Specific Process Knowledge/Lithography/Strip/plasmaAsher05: Difference between revisions
Created page with "=Plasma Asher 5= 400px|thumb|Plasma asher 5 in cleanroom E-5.|right Product name: PVA Tepla Gigabatch 380M<br> Year of purchase: 2024 The Plasma Asher 5 can be used for the following processes: *Photoresist stripping *Descumming *Surface cleaning *Removal of organic passivation layers and masks Furthermore plasma processing using CF<sub>4</sub> in plasma asher 5 can be used for: *Etching of glass and ceramic *Etching of SiO<sub>2</sub>, Si<sub>3..." |
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The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=531 LabManager] - '''requires login''' | The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=531 LabManager] - '''requires login''' | ||
==Process Information== | |||
'''Typical stripping parameters'''<br> | |||
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate. | |||
*O<sub>2</sub>: 100 sccm | |||
*N<sub>2</sub>: 100 sccm | |||
*Pressure (DSC): 1.3 mbar | |||
*Power: 1000 W | |||
*Time (single wafer): 20-30 minutes | |||
*Time (full boat): 90 minutes | |||
==Process development sections== | |||
*[[Specific Process Knowledge/Lithography/Strip/plasmaAsher04_processDevelopment|Stripping with plasma asher 4 and plasma asher 5]] | |||
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO<sub>2</sub> | *[[Specific Process Knowledge/Lithography/Descum/plasmaAsher05|Descumming with plasma asher 4 and plasma asher 5]] | ||
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |CF<sub>4</sub> etch of SiO<sub>2</sub> in Plasma Asher 1]] | |||
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