Specific Process Knowledge/Lithography/Coaters/GammaEbeam: Difference between revisions

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 [[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|right|thumb|Spin Coater: Gamma E-beam & UV in E-5]]
-Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles 2", 4", and 6" wafers without size conversion, using two separate coater stations.
+Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles 100 mm and 150 mm wafers using two separate coater stations. It can be reconfigured to enable coating 2" substrates on Coater1, but this requires a tool change.
-The 2" coater station is equipped with 1 resist line, as well as 1 syringe line:
+Coater1 is equipped with 2 resist lines, as well as 1 syringe line:
 *AR-P 6200.09 (CSAR)
-*Syringe, which can be used for various resists (anisole-based or PGMEA-based).
+*ZEP 520A diluted 1:2
+*Syringe, which can be used for various resists (anisole-based or PGMEA-based). ''We currently recommend against using the syringe, as the process setup is quite demanding. Use a manual spin coater instead.''
-The 4"/6" coater station is equipped with 4 different resists lines:
+Coater2 is equipped with 4 different resists lines:
 *AZ 5214E
 *AZ MiR 701
@@ Line 15: / Line 17: @@
 *AZ 4562
-The processes that are available on the system are developed by Nanolab. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and would as a starting point require batches in excess of 20 wafers.
+The processes that are available on the system are developed by Nanolab. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and ''requires'' batch processing - it is not for processing a few wafers now and then.
+Link to information about [[Specific_Process_Knowledge/Pattern_Design#Helpful_information_for_chip_layout|coater chuck size and hotplate pin positions]].
 '''[https://www.youtube.com/watch?v=3JhM3rmLVpA Training video]'''
-'''The user manual, quality control procedures and results, user APVs, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=417 LabManager]'''
+The user manual, quality control procedures and results, user APVs, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=417 LabManager] - '''requires login'''
 ===[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma E-beam and UV processing|Process information]]===
 *[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma E-beam and UV processing#General_Process_Information|General Process information]]
-*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Quality_Control(QC)|Quality Control (QC)]]
+*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Quality_Control_(QC)|Quality Control (QC)]]
-*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Standard_Processes|Standard Processes:]]
+*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Standard_Processes|Standard Processes]]
 *[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Syringe_Processes|Syringe Processes]]
 === Equipment performance and process related parameters ===
-{| border="2" cellspacing="0" cellpadding="2"
+{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
 !style="background:silver; color:black;" align="center" width="60"|Purpose
@@ Line 44: / Line 48: @@
 |style="background:WhiteSmoke; color:black"|
 * AR-P 6200.09 (CSAR)
+* ZEP 520A diluted 1:2 (pay-per-use)
 * AZ 5214E
 * AZ MiR 701 (29cps)
@@ Line 52: / Line 57: @@
 |style="background:LightGrey; color:black"|HMDS contact angle
 |style="background:WhiteSmoke; color:black"|
-- 80° (on Silicon)
+&nbsp; 60 - 80° (on Silicon)
 |-
 |style="background:LightGrey; color:black"|Coating thickness
 |style="background:WhiteSmoke; color:black"|
 * AR-P 6200.09 (CSAR): 170-500 nm
+* ZEP 520A diluted 1:2: 55-120 nm
 * AZ 5214E: 1.5-5 µm
 * AZ MiR 701: 1.5-4 µm
@@ Line 64: / Line 70: @@
 |style="background:LightGrey; color:black"|Priming temperature
 |style="background:WhiteSmoke; color:black"|
-°C
+&nbsp; 120 °C
 |-
 |style="background:LightGrey; color:black"|Spin speed
 |style="background:WhiteSmoke; color:black"|
-- 6000 rpm
+&nbsp; 10 - 6000 rpm
 |-
 |style="background:LightGrey; color:black"|Spin acceleration
 |style="background:WhiteSmoke; color:black"|
-- 10000 rpm/s
+&nbsp; 10 - 10000 rpm/s
 |-
 |style="background:LightGrey; color:black"|Hotplate temperature
 |style="background:WhiteSmoke; color:black"|
-- 200 °C
+&nbsp; 25 - 200 °C
 |-
 |style="background:LightGrey; color:black"|Cool plate temperature
 |style="background:WhiteSmoke; color:black"|
-°C
+&nbsp; 21 °C
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
 |style="background:LightGrey; color:black"|Substrate size
 |style="background:WhiteSmoke; color:black"|
-* 50 mm wafers
+* 50 mm wafers (requires tool change)
 * 100 mm wafers
 * 150 mm wafers
@@ Line 91: / Line 97: @@
 | style="background:LightGrey; color:black"|Allowed materials
 |style="background:WhiteSmoke; color:black"|
-Silicon, III-V, and glass
+&nbsp; Silicon, III-V, and glass
-Resists and crystalbond are not allowed in the HMDS module
+&nbsp; Resists and crystalbond are not allowed in the HMDS module
 |-
 |style="background:LightGrey; color:black"|Batch
 |style="background:WhiteSmoke; color:black"|
-- 25
+&nbsp; 1 - 25
 |-
 |}
 <br clear="all" />