Specific Process Knowledge/Lithography/Mix-and-match: Difference between revisions
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Content and illustration by | Content and illustration by DTU Nanolab unless otherwise noted. | ||
Mix-and-match lithography is a process in which two lithography processes are combined to produce a pattern in a single resist layer. In this way one can for instance combine the high resolution of E-beam lithography with the high speed of UV lithography. Other combinations using DUV are also possible. | Mix-and-match lithography is a process in which two lithography processes are combined to produce a pattern in a single resist layer. In this way one can for instance combine the high resolution of E-beam lithography with the high speed of UV lithography. Other combinations using DUV are also possible. | ||
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==Alignment accuracy== | ==Alignment accuracy== | ||
Alignment accuracy is governed by the precision with which one can determine the center of the faint exposed marks and the inherent alignment accuracy of the MLA system. Typical accuracy is found to be +/- 250 nm in both x and y. | Alignment accuracy is governed by the precision with which one can determine the center of the faint exposed marks and the inherent alignment accuracy of the MLA system. Typical accuracy is found to be +/- 250 nm in both x and y. | ||
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Left and center: Vernier scales for measurement of alignment accuracy. Right: Waveguide where the left side is written by UV and the right side by E-beam. | |||
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=Mix-and-match resists= | =Mix-and-match resists= | ||