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[[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|right|thumb|Spin Coater: Gamma E-beam & UV in E-5]]
[[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|right|thumb|Spin Coater: Gamma E-beam & UV in E-5]]


Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles 2", 4", and 6" wafers without size conversion, using two separate coater stations.
Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles 100 mm and 150 mm wafers using two separate coater stations. It can be reconfigured to enable coating 2" substrates on Coater1, but this requires a tool change.


The 2" coater station is equipped with 1 resist line, as well as 1 syringe line:
Coater1 is equipped with 2 resist lines, as well as 1 syringe line:
*AR-P 6200.09 (CSAR)
*AR-P 6200.09 (CSAR)
*Syringe, which can be used for various resists (anisole-based or PGMEA-based).
*ZEP 520A diluted 1:2
*Syringe, which can be used for various resists (anisole-based or PGMEA-based). ''We currently recommend against using the syringe, as the process setup is quite demanding. Use a manual spin coater instead.''


The 4"/6" coater station is equipped with 4 different resists lines:  
 
Coater2 is equipped with 4 different resists lines:  
*AZ 5214E
*AZ 5214E
*AZ MiR 701
*AZ MiR 701
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*AZ 4562   
*AZ 4562   


The processes that are available on the system are developed by Nanolab. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and would as a starting point require batches in excess of 20 wafers.
The processes that are available on the system are developed by Nanolab. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and ''requires'' batch processing - it is not for processing a few wafers now and then.
 
Link to information about [[Specific_Process_Knowledge/Pattern_Design#Helpful_information_for_chip_layout|coater chuck size and hotplate pin positions]].


'''[https://www.youtube.com/watch?v=3JhM3rmLVpA Training video]'''
'''[https://www.youtube.com/watch?v=3JhM3rmLVpA Training video]'''
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*[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma E-beam and UV processing#General_Process_Information|General Process information]]
*[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma E-beam and UV processing#General_Process_Information|General Process information]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Quality_Control_(QC)|Quality Control (QC)]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Quality_Control_(QC)|Quality Control (QC)]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Standard_Processes|Standard Processes:]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Standard_Processes|Standard Processes]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Syringe_Processes|Syringe Processes]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Syringe_Processes|Syringe Processes]]


=== Equipment performance and process related parameters ===
=== Equipment performance and process related parameters ===


{| border="2" cellspacing="0" cellpadding="2"  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  


!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AR-P 6200.09 (CSAR)
* AR-P 6200.09 (CSAR)
* ZEP 520A diluted 1:2 (pay-per-use)
* AZ 5214E
* AZ 5214E
* AZ MiR 701 (29cps)
* AZ MiR 701 (29cps)
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AR-P 6200.09 (CSAR): 170-500 nm
* AR-P 6200.09 (CSAR): 170-500 nm
* ZEP 520A diluted 1:2: 55-120 nm
* AZ 5214E: 1.5-5 µm
* AZ 5214E: 1.5-5 µm
* AZ MiR 701: 1.5-4 µm
* AZ MiR 701: 1.5-4 µm
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|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* 50 mm wafers
* 50 mm wafers (requires tool change)
* 100 mm wafers
* 100 mm wafers
* 150 mm wafers
* 150 mm wafers
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| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Silicon, III-V, and glass
  Silicon, III-V, and glass


Resists and crystalbond are not allowed in the HMDS module
  Resists and crystalbond are not allowed in the HMDS module
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:LightGrey; color:black"|Batch
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