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==Etching of Aluminium==
==Etching of Aluminium==
Etching of aluminium is done wet at Danchip. We have two different solutions:


# H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2 at 50 <sup>o</sup>C
Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.
# Pre-mixed etch solution: PES 77-19-04 at 20 <sup>o</sup>C
*[[Specific Process Knowledge/Etch/Wet Aluminium Etch|Etching of Al by wet etch]]
*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/Aluminium|Etching of Al by dry etch]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Sputtering of Al]]
<br clear="all" />


==Comparison of Aluminium Etch Methods==


===Comparing the two solutions===
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-


{| border="1" cellspacing="0" cellpadding="4" align="left"
!
! Aluminium Etch 1
! Aluminium Etch 2
|-
|General description
|
Etch of pure aluminium
|
Etch of aluminium + 1.5% Si
|-
|-
|Chemical solution
|-style="background:silver; color:black"
|H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2
!
|PES 77-19-04
![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Aluminium Etch]]
![[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual|Developer TMAH manual]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-
|Process temperature
|50 <sup>o</sup>C


|20 <sup>o</sup>C
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Wet etch of Al
|Wet etch/removal: TMAH<br>
Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]]
|Dry plasma etch of Al
|Sputtering of Al - pure physical etch.
|-


|-
|-style="background:LightGrey; color:black"
!Etch rate range
|
*~60-100nm/min
|
*~30nm/min (pure Al)
|
*~350 nm/min (depending on features size and etch load)
|
*~30nm/min (not tested yet)
|-
|-


|Possible masking materials:
|-
|-style="background:WhiteSmoke; color:black"
!Etch profile
|
|
Photoresist (1.5 µm AZ5214E)
*Isotropic
|
|
Photoresist (1.5 µm AZ5214E)
*Isotropic
|-
|Etch rate
|
|
~100 nm/min (Pure Al)
*Anisotropic (vertical sidewalls)
|
|
~60(??) nm/min
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
 
 
|-
|-
|Batch size
|-style="background:LightGrey; color:black"
!Substrate size
|
|
1-25 wafers at a time
*100 mm wafers (in bath)
*150 mm wafers (in bath)
*Any size (in beaker)
|
|
1-25 wafer at a time
*Chips (6-60 mm)
|-
*100 mm wafers
|Size of substrate
*150 mm wafers
|
|
4" wafers
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
|
|
4" wafers
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
 
|-
|-
|Allowed materials
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
|In 'Aluminium Etch' bath:
*See Cross Contamination Sheet for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=381 Aluminium Etch] bath (require login)
In beaker:
*Any material
|
|
*Every thing that is allowed in the Developer: TMAH Manual
|
*Silicon
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Aluminium
*Silicon
*Titanium
*Silicon Oxide
*Chromium
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
|
|
*Aluminium
*Silicon
*Silicon
*Silicon oxides
*Silicon Oxide
*Silicon nitrides
*Silicon Nitride
*Metals from the +list
*Silicon Oxynitride
*Metals from the -list
*Photoresist
*Alloys from the above list
*E-beam resist
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}
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