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Created page with "==Aligner: Maskless 02== 400px|thumb|Aligner: Maskless 02 is located in E-5. MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023). '''Special features''' *Optical Autofocus *Backside Alignment *Basic Gray Scale Exposure *Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate *High Aspect Ratio Mode for exposure of thick resists *200 x..."
 
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==Aligner: Maskless 02==
=Aligner: Maskless 02=
[[File:Aligner MLA 2.jpg|400px|thumb|Aligner: Maskless 02 is located in E-5.]]
[[File:Aligner MLA 2.jpg|400px|thumb|Aligner: Maskless 02 is located in E-5.]]
MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023).


'''Tool description'''<br>
The MLA2 is a UV exposure tool, which can be used for direct writing of digital mask designs, on photosensitive resists on chips, 50 mm, 100 mm, 150 mm and 200 mm substrates.


'''Special features'''
{| class="wikitable"
*Optical Autofocus
! style="text-align:left" | Product:
*Backside Alignment
| style="padding-left: 10px" | Heidelberg Instruments MLA150 WM I Maskless Aligner
*Basic Gray Scale Exposure
*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
*High Aspect Ratio Mode for exposure of thick resists
*200 x 200 mm exposure field
*Separate conversion PC
 
Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design]].
 
'''[https://www.youtube.com/playlist?list=PLjWVU97LayHAiCabstMfAUeeWyQoQI_cV Training videos]'''
 
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=440 LabManager] - '''requires login'''
 
===Exposure dose and defocus===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_02|Information on UV exposure dose]]
 
===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing|Process information]]===
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Process_Parameters|Process Parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Features|Features]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Alignment|Alignment]]
 
===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 02 (MLA2) - Dose and Defoc'''
|-
|-
|
! style="text-align:left" | Year of purchase:   
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=440 The QC procedure for Aligner: Maskless 02 (MLA2)] - '''requires login'''<br>
| style="padding-left: 10px" | 2018
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=440 The newest QC data for Aligner: Maskless 02 (MLA2)] - '''requires login'''
{| {{table}}
| align="center" |  
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"
 
! QC Recipe:
! Dose and defocus test on 1.5µm AZ5214E
|-
|Dose test
|Last QC value ± 20 mJ/cm<sup>2</sup> (9 steps total)
|-
|Defoc test
|Last QC value ± 8 (9 steps total)
|-
|-
|}
! style="text-align:left" | Tool modification:   
| align="center" valign="top"|
| style="padding-left: 10px" | Modified from WM1 to WM2 in 2023
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: Maskless 02 (MLA2)
|-
|Dose
|none
|-
|Defoc
|none
|-
|-
! style="text-align:left" | Location:
| style="padding-left: 10px" | Cleanroom E-5
|}
|}
|-
|}
Dose and defoc values are reported in the QC data sheet.
|}
<br/>
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 02 (MLA2) - Alignment'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=440 The QC procedure for Aligner: Maskless 02 (MLA2)] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=440 The newest QC data for Aligner: Maskless 02 (MLA2)] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"


! QC Recipe:
'''Features'''
! Alignment accuracy test
*Optical Autofocus (enables chips down to 3 x 3 mm)
|-
*Pneumatic Autofocus
|Topside alignment
*Top side Alignment
|Expose an overlay design after automatic alignment to 4 alignment marks using the High Res camera and applying scaling and shearing.
*Back side Alignment
*Gray Scale Exposure (no alignment)
*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
*<del>High Aspect Ratio Mode for exposure of thick resists</del> (available but not correctly adjusted)
*200 x 200 mm exposure field
 
'''User manual'''<br>
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=440 LabManager] - '''requires login'''


Alignment accuracy in 9 points across a 100mm wafer is measured, the average alignment error is reported.
'''Tool training'''<br>
|-
Training on the tool requires users to complete the [https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography#Lithography_Tool_Package_Training lithography TPT] followed by the online tool training and a hands-on authorization training.<br>
|Backside alignment
<br clear="all" />
|Expose an overlay design after automatic alignment to 4 backside alignment marks and applying scaling and shearing. Rotate the wafer 180° and repeat.


Alignment accuracy in 9 points across a 100mm wafer is measured, half the average alignment error is reported.
=Equipment performance and process related parameters=
|-
{| class="wikitable"
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: Maskless 02 (MLA2)
|-
|-
|Topside alignment error
! scope=row style="text-align: left;" | Purpose
|>0.5µm
| Alignment and UV exposure
|-
|-
|Backside alignment error
! scope=row style="text-align: left;" | Exposure modes
|>1µm
| Projection
|-
|-
|}
! scope=row style="text-align: left;" | Exposure light/filters
| 375 nm (laser diode array)
|-
|-
|}
! scope=row style="text-align: left;" | Dynamic focusing method
Camera offsets will be adjusted if alignment error is outside the limit.
|  
|}
<br/>
 
=== Equipment performance and process related parameters ===
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
 
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure
|-
 
!style="background:silver; color:black" align="left" valign="center" rowspan="6"|Performance
 
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
Projection
|-
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" colspan="2"|
*375 nm<br>
(laser diode arrays)
|-
|style="background:LightGrey; color:black"|Focusing method
|style="background:WhiteSmoke; color:black" colspan="2"|
*Optical
*Optical
*Pneumatic
*Pneumatic
|-
|-
|style="background:LightGrey; color:black"|Minimum structure size
! scope=row style="text-align: left;" | Minimum resolution
|style="background:WhiteSmoke; color:black" colspan="2"|
| ~1 µm
down to 1 µm
|-
|-
|style="background:LightGrey; color:black"|Design formats
! scope=row style="text-align: left;" | Design file formats
|style="background:WhiteSmoke; color:black" colspan="2"|
|  
*'''GDS-II'''
*GDS-II
*CIF
*CIF
*DXF
*DXF
Line 147: Line 64:
*HIMT format
*HIMT format
|-
|-
|style="background:LightGrey; color:black"|Alignment modes
! scope=row style="text-align: left;" | Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
|  
*Top side alignment, ±0.5µm
*Top side (TSA): ±0.5 µm
*Backside alignment, ±1.0µm
*Back side (TSA): ±1 µm
*Field alignment (chip-by-chip TSA), ±0.25µm (within 5x5mm<sup>2</sup> area)
*Advanced field alignment (chip-by-chip TSA): ±0.25 µm
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Substrate size
|style="background:LightGrey; color:black"|Substrate size
|  
|style="background:WhiteSmoke; color:black" colspan="2"|
*Maximum writing area: 200 mm x 200 mm
* maximum writing area: 200x200 mm<sup>2</sup>
*Small pieces: 3 mm x 3 mm with optical autofocus
* 200 mm wafer
*50 mm wafers
* 150 mm wafer
*100 mm wafers
* 100 mm wafer
*150 mm wafers
* 50 mm wafer
*200 mm wafers
* pieces down to 3x3 mm<sup>2</sup> <sup>1)</sup>
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
|  
All cleanroom materials
*All cleanroom allowed materials
<br>Total height variation across the substrate must be less than ±90 µm - including wafer bow
*Total height variation across the substrate must be less than ±90 µm - including wafer bow
|-
|-
|style="background:LightGrey; color:black"|Batch
! scope=row style="text-align: left;" | Substrate batch
|style="background:WhiteSmoke; color:black" colspan="2"|
| 1
1  
|-
|}
|}


<sup>1)</sup> with optical autofocus
=[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing|Process information]]=
<br clear="all" />
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Process_Parameters|Process Parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Features|Features]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Alignment|Alignment]]
 
==Exposure dose==
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners#Aligner:_Maskless_02|Information on UV exposure dose]]
 
==Alignment mark design and locations==
[[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|Alignment mark design and locations]].
 
==Quality Control (QC)==
The purpose of the QC process is to check the optical performance and alignment accuracy of the maskless aligners. The optical performance is checked by making a dose/defocus test. The alignment accuracy is checked by making a global alignment test for both topside alignment and back side alignment.
 
'''Dose/defoc limit:'''<br>
Deviations in the optical performance are not easily corrected, and is likely due to contaminated or damaged writehead. If either the dose or defoc changes, the tool is investigated for writehead contamination and/or damage.
 
'''Alignment accuracy accept limit:'''<br>
Must be within machine specifications, and should be adjusted if necessary. The top side alignment accuracy for MLA2 is ±0.5 µm. The backside alignment accuracy for MLA2 is ±1 µm.
 
'''Documentation:'''<br>
*[https://labmanager.dtu.dk/d4mb/show.php?dokId=11637&mach=440 The QC procedure for Aligner: MLA2] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=440 The newest QC data for Aligner: MLA2] - '''requires login'''

Latest revision as of 12:04, 3 September 2026

Aligner: Maskless 02

Aligner: Maskless 02 is located in E-5.

Tool description
The MLA2 is a UV exposure tool, which can be used for direct writing of digital mask designs, on photosensitive resists on chips, 50 mm, 100 mm, 150 mm and 200 mm substrates.

Product: Heidelberg Instruments MLA150 WM I Maskless Aligner
Year of purchase: 2018
Tool modification: Modified from WM1 to WM2 in 2023
Location: Cleanroom E-5

Features

  • Optical Autofocus (enables chips down to 3 x 3 mm)
  • Pneumatic Autofocus
  • Top side Alignment
  • Back side Alignment
  • Gray Scale Exposure (no alignment)
  • Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
  • High Aspect Ratio Mode for exposure of thick resists (available but not correctly adjusted)
  • 200 x 200 mm exposure field

User manual
The user manual and contact information can be found in LabManager - requires login

Tool training
Training on the tool requires users to complete the lithography TPT followed by the online tool training and a hands-on authorization training.

Equipment performance and process related parameters

Purpose Alignment and UV exposure
Exposure modes Projection
Exposure light/filters 375 nm (laser diode array)
Dynamic focusing method
  • Optical
  • Pneumatic
Minimum resolution ~1 µm
Design file formats
  • GDS-II
  • CIF
  • DXF
  • Gerber
  • HIMT format
Alignment modes
  • Top side (TSA): ±0.5 µm
  • Back side (TSA): ±1 µm
  • Advanced field alignment (chip-by-chip TSA): ±0.25 µm
Substrate size
  • Maximum writing area: 200 mm x 200 mm
  • Small pieces: 3 mm x 3 mm with optical autofocus
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers
Allowed materials
  • All cleanroom allowed materials
  • Total height variation across the substrate must be less than ±90 µm - including wafer bow
Substrate batch 1

Process information

Exposure dose

Information on UV exposure dose

Alignment mark design and locations

Alignment mark design and locations.

Quality Control (QC)

The purpose of the QC process is to check the optical performance and alignment accuracy of the maskless aligners. The optical performance is checked by making a dose/defocus test. The alignment accuracy is checked by making a global alignment test for both topside alignment and back side alignment.

Dose/defoc limit:
Deviations in the optical performance are not easily corrected, and is likely due to contaminated or damaged writehead. If either the dose or defoc changes, the tool is investigated for writehead contamination and/or damage.

Alignment accuracy accept limit:
Must be within machine specifications, and should be adjusted if necessary. The top side alignment accuracy for MLA2 is ±0.5 µm. The backside alignment accuracy for MLA2 is ±1 µm.

Documentation:

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA2&oldid=56457"