Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions

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Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching

Parameter	Recipe name: SiO2_res_10	Recipe name: DOE2/Post_II_21
Coil Power [W]	2500	3840
Platen Power [W]	300	300
Platen temperature [^oC]	20	20
H2 flow [sccm]	25.6	0
He flow [sccm]	448.7	0
C₄F₈ flow [sccm]	25.6	30
Pressure [mTorr]	8.8	0.9

Measured results	SiO2_res_10	DOE2/Post_II_21
Average etch of SRN on 6" wafer	166 nm/min [+- 17% over a 6" wafer]	142 nm/min [+- 9% over a 6" wafer]
Etch rate of Si3N4	?	?
Etch rate of SiO2	250 nm/min [+- 3% over a 6" wafer]	306 nm/min [on small piece]
Etch rate in Si	?nm/min	? nm/min
Etch rate of Mir resist	? nm/min	? nm/min

Etch rate uniformity

SRN (LPCVD) etch uniformity with recipes optimized for SiO2 etching tested on unpatterned wafers

Adding electromagnets (EM) to see if that could improve the uniformity

Recipe used: SiO2_res_10

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 ==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==
-{{CC-bghe2}}<br>
 {| border="2" cellspacing="2" cellpadding="3"
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 File:SRN etch uniformity DOE2_Post_II_21.jpg
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+====Adding electromagnets (EM) to see if that could improve the uniformity====
+Recipe used: SiO2_res_10<br>
+[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]
+[[File:Contour Plot SNR_a12 etch rate.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60% ]]