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==Descum results==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Descum click here]'''


===Plasma asher 1 ===
[[Category: Equipment|Lithography descum]]
[[Category: Lithography|Descum]]


[[image:Descum Results aug 2019.png|right|frame|400x400px| Descum results plasma asher 1]]
__TOC__


 
= Descum Comparison Table =
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
{| class="wikitable"
 
Note: Plasma asher was cold before use
 
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
! colspan="4" | Settings
! colspan="6" | Etched Thickness (nm)
|-
|-
| colspan="4" |
!
! colspan="6" | ashing time (min)
! [[Specific_Process_Knowledge/Lithography/Descum/plasmaAsher03|Plasma Asher 3: Descum]]
|- style="background:LightGrey"
! [[Specific_Process_Knowledge/Lithography/Descum/plasmaAsher04|Plasma Asher 4 (Clean)]]
|| Recipe || O2 flow || N2 flow || Power
! [[Specific_Process_Knowledge/Lithography/Descum/plasmaAsher05|Plasma Asher 5 (Dirty)]]
| 1 || 2 || 5 || 7 || 10 || 10
|-
|-
| 1 || 70 || 70 || 150 || 14,2 || 16,3 || 47,6 || 123,2 || 854,3 || 862,1
! scope=row style="text-align: left;" | Purpose
| Resist descum
|
*Resist stripping
*Resist descum
|
*Resist stripping
*Resist descum
|-
|-
| 2 || 500 || 0 || 200 ||  || 8,1 || 32,9 || 271,1 || 495,6 || 446,2
! scope=row style="text-align: left;" | Method
| Plasma ashing
| Plasma ashing
| Plasma ashing
|-
|-
|}
! scope=row style="text-align: left;" | Process gasses
|}
| O<sub>2</sub> (50 sccm)
 
|
Conny Hjort & Jesper Hanberg
*O<sub>2</sub> (0-500 sccm)
September 2019
*N<sub>2</sub> (0-500 sccm)
 
|
 
*O<sub>2</sub> (0-500 sccm)
 
*N<sub>2</sub> (0-500 sccm)
<br clear="all" />
*CF<sub>4</sub> (0-200 sccm)
 
===Plasma asher 2 ===
[[image:descum_graf.jpg|right|frame|355x355px|Descum results plasma asher 2 - recipe 1]]
 
Descum of AZ  Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.
 
Experiment parameters:
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
| ||O2 flow|| N2 flow || Power
|-  
|'''recipe 1''' || 100 || 100 || 150
|-
|-
|'''recipe 2''' || 500 || 0 || 200
! scope=row style="text-align: left;" | Process power
| 10-100 W (10-100%)
| 150-1000 W
| 150-1000 W
|-
|-
|}
! scope=row style="text-align: left;" | Substrate batch
|}
|
 
*Chips: several
 
*50 mm wafer: several
 
*100 mm wafer: 1
'''recipe 1'''
|
{| {{table}}
*Chips: several
| align="center" |
*50 mm wafer: several
{| border="1" cellspacing="1" cellpadding="2"  align="center"
*100 mm wafer: 1-25
*150 mm wafer: 1-25
|- style="background:LightGrey"
*200 mm wafer: 1-25
|'''Ashing time (min)'''|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20
|
|-  
*Chips: several
|'''Etched Thickness (nm)'''|| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 59,4 || 140,1 || 360,7
*50 mm wafer: several
|-
*100 mm wafer: 1-25
|'''Initial temperature (°C)'''|| 28 || 21 || 31 || 21 || 22 || 28 || 25 || 24 || 21 || 24 || 24 || 22 || 22
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|-
|-
|}
! scope=row style="text-align: left;" | Substrate materials
|
*<span style="color:red">'''No polymer substrates'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}


=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]


[[image:graf_descum-recipe2.png|right|frame|355x355px|Descum results plasma asher 2 - recipe 2]]
'''recipe 2'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1 ||2 ||3 ||4 ||5 ||6 ||7 ||8 ||10 ||12 ||15 ||20
|-
|'''Etched Thickness (nm)'''||8,1 ||9,4 ||16,8 ||55,2 ||44,0 ||47,5 ||42,5 ||55,1 ||85,3 ||122,4 ||184,8 ||305,9
|-
|'''Initial temperature (°C)'''||22 ||21 ||21 ||22 ||22 ||22 ||21 ||21 ||20 ||21 ||21 ||22
|-
|}
|}


<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>


We can observe linear dependance of etched material on time after etching 7 minutes and more (recipe 2).
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
<br clear="all" />

Latest revision as of 10:11, 25 June 2026

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

Feedback to this page: click here

Descum Comparison Table

Plasma Asher 3: Descum Plasma Asher 4 (Clean) Plasma Asher 5 (Dirty)
Purpose Resist descum
  • Resist stripping
  • Resist descum
  • Resist stripping
  • Resist descum
Method Plasma ashing Plasma ashing Plasma ashing
Process gasses O2 (50 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • CF4 (0-200 sccm)
Process power 10-100 W (10-100%) 150-1000 W 150-1000 W
Substrate batch
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
Substrate materials
  • No polymer substrates
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No metals
  • No metal oxides
  • No III-V materials
  • Silicon substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of resists/polymers
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)

Decommisioned tools

Plasma asher 1 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.


Plasma asher 2 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.

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