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== UV Exposure Comparison Table ==
{{cc-nanolab}}


'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/UVExposure click here]'''


{| border="2" cellspacing="0" cellpadding="2"  
[[Category: Equipment|Lithography exposure]]
[[Category: Lithography|Exposure]]
 
__TOC__
 
=UV Exposure Comparison Table=
 
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: MA6-1|Aligner: MA6-1]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#EVG Aligner|EVG Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|Aligner: MA6-2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#III-V Aligner|III-V Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 01|Aligner: Maskless 01]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 02|Aligner: Maskless 02]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 03|Aligner: Maskless 03]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 04|Aligner: Maskless 04]]</b>
<!--|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>-->


|-
|-
Line 14: Line 26:
|style="background:LightGrey; color:black"|  
|style="background:LightGrey; color:black"|  
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Spinning and baking of AZ5214E resist
*Top Side Alignment
*Spinning and baking of AZ4562 resist
*Back Side Alignment
*Spinning and baking of e-beam resist
*UV exposure
OBS: this tool is in PolyFabLab
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Spinning and baking of AZ5214E resist
*Top Side Alignment
*Spinning and baking of AZ4562 resist
*Back Side Alignment
*Spinning and baking of SU8 resist
*UV exposure
*(DUV exposure)
*Bond alignment
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*In-line substrate HMDS priming
*Top Side Alignment
*Coating and baking of AZ MiR 701 (29cps) resist
*Maskless UV exposure
*Coating and baking of AZ nLOF 2020 resist
|style="background:WhiteSmoke; color:black"|
*Post-exposure baking at 110°C
*Top Side Alignment
|
*Back Side Alignment
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Back Side Alignment
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Maskless UV exposure
*Direct laser writing
OBS: this tool is in PolyFabLab
<!--|style="background:WhiteSmoke; color:black"|
*UV exposure
*DUV exposure-->


|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Performance
|style="background:LightGrey; color:black"|Substrate handling
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* Cassette-to-cassette
~1 µm
* Edge handling chuck
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* Single substrate
~1 µm
* Non-vacuum chuck for fragile substrates
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* Cassette-to-cassette
~1 µm
|Single substrate
|-
|style="background:LightGrey; color:black"|Permanent media
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AZ5214E resist
~1 µm
* AZ4562 resist
* Acetone for chuck cleaning
* Acetone for drip pan
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AZ5214E resist
~1 µm
* PGMEA for edge bead removal
* Acetone for chuck cleaning
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AZ MiR 701 (29cps) resist
~1 µm
* AZ nLOF 2020 resist
<!--|style="background:WhiteSmoke; color:black"|-->
* PGMEA for backside rinse and edge-bead removal
* PGMEA for spinner bowl cleaning and vapor tip bath
|


|-
|-
|style="background:LightGrey; color:black"|Manual dispense option
|style="background:LightGrey; color:black"|Alignment accuracy
|style="background:WhiteSmoke; color:black"|
*TSA: ±2 µm
*BSA: ±5 µm
|style="background:WhiteSmoke; color:black"|
*TSA: ±1 µm
*BSA: ±2 µm
|style="background:WhiteSmoke; color:black"|
±2 µm<br>(±1 µm possible)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* 2 automatic syringes
*TSA: ± 0.5 µm
*BSA: ± 1 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* yes
*TSA: ± 0.5 µm
* pneumatic dispense for SU8 resist
*BSA: ± 1 µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* no
±1 µm
<!--|style="background:WhiteSmoke; color:black"|-->


|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Exposure light
|style="background:LightGrey; color:black"|Spindle speed
|style="background:WhiteSmoke; color:black"|
*350W Hg lamp
*i-line filter (365nm bandpass filter)
|style="background:WhiteSmoke; color:black"|
*500W Hg-Xe lamp
*i-line filter (365nm bandpass filter)
|style="background:WhiteSmoke; color:black"|
365nm LED
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
375nm laser diode array
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
405nm laser diode array
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*10 - 9990 rpm
*365nm LED
|
*405nm laser diode
<!--|style="background:WhiteSmoke; color:black"|
*1000 W Hg-Xe lamp
*Dichroic mirror:
**Near UV (350-450nm)
**Mid UV (260-320nm)
**Deep UV (220-260nm)-->


*10-5000 rpm
|-
|-
|style="background:LightGrey; color:black"|Parameter 2
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
*Flood exposure
*Proximity
*Contact:
**Soft contact
**Hard contact
**Vacuum contact
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
*Flood exposure
*Proximity
*Contact:
**Soft contact
**Hard contact
**Vacuum contact
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
*Projection:
|
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
*Projection:
**Optical auto-focus
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
*Projection:
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
*Projection:
**Optical auto-focus
**Pneumatic auto-focus
*Direct laser writing:
**Optical auto-focus
**Pneumatic auto-focus
<!--|style="background:WhiteSmoke; color:black"|
*Flood exposure
*Proximity exposure with home-made chuck and maskholder
*Inclined exposure
*Rotating exposure-->


|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<nowiki>24</nowiki> 50 mm wafers
*1 100 mm wafer
*<nowiki>24</nowiki> 100 mm wafers
*<nowiki>24</nowiki> 150 mm wafers
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<nowiki>1</nowiki> 100 mm wafer
*1 small sample, down to 10x10 mm<sup>2</sup>
*<nowiki>1</nowiki> 150 mm wafer  
*1 50 mm wafer
*1 100 mm wafer
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<nowiki>25</nowiki> 100 mm wafers
*1 small sample, down to 5x5 mm<sup>2</sup>
|
*1 50 mm wafer
 
*1 100 mm wafer
* Maximum substrate size: 6"
*1 150 mm wafer (exposure area only 125x125 mm<sup>2</sup>)
* Minimum substrate size: 3*3 mm2
* maximum substrate thickness: 4 mm
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Allowed material 1  
*1 small sample, down to 3x3 mm<sup>2</sup>
*Allowed material 2
*1 50 mm wafer
*1 100 mm wafer
*1 150 mm wafer
*1 200 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Allowed material 1  
*1 small sample, down to 5x5 mm<sup>2</sup>
*Allowed material 2
*1 50 mm wafer
*Allowed material 3
*1 100 mm wafer
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon
*1 small sample, down to 3x3 mm<sup>2</sup>
*Glass
*1 50 mm wafer
|
*1 100 mm wafer
 
*1 150 mm wafer
*III-V compound semiconductors
<!--|style="background:WhiteSmoke; color:black"|
*Si, SiO2, SOI
*all sizes up to 8inch-->
|-  
|}
 
<br clear="all" />
 
== KS Aligner ==
 
[[Image:KSaligner.jpg|300x300px|thumb|The KSaligner MA6 is placed in Cleanroom 3.]]
SUSS Mask Aligner MA6 is designed for high resolution photolithography.
The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied.
Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.
 
'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager]
 
== EVG Aligner ==
 
[[Image:EVG620.jpg|300x300px|thumb|left|Aligner-6inch EVG620 is placed in Cleanroom 13.]]
EVG620 aligner is designed for high resolution photolithography.
The machine can be used for 2, 4 and 6 inch substrates. Cassette-to-cassette handling option is available only for 6inch substrates.
The automatic pattern recognition software is available for the special alignment marks design recommended of EVGroup. Please contact Danchip staff for further information. 
Available exposure mode: proximity, soft, hard and vacuum contact.
Two alignment options are available: top side alignment (TSA) and back side alignment (BSA). IR-light alignment also an option.
 
'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=201 LabManager]
 
== III-V Aligner ==
 
The SÜSS MicroTec MA1006 mask aligner located in the III-V cleanroom is dedicated for processing of III-V compound semiconductors.
 
Specific use of the mask aligner can be found in the standard resist recipes.


[[Image:IMG_3078.jpg|300x300px|thumb|III-V Aligner positioned in III-V cleanroom ]]
{| border="2" cellspacing="0" cellpadding="10"
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="6"|Performance
| style="background:LightGrey; color:black"|Allowed materials
|style="background:LightGrey; color:black"|substrate size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
small pieces 1x1 cm up to 2inch"
*All PolyFabLab materials
|-
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
soft contact, hard contact, proximity, flood exposure
*All cleanroom materials except copper and steel
|-
*Dedicated chuck for III-V materials
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
365 nm, 405 nm
*All cleanroom materials
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
~1µm
*All cleanroom materials
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
5x5inch
*All cleanroom materials
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Top side only
*All PolyFabLab materials
<!--|style="background:WhiteSmoke; color:black"|
*All cleanroom materials-->
|-  
|-  
|}
|}


==Inclined UV lamp==
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MA6-1}}
[[Image:Inclined UV lamp_1.jpg|200×200px|left|thumb|Inclined UV lamp is placed in Cleanroom 13.]]
 
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MA6-2}}
 
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA1}}


The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA2}}


The toll was purchased in February 2009 from Newport company. The exposure lamp has a official name: Oriel Flood Exposure Source, unit 92540. All other parts of equipment: substrate and mask holder with media tank, exhaust box around the tool, timer controller, were designed and build at Danchip workshop.
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA3}}


The substrate and mask holder with a media tank was designed as part of Master Thesis of DTU Nanotech, Andres Kristensen group. The exhaust box was made as part of safety and the timer controller was build to control exposure time.
{{:Specific Process Knowledge/Lithography/UVExposure/aligner_MLA4}}


The technical specification and the general outline of the equipment can be found in LabManager.  
=Decommisioned tools=
<span style="color:red">Inclined UV lamp was decommissioned 2023.</span>


'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
[[Specific Process Knowledge/Lithography/UVExposure/aligner_inclinedUV|Information about decommissioned tool can be found here.]]
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&page_id=169 LabManager]
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/UVExposure"