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== UV Exposure Comparison Table ==
{{cc-nanolab}}


'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/UVExposure click here]'''


{| border="2" cellspacing="0" cellpadding="2"  
[[Category: Equipment|Lithography exposure]]
[[Category: Lithography|Exposure]]
 
__TOC__
 
=UV Exposure Comparison Table=
 
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: MA6-1|Aligner: MA6-1]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|Aligner: MA6-2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#III-V Aligner|III-V Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 01|Aligner: Maskless 01]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 02|Aligner: Maskless 02]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 03|Aligner: Maskless 03]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 04|Aligner: Maskless 04]]</b>
<!--|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>-->


|-
|-
Line 14: Line 26:
|style="background:LightGrey; color:black"|  
|style="background:LightGrey; color:black"|  
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*TS and BS Alignment
*Top Side Alignment
*UV exposure  
*Back Side Alignment
*UV exposure
OBS: this tool is in PolyFabLab
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*TS and BS Alignment
*Top Side Alignment
*UV exposure  
*Back Side Alignment
*UV exposure
*(DUV exposure)
*Bond alignment
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*TS Alignment
*Top Side Alignment
*UV exposure
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Back Side Alignment
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Back Side Alignment
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Maskless UV exposure
*Direct laser writing
OBS: this tool is in PolyFabLab
<!--|style="background:WhiteSmoke; color:black"|
*UV exposure
*UV exposure
*DUV exposure-->


|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Performance
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1.25µm down to 1.0µm
~1 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1.25µm
~1 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*2µm
~1 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
|-
~1 µm
|style="background:LightGrey; color:black"|Exposure light/filters/spectrum
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*350W Hg-lamp
~1 µm
*365 nm notch filter, intensity in Constant Intensity mode: 7mW/cm2 @ 365 nm
*303 nm filter optional
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*350W Hg-lamp
~1 µm
*SU8 filter (long-pass), intensity in Constant Power mode: 7mW/cm2 @ 365 nm
<!--|style="background:WhiteSmoke; color:black"|-->
*365 nm filter optional


|-
|style="background:LightGrey; color:black"|Alignment accuracy
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*350W Hg-lamp
*TSA: ±2 µm
*the hole spectrum of 350W hg-lamp
*BSA: ±5 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1000 W Hg(Xe)lamp source
*TSA: ±1 µm
*near UV (350-450nm), mid UV (260-320nm), and deep UV (220-260nm)
*BSA: ±2 µm
 
|-
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
±2 µm<br>(±1 µm possible)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
*TSA: ± 0.5 µm
*BSA: ± 1 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
*TSA: ± 0.5 µm
*BSA: ± 1 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Flood exposure
±1 µm
*Proximity exposure with home-made chuck and maskholder
<!--|style="background:WhiteSmoke; color:black"|-->


|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Exposure light
|style="background:LightGrey; color:black"|Positive Process
|style="background:WhiteSmoke; color:black"|
*dose 42mW/cm2 for 1,5um AZ5214E resist
*dose 56mW/cm2 for 2,2um AZ5214E resist
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*dose 23mW/cm2 for 1,5um AZ5214E resist
*350W Hg lamp
*dose 35mW/cm2 for 2,2um AZ5214E resist
*i-line filter (365nm bandpass filter)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*
*500W Hg-Xe lamp
|style="background:WhiteSmoke; color:black"|
*i-line filter (365nm bandpass filter)
*polymer depended
 
|-
|style="background:LightGrey; color:black"|Negative Process
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*dose 21mW/cm2 for 1,5um AZ5214E resist
365nm LED
*dose 28mW/cm2 for 2,2um AZ5214E resist
then 210mW/cm2 flood exposure after PEB
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*dose 16mW/cm2 for 1,5um AZ5214E resist
375nm laser diode array
*dose 18mW/cm2 for 2,2um AZ5214E resist
then 210mW/cm2 flood exposure after PEB
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*
405nm laser diode array
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*polymer depended
*365nm LED
*405nm laser diode
<!--|style="background:WhiteSmoke; color:black"|
*1000 W Hg-Xe lamp
*Dichroic mirror:
**Near UV (350-450nm)
**Mid UV (260-320nm)
**Deep UV (220-260nm)-->


|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Exposure mode
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<nowiki>1</nowiki> small sample
*Flood exposure
*<nowiki>1</nowiki> 50 mm wafers
*Proximity
*<nowiki>1</nowiki> 100 mm wafers
*Contact:
*<nowiki>1</nowiki> 150 mm wafers
**Soft contact
**Hard contact
**Vacuum contact
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<nowiki>1</nowiki> 50 mm wafers
*Flood exposure
*<nowiki>1</nowiki> 100 mm wafers
*Proximity
*<nowiki>25</nowiki> 150 mm wafers with automatic handling
*Contact:
|style="background:WhiteSmoke; color:black"|
**Soft contact
*<nowiki>1</nowiki> small samples
**Hard contact
*<nowiki>1</nowiki> 50 mm wafers
**Vacuum contact
*<nowiki>1</nowiki> 100 mm wafers
*<nowiki>1</nowiki> 150 mm wafers
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*all sizes up to 8inch
*Projection:
|-
**Pneumatic auto-focus
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials
*Projection:
*Dedicated 2inch chuck for III-V materials
**Optical auto-focus
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials except III-V materials
*Projection:
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*III-V compounds
*Projection:
|style="background:WhiteSmoke; color:black"|
**Optical auto-focus
*All cleanroom materials
**Pneumatic auto-focus
|-  
*Direct laser writing:
|}
**Optical auto-focus
**Pneumatic auto-focus
<!--|style="background:WhiteSmoke; color:black"|
*Flood exposure
*Proximity exposure with home-made chuck and maskholder
*Inclined exposure
*Rotating exposure-->


<br clear="all" />
|-
 
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
== KS Aligner ==
|style="background:LightGrey; color:black"|Batch size
 
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner click here]'''
 
[[Image:KSaligner.jpg|300x300px|thumb|The KSaligner MA6 is placed in Cleanroom 3.]]
 
 
SUSS Mask Aligner MA6 is designed for high resolution photolithography.
The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied.
Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.
 
'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager]
 
<br clear="all" />
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Alignment and UV exposure
*1 100 mm wafer
|-
 
!style="background:silver; color:black" align="left" valign="top" rowspan="5"|Performance
 
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
soft contact, hard contact, proximity, flood exposure
*1 small sample, down to 10x10 mm<sup>2</sup>
|-
*1 50 mm wafer
| style="background:LightGrey; color:black"|Exposure light/filters
*1 100 mm wafer
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*365 nm, light intensity 7,0 mW&cm2 in Constant Intansity (CI2)mode
*1 small sample, down to 5x5 mm<sup>2</sup>
*303 nm filters optinal
*1 50 mm wafer
|-
*1 100 mm wafer
|style="background:LightGrey; color:black"|Minimum structure size
*1 150 mm wafer (exposure area only 125x125 mm<sup>2</sup>)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
down to 1µm
*1 small sample, down to 3x3 mm<sup>2</sup>
|-
*1 50 mm wafer
|style="background:LightGrey; color:black"|Mask size
*1 100 mm wafer
*1 150 mm wafer
*1 200 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*5x5inch
*1 small sample, down to 5x5 mm<sup>2</sup>
*7x7inch
*1 50 mm wafer
|-
*1 100 mm wafer
|style="background:LightGrey; color:black"|Alignment modes
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment(TSA)
*1 small sample, down to 3x3 mm<sup>2</sup>
*Bottom Side Alignment(BSA)
*1 50 mm wafer
 
*1 100 mm wafer
|-
*1 150 mm wafer
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
<!--|style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|Substrate size
*all sizes up to 8inch-->
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* 50 mm wafers
* 110 mm wafers
* 150 mm wafers


|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* All cleanroom materals
* III-V materials chuck optinal
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1
|-
|}
<br clear="all" />
<br clear="all" />
== Aligner-6inch ==
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch click here]'''
[[Image:EVG620.jpg|300x300px|thumb|right|Aligner-6inch EVG620 is placed in Cleanroom 13.]]
Aligner-6inch, EVG620 aligner,  is designed for high resolution photolithography.
The machine can be used for 2, 4 and 6 inch substrates. Cassette-to-cassette handling option is available only for 6inch substrates.
The automatic pattern recognition software is available for the special alignment marks design recommended of EVGroup. Please contact Danchip staff for further information. 
Available exposure mode: proximity, soft, hard and vacuum contact.
Two alignment options are available: top side alignment (TSA) and back side alignment (BSA). IR-light alignment also an option.
'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=201 LabManager]
<br clear="all" />
== III-V Aligner ==
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#III-V_Aligner click here]'''
The SÜSS MicroTec MA1006 mask aligner located in the III-V cleanroom is dedicated for processing of III-V compound semiconductors.
Specific use of the mask aligner can be found in the standard resist recipes.
[[Image:IMG_3078.jpg|300x300px|thumb|III-V Aligner positioned in III-V cleanroom ]]
<br clear="all" />
=== Equipment performance and process related parameters ===
{| border="2" cellspacing="0" cellpadding="2"
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Alignment and UV exposure
*All PolyFabLab materials
|-
 
!style="background:silver; color:black" align="left" valign="top" rowspan="5"|Performance
 
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
soft contact, hard contact, proximity, flood exposure
*All cleanroom materials except copper and steel
|-
*Dedicated chuck for III-V materials
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
365 nm, 405 nm
*All cleanroom materials
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
down to 2µm
*All cleanroom materials
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
5x5inch
*All cleanroom materials
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Top side only
*All PolyFabLab materials
 
<!--|style="background:WhiteSmoke; color:black"|
|-
*All cleanroom materials-->
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* 50 mm wafers
* small pieces 1x1cm
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
III-V materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1
|-  
|-  
|}
|}


<br clear="all" />
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MA6-1}}
 
==Inclined UV Lamp==
 
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Inclined_UV_lamp click here]'''
 
 
[[Image:Inclined UV lamp_1.jpg|300×300px|right|thumb|Inclined UV lamp is placed in Cleanroom 13.]]


The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MA6-2}}


The tool was purchased in February 2009 from Newport. The exposure lamp has a official name: Oriel Flood Exposure Source, unit 92540. All other parts of equipment: substrate and mask holder with media tank, exhaust box around the tool, timer controller, were designed and build at DTU Danchip workshop.
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA1}}


The substrate and mask holder with a media tank was designed as part of Master Thesis of DTU Nanotech, Andres Kristensen group. The exhaust box was made as part of safety and the timer controller was build to control exposure time.
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA2}}


The technical specification and the general outline of the equipment can be found in LabManager. 
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA3}}


'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA4}}
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=259 LabManager]


=Decommisioned tools=
<span style="color:red">Inclined UV lamp was decommissioned 2023.</span>


<br clear="all" />
[[Specific Process Knowledge/Lithography/UVExposure/aligner_inclinedUV|Information about decommissioned tool can be found here.]]
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/UVExposure"