Specific Process Knowledge/Lithography/UVExposure/aligner MLA3: Difference between revisions
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=Aligner: Maskless 03= | =Aligner: Maskless 03= | ||
[[File:Aligner MLA 3.jpg|400px|thumb|Aligner: Maskless 03 is located in E-5.]] | [[File:Aligner MLA 3.jpg|400px|thumb|Aligner: Maskless 03 is located in E-5.]] | ||
'''Tool description'''<br> | |||
The MLA3 is a UV exposure tool, which can be used for direct writing of digital mask designs, on photosensitive resists on chips, 50 mm, 100 mm and 150 mm substrates. It is possible to load a 200 mm wafer, but the writable area is only 150 mm x 150 mm. | |||
''' | {| class="wikitable" | ||
* | ! style="text-align:left" | Product: | ||
| style="padding-left: 10px" | Heidelberg Instruments MLA150 WM II Maskless Aligner | |||
|- | |||
! style="text-align:left" | Year of purchase: | |||
| style="padding-left: 10px" | 2019 | |||
|- | |||
! style="text-align:left" | Location: | |||
| style="padding-left: 10px" | Cleanroom E-5 | |||
|} | |||
'''Features''' | |||
*Pneumatic Autofocus | |||
*Top side Alignment | |||
*Back side Alignment | |||
*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate | *Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate | ||
'''User manual'''<br> | |||
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=464 LabManager] - '''requires login''' | |||
''' | '''Tool training'''<br> | ||
Training on the tool requires users to complete the [https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography#Lithography_Tool_Package_Training lithography TPT] followed by the online tool training and a hands-on authorization training.<br> | |||
<br clear="all" /> | |||
= | |||
= | =Equipment performance and process related parameters= | ||
{| | {| class="wikitable" | ||
|- | |- | ||
! scope=row style="text-align: left;" | Purpose | |||
| Alignment and UV exposure | |||
|- | |- | ||
! scope=row style="text-align: left;" | Exposure modes | |||
| Projection | |||
|- | |- | ||
| | ! scope=row style="text-align: left;" | Exposure light/filters | ||
| | | 405 nm (laser diode array) | ||
|- | |- | ||
| | ! scope=row style="text-align: left;" | Dynamic focusing method | ||
| | | Pneumatic | ||
|- | |- | ||
| | ! scope=row style="text-align: left;" | Minimum resolution | ||
| ~1 µm | |||
|- | |- | ||
! scope=row style="text-align: left;" | Design file formats | |||
| | |||
*GDS-II | |||
*CIF | |||
*DXF | |||
*Gerber | |||
*HIMT format | |||
| | |||
| | |||
|- | |- | ||
| | ! scope=row style="text-align: left;" | Alignment modes | ||
| | | | ||
*Top side (TSA): ±0.5 µm | |||
*Back side (TSA): ±1 µm | |||
*Advanced field alignment (chip-by-chip TSA): ±0.25 µm | |||
|- | |- | ||
| | ! scope=row style="text-align: left;" | Substrate size | ||
| | | | ||
*Maximum writing area: 150 mm x 150 mm | |||
*Small pieces: 5 mm x 5 mm | |||
*50 mm wafers | |||
*100 mm wafers | |||
*150 mm wafers | |||
|- | |- | ||
| | ! scope=row style="text-align: left;" | Allowed materials | ||
| | |||
*All cleanroom allowed materials | |||
*Total height variation across the substrate must be less than ±90 µm - including wafer bow | |||
|- | |- | ||
! scope=row style="text-align: left;" | Substrate batch | |||
| 1 | |||
|} | |} | ||
== | =[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing|Process information]]= | ||
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Exposure_technology|Exposure technology]] | |||
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Process_Parameters|Process Parameters]] | |||
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Features|Features]] | |||
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Alignment|Alignment]] | |||
==Exposure dose== | |||
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners#Aligner:_Maskless_03|Information on UV exposure dose]] | |||
==Alignment mark design and locations== | |||
[[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|Alignment mark design and locations]]. | |||
==Quality Control (QC)== | |||
The purpose of the QC process is to check the optical performance and alignment accuracy of the maskless aligners. The optical performance is checked by making a dose/defocus test. The alignment accuracy is checked by making a global alignment test for both topside alignment and back side alignment. | |||
'''Dose/defoc limit:'''<br> | |||
Deviations in the optical performance are not easily corrected, and is likely due to contaminated or damaged writehead. If either the dose or defoc changes, the tool is investigated for writehead contamination and/or damage. | |||
'''Alignment accuracy accept limit:'''<br> | |||
Must be within machine specifications, and should be adjusted if necessary. The top side alignment accuracy for MLA3 is ±0.5 µm. The backside alignment accuracy for MLA3 is ±1 µm. | |||
'''Documentation:'''<br> | |||
*[https://labmanager.dtu.dk/d4mb/show.php?dokId=11637&mach=464 The QC procedure for Aligner: MLA3] - '''requires login'''<br> | |||
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=464 The newest QC data for Aligner: MLA3] - '''requires login''' | |||
* | |||
<br> | |||
Latest revision as of 13:59, 26 June 2026
Aligner: Maskless 03

Tool description
The MLA3 is a UV exposure tool, which can be used for direct writing of digital mask designs, on photosensitive resists on chips, 50 mm, 100 mm and 150 mm substrates. It is possible to load a 200 mm wafer, but the writable area is only 150 mm x 150 mm.
| Product: | Heidelberg Instruments MLA150 WM II Maskless Aligner |
|---|---|
| Year of purchase: | 2019 |
| Location: | Cleanroom E-5 |
Features
- Pneumatic Autofocus
- Top side Alignment
- Back side Alignment
- Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
User manual
The user manual and contact information can be found in LabManager - requires login
Tool training
Training on the tool requires users to complete the lithography TPT followed by the online tool training and a hands-on authorization training.
| Purpose | Alignment and UV exposure |
|---|---|
| Exposure modes | Projection |
| Exposure light/filters | 405 nm (laser diode array) |
| Dynamic focusing method | Pneumatic |
| Minimum resolution | ~1 µm |
| Design file formats |
|
| Alignment modes |
|
| Substrate size |
|
| Allowed materials |
|
| Substrate batch | 1 |
Process information
Exposure dose
Information on UV exposure dose
Alignment mark design and locations
Alignment mark design and locations.
Quality Control (QC)
The purpose of the QC process is to check the optical performance and alignment accuracy of the maskless aligners. The optical performance is checked by making a dose/defocus test. The alignment accuracy is checked by making a global alignment test for both topside alignment and back side alignment.
Dose/defoc limit:
Deviations in the optical performance are not easily corrected, and is likely due to contaminated or damaged writehead. If either the dose or defoc changes, the tool is investigated for writehead contamination and/or damage.
Alignment accuracy accept limit:
Must be within machine specifications, and should be adjusted if necessary. The top side alignment accuracy for MLA3 is ±0.5 µm. The backside alignment accuracy for MLA3 is ±1 µm.
Documentation:
- The QC procedure for Aligner: MLA3 - requires login
- The newest QC data for Aligner: MLA3 - requires login