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Created page with "=Plasma Asher 5= 400px|thumb|Plasma asher 5 in cleanroom E-5.|right Product name: PVA Tepla Gigabatch 380M<br> Year of purchase: 2024 The Plasma Asher 5 can be used for the following processes: *Photoresist stripping *Descumming *Surface cleaning *Removal of organic passivation layers and masks Furthermore plasma processing using CF<sub>4</sub> in plasma asher 5 can be used for: *Etching of glass and ceramic *Etching of SiO<sub>2</sub>, Si<sub>3..."
 
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The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=531 LabManager] - '''requires login'''
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=531 LabManager] - '''requires login'''


===Process Information===
==Process Information==
Plasma asher 5 is identical to plasma asher 4, see resist strip processing for plasma asher 4 [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|here]].
'''Typical stripping parameters'''<br>
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20-30 minutes
*Time (full boat): 90 minutes


 
==Process development sections==
'''Processes specifically only for plasma asher 5:'''<br>
*[[Specific Process Knowledge/Lithography/Strip/plasmaAsher04_processDevelopment|Stripping with plasma asher 4 and plasma asher 5]]
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO<sub>2</sub> etch using Plasma Asher 1]]
*[[Specific Process Knowledge/Lithography/Descum/plasmaAsher05|Descumming with plasma asher 4 and plasma asher 5]]
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 5|Descum using plasma asher 5]]
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |CF<sub>4</sub> etch of SiO<sub>2</sub> in Plasma Asher 1]]
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Latest revision as of 09:55, 25 June 2026

Plasma Asher 5

Plasma asher 5 in cleanroom E-5.

Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024

The Plasma Asher 5 can be used for the following processes:

  • Photoresist stripping
  • Descumming
  • Surface cleaning
  • Removal of organic passivation layers and masks


Furthermore plasma processing using CF4 in plasma asher 5 can be used for:

  • Etching of glass and ceramic
  • Etching of SiO2, Si3N4, Si
  • Removal of polyimide layers


Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.

The user manual, risk assessment, and contact information can be found in LabManager - requires login

Process Information

Typical stripping parameters
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.

  • O2: 100 sccm
  • N2: 100 sccm
  • Pressure (DSC): 1.3 mbar
  • Power: 1000 W
  • Time (single wafer): 20-30 minutes
  • Time (full boat): 90 minutes

Process development sections


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