lithography/UVExposure_Dose|Information on UV exposure dose]]
 
<br clear="all" />
 
==Aligner: MA6 - 2==
This section is under construction [[Image:section under construction.jpg|70px]]
 
Aligner: MA6 - 2 will be released for use Q3 2015.
 
[[Image:AlignerMA6-2 in E-4.jpg|300x300px|thumb|The Aligner: MA6 - 2 is placed in E-4]]
 
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2 click here]'''
 
The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography.
The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied.
Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA (video) microscope.


'''The user manual, APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=339 LabManager].'''
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MA6-2}}


===Process information===
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA1}}
The Aligner: MA6 - 2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. Dependent on the spectral sensitivity of the resist, the optimal dose may be increased compared to broadband exposure on the Aligner-6inch.


The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA2}}


*[[Specific Process Knowledge/Lithography/UVExposure_Dose|Information on UV exposure dose]]
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA3}}


=== Equipment performance and process related parameters ===
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA4}}


{| border="2" cellspacing="0" cellpadding="2"
=Decommisioned tools=
 
<span style="color:red">Inclined UV lamp was decommissioned 2023.</span>
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Alignment and UV exposure, potentially DUV exposure
|-
 
!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance
 
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
vacuum contact, hard contact, soft contact, proximity, flood exposure
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*broadband (i-, g-, h-line)
*365 nm (i-line)
*DUV (240 nm) <sup>1)</sup>
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
down to 0.5µm <sup>1)</sup>
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*5x5inch
*7x7inch
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*Top side (TSA)
*Backside (BSA)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* small pieces 1x1cm
* 50 mm wafers
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
??
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1
|-
|}
 
<sup>1)</sup> Not available yet.
 
<br clear="all" />
 
== Aligner-6inch ==
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch click here]'''
 
[[Image:EVG620.jpg|300x300px|thumb|right|Aligner-6inch EVG620 is placed in E-5]]
 
Aligner-6inch, EVG620 aligner,  is designed for high resolution photolithography.
The machine can be used for 2, 4 and 6 inch substrates. Cassette-to-cassette handling option is available only for 6inch substrates.
The automatic pattern recognition software is available for the special alignment marks design recommended of EVGroup. Please contact Danchip staff for further information. 
Available exposure mode: proximity, soft, hard and vacuum contact.
Two alignment options are available: top side alignment (TSA) and back side alignment (BSA). IR-light alignment also an option.
 
'''The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=201 LabManager]'''
 
===Process information===
The Aligner-6inch has a long pass filter designed for SU-8 exposure installed. The SU-8 filter has no transmission in the 250-330nm range, and close to full transmission in the 400-500nm range. In the 350-370nm range, the transmission is approximately 0.5. This results in a broadband exposure light consisting of the i-line (365nm), the h-line (405nm), and the g-line (435nm) from the Hg spectrum. Dependent on the spectral sensitivity of the resist, the optimal dose may be decreased compared to i-line exposure on the KS-Aligner.
 
*[[Specific Process Knowledge/Lithography/UVExposure_Dose|Information on UV exposure dose]]
 
<br clear="all" />
 
== III-V Aligner ==
 
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#III-V_Aligner click here]'''
 
The K&W MA1006 mask aligner located in the III-V cleanroom is dedicated for processing of III-V compound semiconductors.
 
Specific use of the mask aligner can be found in the standard resist recipes.
 
[[Image:IMG_3078.jpg|300x300px|thumb|III-V Aligner positioned in A-5]]
 
'''The user manual and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=183 LabManager]
 
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Alignment and UV exposure
|-
 
!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance
 
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
soft contact, hard contact, proximity, flood exposure
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
365 nm, 405 nm
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
down to 2µm
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*3x3inch
*5x5inch (with adapter)
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Top side only
 
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* 50 mm wafers
* small pieces 1x1cm
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
III-V materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1
|-
|}
 
<br clear="all" />
 
==Inclined UV Lamp==
 
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Inclined_UV_lamp click here]'''
 
[[Image:Inclined UV lamp_1.jpg|300x300px|right|thumb|Inclined UV lamp is placed in E-5]]
 
The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.
 
The tool was purchased in February 2009 from Newport. The exposure lamp has a official name: Oriel Flood Exposure Source, unit 92540. All other parts of equipment: substrate and mask holder with media tank, exhaust box around the tool, timer controller, were designed and build at DTU Danchip workshop.
 
The substrate and mask holder with a media tank was designed as part of Master Thesis of DTU Nanotech, Andres Kristensen group. The exhaust box was made as part of safety and the timer controller was build to control exposure time.
 
The technical specification and the general outline of the equipment can be found in LabManager. 
 
'''The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=259 LabManager].'''
 
<br clear="all" />
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
UV exposure
|-
 
!style="background:silver; color:black" align="left" rowspan="5"|Performance
 
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*Flood exposure
*Proximity exposure with mask possible for 4inch substrate
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* Near UV(350-450nm)
* Mid UV (260-320nm)
* Deep UV(220-260nm)
 
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
 
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
5x5inch optinal
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
No alignment possible
 
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Up to 8inch substrates, different shapes
|-
| style="background:LightGrey; color:black"|Allowed materials
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All cleanroom materials
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|style="background:LightGrey; color:black"|Batch
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1
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[[Specific Process Knowledge/Lithography/UVExposure/aligner_inclinedUV|Information about decommissioned tool can be found here.]]
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