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'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure click here]'''
{{cc-nanolab}}


== UV Exposure Comparison Table ==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/UVExposure click here]'''


[[Category: Equipment|Lithography exposure]]
[[Category: Lithography|Exposure]]


{| border="2" cellspacing="0" cellpadding="2"  
__TOC__
 
=UV Exposure Comparison Table=
 
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: MA6-1|Aligner: MA6-1]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|Aligner: MA6-2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 01|Aligner: Maskless 01]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 01|Aligner: Maskless 01]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 02|Aligner: Maskless 02]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 02|Aligner: Maskless 02]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 03|Aligner: Maskless 03]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 04|Aligner: Maskless 04]]</b>
<!--|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>-->


|-
|-
Line 20: Line 29:
*Back Side Alignment
*Back Side Alignment
*UV exposure
*UV exposure
OBS: this tool is in PolyFabLab
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Top Side Alignment
Line 34: Line 44:
*Maskless UV exposure
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Back Side Alignment
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Maskless UV exposure
*Direct laser writing
OBS: this tool is in PolyFabLab
<!--|style="background:WhiteSmoke; color:black"|
*UV exposure
*UV exposure
*DUV exposure
*DUV exposure-->


|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Performance
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1.5µm down to 1µm
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
<!--|style="background:WhiteSmoke; color:black"|-->
 
|-
|style="background:LightGrey; color:black"|Alignment accuracy
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1.5µm down to 0.5µm
*TSA: ±2 µm
*BSA: ±5 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*2µm down to 1µm
*TSA: ±1 µm
*BSA: ±2 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1µm down to 0.6µm
±2 µm<br>(±1 µm possible)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*TSA: ± 0.5 µm
*BSA: ± 1 µm
|style="background:WhiteSmoke; color:black"|
*TSA: ± 0.5 µm
*BSA: ± 1 µm
|style="background:WhiteSmoke; color:black"|
±1 µm
<!--|style="background:WhiteSmoke; color:black"|-->
|-
|-
|style="background:LightGrey; color:black"|Exposure light/filters/spectrum
|style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*350W Hg lamp
*350W Hg lamp
*i-line filter (365nm notch filter), intensity in Constant Intensity mode: 8mW/cm<sup>2</sup> @ 365nm
*i-line filter (365nm bandpass filter)
*303nm filter optional
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*500W Hg-Xe lamp
*500W Hg-Xe lamp
*i-line filter (365nm notch filter), intensity in Constant Intensity mode: 11mW/cm<sup>2</sup> @ 365nm
*i-line filter (365nm bandpass filter)
*UV350 optics optional
*UV250 optics optional
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*365nm LED
365nm LED
|style="background:WhiteSmoke; color:black"|
375nm laser diode array
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*375nm laserdiodes
405nm laser diode array
or
*405nm laserdiodes
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*365nm LED
*405nm laser diode
<!--|style="background:WhiteSmoke; color:black"|
*1000 W Hg-Xe lamp
*1000 W Hg-Xe lamp
*near UV (350-450nm), mid UV (260-320nm), and deep UV (220-260nm)
*Dichroic mirror:
**Near UV (350-450nm)
**Mid UV (260-320nm)
**Deep UV (220-260nm)-->


|-
|-
|style="background:LightGrey; color:black"|Exposure mode
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
*Flood exposure
*Proximity
*Contact:
**Soft contact
**Hard contact
**Vacuum contact
|style="background:WhiteSmoke; color:black"|
*Flood exposure
*Proximity
*Contact:
**Soft contact
**Hard contact
**Vacuum contact
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
*Projection:
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Projection  
*Projection:
**Optical auto-focus
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Projection  
*Projection:
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Projection:
**Optical auto-focus
**Pneumatic auto-focus
*Direct laser writing:
**Optical auto-focus
**Pneumatic auto-focus
<!--|style="background:WhiteSmoke; color:black"|
*Flood exposure
*Flood exposure
*Proximity exposure with home-made chuck and maskholder
*Proximity exposure with home-made chuck and maskholder
*Inclined exposure
*Rotating exposure-->


|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 100 mm wafer
|style="background:WhiteSmoke; color:black"|
*1 small sample, down to 10x10 mm<sup>2</sup>
*1 50 mm wafer
*1 50 mm wafer
*1 100 mm wafer
*1 100 mm wafer
*1 150 mm wafer
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 small sample, down to 5x5 mm<sup>2</sup>
*1 50 mm wafer
*1 100 mm wafer
*1 150 mm wafer (exposure area only 125x125 mm<sup>2</sup>)
|style="background:WhiteSmoke; color:black"|
*1 small sample, down to 3x3 mm<sup>2</sup>
*1 50 mm wafer
*1 50 mm wafer
*1 100 mm wafer
*1 100 mm wafer
*1 150 mm wafer
*1 150 mm wafer
*1 200 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 small sample, down to 5x5 mm<sup>2</sup>
*1 small sample, down to 5x5 mm<sup>2</sup>
Line 107: Line 187:
*1 100 mm wafer
*1 100 mm wafer
*1 150 mm wafer
*1 150 mm wafer
*1 200 mm wafer
<!--|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*all sizes up to 8inch-->
*all sizes up to 8inch
 
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials except copper and steel
*All PolyFabLab materials
*Dedicated 2inch chuck for III-V materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials except copper and steel
*All cleanroom materials except copper and steel
Line 124: Line 203:
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials
*All cleanroom materials
|style="background:WhiteSmoke; color:black"|
*All PolyFabLab materials
<!--|style="background:WhiteSmoke; color:black"|
*All cleanroom materials-->
|-  
|-  
|}
|}


<br clear="all" />
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MA6-1}}
 
== KS Aligner ==
[[Image:KSAligner in E-4.jpg|300x300px|thumb|The KS Aligner is placed in E-4]]
 
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner click here]'''
 
SUSS Mask Aligner MA6 is designed for high resolution photolithography.
The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied.
Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.
 
'''Training videos: [http://podcast.llab.dtu.dk/fileadmin/podcasts/2016/DTUDanchip/1.053_Aligner_MA6_part1_operation-720p.mp4 Operation] [http://podcast.llab.dtu.dk/fileadmin/podcasts/2016/DTUDanchip/1.053_Aligner_MA6_part2_aligning-720p.mp4 Alignment]''' (on Aligner: MA6-2, but KS Aligner is the same model)
 
'''The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager].'''
 
===Process information===
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm. Dependent on the spectral sensitivity of the resist, the optimal dose may be increased compared to broadband exposure on the Aligner-6inch.
 
*[[Specific Process Knowledge/Lithography/UVExposure_Dose|Information on UV exposure dose]]
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Alignment and UV exposure
|-
 
!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance
 
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
vacuum contact, hard contact, soft contact, proximity, flood exposure
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*broadband (i-, g-, h-line)
*365 nm (i-line)
*303 nm
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
down to 1.25µm
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*5x5 inch
*7x7 inch
*special holder for 4 x 2" designs on 5x5 inch
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*Top side (TSA)
*Backside (BSA)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* small pieces 1x1cm
* 50 mm wafers
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
All cleanroom materials
 
Dedicated chuck for III-V materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1
|-
|}
 
<br clear="all" />
 
==Aligner: MA6 - 2==
 
[[Image:AlignerMA6-2 in E-4.jpg|300x300px|thumb|The Aligner: MA6 - 2 is placed in E-4]]
 
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2 click here]'''
 
The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography.
The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied.
Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA (video) microscope.
 
The aligner can also be used for bond alignment (for Wafer Bonder 02). Special training is required.


'''Training videos: [http://podcast.llab.dtu.dk/fileadmin/podcasts/2016/DTUDanchip/1.053_Aligner_MA6_part1_operation-720p.mp4 Operation] [http://podcast.llab.dtu.dk/fileadmin/podcasts/2016/DTUDanchip/1.053_Aligner_MA6_part2_aligning-720p.mp4 Alignment]'''
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MA6-2}}


'''The user manual, APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=339 LabManager].'''
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA1}}


===Process information===
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA2}}
The Aligner: MA6 - 2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.
 
*[[Specific Process Knowledge/Lithography/UVExposure_Dose|Information on UV exposure dose]]
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Mask alignment and UV exposure, potentially DUV exposure <sup>1)</sup>
 
Bond alignment
|-


!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA3}}


|style="background:LightGrey; color:black"|Exposure mode
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA4}}
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
vacuum contact, hard contact, soft contact, proximity, flood exposure
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*broadband (i-, g-, h-line)
*365 nm (i-line)
*"UV300" (280-350 nm)
*DUV (240 nm) <sup>1)</sup>
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Typically 1.25 µm, possibly down to 0.8 µm <sup>1)</sup>
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*5x5 inch
*7x7 inch
*special holder for 4 x 2" designs on 5x5 inch
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*Top side (TSA)
*Backside (BSA)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* small pieces 1x1cm
* 50 mm wafers
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
All cleanroom materials except copper and steel


Dedicated chuck for III-V materials
=Decommisioned tools=
|-
<span style="color:red">Inclined UV lamp was decommissioned 2023.</span>
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1
|-
|}
 
<sup>1)</sup> Not available yet.
 
<br clear="all" />
 
== Aligner: Maskless 01 ==
 
'''Feedback to this section''': '''[mailto:lithography@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_01 click here]'''
 
[[Image:Heidelberg_MLA100.jpg|300x300px|thumb|Aligner: Maskless 01 positioned in E-5]]
 
The MLA 100 Maskless Aligner located in the E-5 cleanroom is a direct exposure lithography tool.
It is a UV LED exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of the mask.
The system offers top side alignment with high accuracy.
 
'''The user manual and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=422 LabManager]
 
===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing|Process information]]===
 
[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Exposure_technology|Exposure technology]]
 
[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Process_Parameters|Process parameters]]
 
[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Substrate_positioning|Substrate positioning]]
 
[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Alignment|Alignment]]
 
[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Optimal_use_of_the_maskless_aligner|Optimal use of the maskless aligner]]
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Alignment and UV exposure
|-
 
!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance
 
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Projection
|-
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
365nm (LED), FWHM=8nm
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
down to 3µm
|-
|style="background:LightGrey; color:black"|Design formats
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*'''GDS-II'''
*CIF
*DXF
*Gerber
*HIMT format
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Top side only
 
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* maximum writing area: 125x125 mm<sup>2</sup>
* 150 mm wafer
* 100 mm wafer
* 50 mm wafer
* pieces down to 5x5 mm<sup>2</sup>
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
All cleanroom materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1
|-
|}
 
<br clear="all" />
 
==Aligner: Maskless 02[[Image:section under construction.jpg|70px]]==
'''Feedback to this section''': '''[mailto:lithography@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_02 click here]'''
 
===THIS SECTION IS UNDER CONSTRUCTION===
[[Image:section under construction.jpg|70px]]
 
===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing|Process information]]===
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Alignment and UV exposure
|-
 
!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance
 
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Projection
|-
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
375nm or 405nm (laser diode arrays)
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
down to 600nm
|-
|style="background:LightGrey; color:black"|Design formats
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*'''GDS-II'''
*CIF
*DXF
*Gerber
*HIMT format
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Top side alignment
Backside alignment
Field alignment
 
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* maximum writing area: 200x200 mm<sup>2</sup>
* 200 mm wafer
* 150 mm wafer
* 100 mm wafer
* 50 mm wafer
* pieces down to 3x3 mm<sup>2</sup>
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
All cleanroom materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1
|-
|}
 
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==Inclined UV Lamp==
 
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Inclined_UV_lamp click here]'''
 
[[Image:Inclined UV lamp_1.jpg|300x300px|right|thumb|Inclined UV lamp is placed in E-5]]
 
The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.
 
The tool was purchased in February 2009 from Newport. The exposure lamp has a official name: Oriel Flood Exposure Source, unit 92540. All other parts of equipment: substrate and mask holder with media tank, exhaust box around the tool, timer controller, were designed and build at DTU Danchip workshop.
 
The substrate and mask holder with a media tank was designed as part of Master Thesis of DTU Nanotech, Andres Kristensen group. The exhaust box was made as part of safety and the timer controller was build to control exposure time.
 
The technical specification and the general outline of the equipment can be found in LabManager. 
 
'''The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=259 LabManager].'''
 
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=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
UV exposure
|-
 
!style="background:silver; color:black" align="left" rowspan="5"|Performance
 
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*Flood exposure
*Proximity exposure with mask possible for 4inch substrate
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* Near UV(350-450nm)
* Mid UV (260-320nm)
* Deep UV(220-260nm)
 
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
 
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
5x5inch optinal
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
No alignment possible
 
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Up to 8inch substrates, different shapes
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
All cleanroom materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1
|-
|}


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[[Specific Process Knowledge/Lithography/UVExposure/aligner_inclinedUV|Information about decommissioned tool can be found here.]]
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/UVExposure"