Specific Process Knowledge/Lithography/Coaters/GammaEbeam: Difference between revisions
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[[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|right|thumb|Spin Coater: Gamma E-beam & UV in E-5]] | [[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|right|thumb|Spin Coater: Gamma E-beam & UV in E-5]] | ||
Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles | Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles 100 mm and 150 mm wafers using two separate coater stations. It can be reconfigured to enable coating 2" substrates on Coater1, but this requires a tool change. | ||
Coater1 is equipped with 2 resist lines, as well as 1 syringe line: | |||
*AR-P 6200.09 (CSAR) | *AR-P 6200.09 (CSAR) | ||
*ZEP 520A diluted 1:2 | |||
*Syringe, which can be used for various resists (anisole-based or PGMEA-based). ''We currently recommend against using the syringe, as the process setup is quite demanding. Use a manual spin coater instead.'' | *Syringe, which can be used for various resists (anisole-based or PGMEA-based). ''We currently recommend against using the syringe, as the process setup is quite demanding. Use a manual spin coater instead.'' | ||
Coater2 is equipped with 4 different resists lines: | |||
*AZ 5214E | *AZ 5214E | ||
*AZ MiR 701 | *AZ MiR 701 | ||
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*[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma E-beam and UV processing#General_Process_Information|General Process information]] | *[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma E-beam and UV processing#General_Process_Information|General Process information]] | ||
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Quality_Control_(QC)|Quality Control (QC)]] | *[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Quality_Control_(QC)|Quality Control (QC)]] | ||
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Standard_Processes|Standard Processes | *[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Standard_Processes|Standard Processes]] | ||
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Syringe_Processes|Syringe Processes]] | *[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Syringe_Processes|Syringe Processes]] | ||
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|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* AR-P 6200.09 (CSAR) | * AR-P 6200.09 (CSAR) | ||
* ZEP 520A diluted 1:2 (pay-per-use) | |||
* AZ 5214E | * AZ 5214E | ||
* AZ MiR 701 (29cps) | * AZ MiR 701 (29cps) | ||
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|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* AR-P 6200.09 (CSAR): 170-500 nm | * AR-P 6200.09 (CSAR): 170-500 nm | ||
* ZEP 520A diluted 1:2: 55-120 nm | |||
* AZ 5214E: 1.5-5 µm | * AZ 5214E: 1.5-5 µm | ||
* AZ MiR 701: 1.5-4 µm | * AZ MiR 701: 1.5-4 µm | ||
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|style="background:LightGrey; color:black"|Substrate size | |style="background:LightGrey; color:black"|Substrate size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* 50 mm wafers | * 50 mm wafers (requires tool change) | ||
* 100 mm wafers | * 100 mm wafers | ||
* 150 mm wafers | * 150 mm wafers | ||