Specific Process Knowledge/Lithography/UVExposure/aligner MLA1: Difference between revisions
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== Aligner: Maskless 01 | =Aligner: Maskless 01= | ||
[[File:Heidelberg_MLA100.jpg|400px|thumb|Aligner: Maskless 01 is located in E-4.]] | |||
'''Tool description'''<br> | |||
The MLA1 is a UV exposure tool, which can be used for direct writing of digital mask designs, on photosensitive resists on chips, 50 mm and, 100 mm substrates. It is possible to load a 150 mm wafer, but the writable area is only 125 mm x 125 mm. | |||
The | The MLA 100 Maskless Aligner is a direct exposure projection lithography tool. It has a 365 nm UV LED exposure light source, that exposes the patterns directly on photosensitive resists on chips, 50 mm, 100 mm, and 150 mm inch substrates. It uses digital mask files instead of physical shadow masks. The system offers top side alignment with high accuracy. | ||
{| class="wikitable" | |||
! style="text-align:left" | Product: | |||
| style="padding-left: 10px" | Heidelberg Instruments MLA100 Tabletop Maskless Aligner | |||
{| | |||
| | |||
|- | |- | ||
! style="text-align:left" | Year of purchase: | |||
| style="padding-left: 10px" | 2016 | |||
| | |||
|- | |- | ||
! style="text-align:left" | Location: | |||
| style="padding-left: 10px" | Cleanroom E-4 | |||
|} | |} | ||
'''User manual'''<br> | |||
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=422 LabManager] - '''requires login''' | |||
<br/ | |||
'''Tool training'''<br> | |||
Training on the tool requires users to complete the [https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography#Lithography_Tool_Package_Training lithography TPT] followed by the online tool training and a hands-on authorization training.<br> | |||
<br clear="all" /> | |||
=Equipment performance and process related parameters= | |||
{| class="wikitable" | |||
| | |||
|- | |- | ||
! scope=row style="text-align: left;" | Purpose | |||
| Alignment and UV exposure | |||
= | |||
| | |||
Alignment and UV exposure | |||
|- | |- | ||
! scope=row style="text-align: left;" | Exposure modes | |||
!style=" | | Projection | ||
| | |||
Projection | |||
|- | |- | ||
! scope=row style="text-align: left;" | Exposure light/filters | |||
| | | 365 nm (LED), 8 nm FWHM | ||
|- | |- | ||
! scope=row style="text-align: left;" | Dynamic focusing method | |||
| | | Pneumatic | ||
Pneumatic | |||
|- | |- | ||
! scope=row style="text-align: left;" | Minimum resolution | |||
| | | ~1 µm | ||
|- | |- | ||
! scope=row style="text-align: left;" | Design file formats | |||
| | |||
* | *GDS-II | ||
*CIF | *CIF | ||
*DXF | *DXF | ||
| Line 122: | Line 51: | ||
*HIMT format | *HIMT format | ||
|- | |- | ||
! scope=row style="text-align: left;" | Alignment modes | |||
| | |||
Top side | *Top side (TSA): ±2 µm (can be achieved: ±1 µm) | ||
|- | |- | ||
!style=" | ! scope=row style="text-align: left;" | Substrate size | ||
| | |||
*Maximum writing area: 125 mm x 125 mm | |||
* | *Small pieces: 5 mm x 5 mm | ||
* | *50 mm wafers | ||
* | *100 mm wafers | ||
* | *150 mm wafers | ||
* | |||
|- | |- | ||
! scope=row style="text-align: left;" | Allowed materials | |||
| | |||
All cleanroom materials | *All cleanroom allowed materials | ||
*Total height variation across the substrate must be less than ±40 µm - including wafer bow | |||
|- | |- | ||
! scope=row style="text-align: left;" | Substrate batch | |||
| | | 1 | ||
1 | |||
|} | |} | ||
<br | |||
=[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing|Process information]]= | |||
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Exposure_technology|Exposure technology]] | |||
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Process_Parameters|Process parameters]] | |||
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Substrate_positioning|Substrate positioning]] | |||
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Alignment|Alignment]] | |||
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Optimal_use_of_the_maskless_aligner|Optimal use of the maskless aligner]] | |||
==Exposure dose== | |||
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners#Aligner:_Maskless_01|Information on UV exposure dose]] | |||
==Alignment mark design and locations== | |||
[[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|Alignment mark design and locations]]. | |||
==Quality Control (QC)== | |||
The purpose of the QC process is to check the optical performance and alignment accuracy of the maskless aligners. The optical performance is checked by making a dose/defocus test. The alignment accuracy is checked by making a global alignment test for topside alignment. | |||
'''Dose/defoc limit:'''<br> | |||
Deviations in the optical performance are not easily corrected, and is likely due to contaminated or damaged writehead. If either the dose or defoc changes, the tool is investigated for writehead contamination and/or damage. | |||
'''Alignment accuracy accept limit:'''<br> | |||
Must be within machine specifications, and should be adjusted if necessary. The alignment accuracy for MLA1 is ±1 µm. | |||
'''Documentation:'''<br> | |||
*[https://labmanager.dtu.dk/d4mb/show.php?dokId=11637&mach=422 The QC procedure for Aligner: MLA1] - '''requires login'''<br> | |||
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=422 The newest QC data for Aligner: MLA1] - '''requires login''' | |||
Latest revision as of 13:06, 26 June 2026
Aligner: Maskless 01

Tool description
The MLA1 is a UV exposure tool, which can be used for direct writing of digital mask designs, on photosensitive resists on chips, 50 mm and, 100 mm substrates. It is possible to load a 150 mm wafer, but the writable area is only 125 mm x 125 mm.
The MLA 100 Maskless Aligner is a direct exposure projection lithography tool. It has a 365 nm UV LED exposure light source, that exposes the patterns directly on photosensitive resists on chips, 50 mm, 100 mm, and 150 mm inch substrates. It uses digital mask files instead of physical shadow masks. The system offers top side alignment with high accuracy.
| Product: | Heidelberg Instruments MLA100 Tabletop Maskless Aligner |
|---|---|
| Year of purchase: | 2016 |
| Location: | Cleanroom E-4 |
User manual
The user manual and contact information can be found in LabManager - requires login
Tool training
Training on the tool requires users to complete the lithography TPT followed by the online tool training and a hands-on authorization training.
| Purpose | Alignment and UV exposure |
|---|---|
| Exposure modes | Projection |
| Exposure light/filters | 365 nm (LED), 8 nm FWHM |
| Dynamic focusing method | Pneumatic |
| Minimum resolution | ~1 µm |
| Design file formats |
|
| Alignment modes |
|
| Substrate size |
|
| Allowed materials |
|
| Substrate batch | 1 |
Process information
- Exposure technology
- Process parameters
- Substrate positioning
- Alignment
- Optimal use of the maskless aligner
Exposure dose
Information on UV exposure dose
Alignment mark design and locations
Alignment mark design and locations.
Quality Control (QC)
The purpose of the QC process is to check the optical performance and alignment accuracy of the maskless aligners. The optical performance is checked by making a dose/defocus test. The alignment accuracy is checked by making a global alignment test for topside alignment.
Dose/defoc limit:
Deviations in the optical performance are not easily corrected, and is likely due to contaminated or damaged writehead. If either the dose or defoc changes, the tool is investigated for writehead contamination and/or damage.
Alignment accuracy accept limit:
Must be within machine specifications, and should be adjusted if necessary. The alignment accuracy for MLA1 is ±1 µm.
Documentation:
- The QC procedure for Aligner: MLA1 - requires login
- The newest QC data for Aligner: MLA1 - requires login