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[[file:Developer_TMAH_manual_02.jpg|400px|right|thumb|Developer: TMAH Manual 02 is located in E-4.]]
[[file:Developer_TMAH_manual_02.jpg|400px|right|thumb|Developer: TMAH Manual 02 is located in E-4.]]


Developer: TMAH Manual 02 is a manually operated puddle developer for single wafers or chips. The wafers or chips are loaded manually one by one into the developer, but the developer dispense, puddle time, water rinse, and drying is performed automatically.  
'''Tool description'''<br>
The Developer: TMAH manual 02 is a semi-automatic and programmable single substrate developer system, which can be used for development of resists on chips, 50 mm, 100 mm and 150 mm substrates. The development is done using AZ 726 MIF, which is a 2.38% TMAH solution with wetting agent.


The development uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in  water with a small amount of wetting agent).
Single substrates are loaded manually into the tool, but the developer dispense, puddle time, agitation, rinse and drying is controlled by the tool.
 
'''[https://www.youtube.com/watch?v=btinNzYnLnY Training video]'''
 
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=324 LabManager] - '''requires login'''
 
=Process information=
All recipes use the following structure:
#Pressurize the TMAH canister
#Dispense puddle while rotating substrate slowly
#Puddle development with agitation of substrate
#Spin off developer
#Clean substrate and chamber with DI water
#Dry substrate and chamber with nitrogen
 
Multipuddle recipes repeat steps 2-4 for the given number of puddles.
 
 
==Process recipes==
(Updated 2026-01-12, JEHEM)
*-Rinse-
*1x015s
*1x030s
*1x060s
*1x120s
*2x060s
*5x060s
 
==Agitation==
Testing showed that adding agitation to the puddle step gave better uniformity in the development rate over the entire area of the substrate as well as increased development rate. Tests were performed on under-exposed resist, specifically for showing the difference between the agitation and non-agitation puddle development - the measured results cannot necessarily be transferred directly to a working process, only the vague general behavior of the two process setups; faster/slower development speed and better/worse uniformity across substrate.


{| class="wikitable"
{| class="wikitable"
! style="text-align:left" | Product:
| style="padding-left: 10px" | Laurell EDC-650-HZB-23NP
|-
|-
! !! Non-agitation !! Agitation
! style="text-align:left" | Year of purchase:   
| style="padding-left: 10px" | 2016
|-
|-
! scope=row style="text-align: left;" | Test results
! style="text-align:left" | Tool modification:  
|
| style="padding-left: 10px" | Modified from e-beam solvent developer to UV TMAH developer in 2024
*Slower development
*Higher non-uniformity
|
*Faster development
*Better uniformity
|-
! scope=row style="text-align: left;" | Normalized development rate
| 1 || 1.20
|-
! scope=row style="text-align: left;" | Non-uniformity
| 21% || 11%
|-
! scope=row style="text-align: left;" | Substrate
| colspan="2"|100 mm SSP silicon
|-
! scope=row style="text-align: left;" | Resist
| colspan="2"|AZ 5214E
|-
! scope=row style="text-align: left;" | Exposure dose
| colspan="2"|50 mJ/cm<sup>2</sup> (~50% of normal dose)
|-
|-
! scope=row style="text-align: left;" | Development
! style="text-align:left" | Location:
| colspan="2"|Single puddle for 60 seconds
| style="padding-left: 10px" | Cleanroom E-4
|-
! scope=row style="text-align: left;" | Developer
| colspan="2"|AZ 726 MIF (2.38% TMAH)
|}
|}
'''User manual'''<br>
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=341 LabManager] - '''requires login'''
'''Tool training'''<br>
Training on the tool requires users to complete the [https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography#Lithography_Tool_Package_Training lithography TPT] followed by the online tool training and a hands-on authorization training.<br>
The tool training video is part of the online tool training, but can also be viewed [https://www.youtube.com/watch?v=btinNzYnLnY here].
<br clear="all" />
<br clear="all" />
<gallery style="text-align: center;" widths=450 heights=350>
ManualTMAHdeveloper developRate v1.png|Development rate for under-exposed resist test
ManualTMAHdeveloper uniformity v1.png|Non-uniformity for under-exposed resist test
</gallery>


=Equipment performance and process related parameters=
=Equipment performance and process related parameters=
{| class="wikitable"
{| class="wikitable"
|-
|-
Line 91: Line 44:
|-
|-
! scope=row style="text-align: left;" | Developer
! scope=row style="text-align: left;" | Developer
|  
| AZ 726 MIF (2.38% TMAH)
AZ 726 MIF <br>
(2.38% TMAH)
|-
|-
! scope=row style="text-align: left;" | Development method
! scope=row style="text-align: left;" | Development method
Line 128: Line 79:
|}
|}
<br clear="all" />
<br clear="all" />
=Process information=
All recipes use the following structure:
#Pressurize the TMAH canister
#Dispense puddle while rotating substrate slowly
#Puddle development with agitation of substrate
#Spin off developer
#Clean substrate and chamber with DI water
#Dry substrate and chamber with nitrogen
'''Multi puddle'''<br>
Multi puddle recipes repeat steps 2-4 for the given number of puddles.
==Process recipes==
(Updated 2026-01-12, JEHEM)
*-Rinse-
*1x015s
*1x030s
*1x060s
*1x120s
*2x060s
*5x060s
==Agitation==
Testing showed that adding agitation to the puddle step gave better uniformity in the development rate over the entire area of the substrate as well as increased development rate.
Tests were performed on under-exposed resist, specifically for showing the difference between the agitation and non-agitation puddle development - the measured results cannot necessarily be transferred directly to a working process, only the vague general behavior of the two process setups; faster/slower development speed and better/worse uniformity across substrate.
[[file:ManualTMAHdeveloper developRate v1.png|400px|thumb|Development rate for under-exposed resist test]]
[[file:ManualTMAHdeveloper uniformity v1.png|400px|thumb|Non-uniformity for under-exposed resist test]]
{| class="wikitable"
|-
!  !! Non-agitation !! Agitation
|-
! scope=row style="text-align: left;" | Test results
|
*Slower development
*Worse uniformity
|
*Faster development
*Better uniformity
|-
! scope=row style="text-align: left;" | Normalized development rate
| 1 || 1.20
|-
! scope=row style="text-align: left;" | Non-uniformity
| 21% || 11%
|-
! scope=row style="text-align: left;" | Agitation
| None || 15 cycles per minute, 20 rpm, 500 rpm/s
|-
! scope=row style="text-align: left;" | Substrate
| colspan="2"|100 mm SSP silicon
|-
! scope=row style="text-align: left;" | Resist film
| colspan="2"|1.5 µm AZ 5214E
|-
! scope=row style="text-align: left;" | Exposure dose
| colspan="2"|50 mJ/cm<sup>2</sup> (~50% of normal dose)
|-
! scope=row style="text-align: left;" | Development
| colspan="2"|Single puddle for 60 seconds
|-
! scope=row style="text-align: left;" | Developer
| colspan="2"|AZ 726 MIF (2.38% TMAH)
|}
<br clear="all"/>

Revision as of 09:52, 14 January 2026

Developer: TMAH Manual 02

Developer: TMAH Manual 02 is located in E-4.

Tool description
The Developer: TMAH manual 02 is a semi-automatic and programmable single substrate developer system, which can be used for development of resists on chips, 50 mm, 100 mm and 150 mm substrates. The development is done using AZ 726 MIF, which is a 2.38% TMAH solution with wetting agent.

Single substrates are loaded manually into the tool, but the developer dispense, puddle time, agitation, rinse and drying is controlled by the tool.

Product: Laurell EDC-650-HZB-23NP
Year of purchase: 2016
Tool modification: Modified from e-beam solvent developer to UV TMAH developer in 2024
Location: Cleanroom E-4

User manual
The user manual and contact information can be found in LabManager - requires login

Tool training
Training on the tool requires users to complete the lithography TPT followed by the online tool training and a hands-on authorization training.
The tool training video is part of the online tool training, but can also be viewed here.

Equipment performance and process related parameters

Tool purpose

Development of UV resists:

  • AZ nLOF 2020
  • AZ MIR 701
  • AZ 5214E
  • AZ 4562

Development of DUV resists:

  • KrF M230Y
  • KrF M35G
Developer AZ 726 MIF (2.38% TMAH)
Development method Puddle
Handling method
  • Non-vacuum chuck for 100 mm & 150 mm wafers
  • Non-vacuum chuck for chips and 50 mm wafers
Process temperature Room temperature
Process agitaion 15 cycles per minute
Process rinse DI water
Substrate sizes
  • Chips
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Substrate materials
  • All cleanroom allowed materials
  • Film, or pattern, of all materials except Type IV
Substrate batch size 1



Process information

All recipes use the following structure:

  1. Pressurize the TMAH canister
  2. Dispense puddle while rotating substrate slowly
  3. Puddle development with agitation of substrate
  4. Spin off developer
  5. Clean substrate and chamber with DI water
  6. Dry substrate and chamber with nitrogen


Multi puddle
Multi puddle recipes repeat steps 2-4 for the given number of puddles.

Process recipes

(Updated 2026-01-12, JEHEM)

  • -Rinse-
  • 1x015s
  • 1x030s
  • 1x060s
  • 1x120s
  • 2x060s
  • 5x060s

Agitation

Testing showed that adding agitation to the puddle step gave better uniformity in the development rate over the entire area of the substrate as well as increased development rate.

Tests were performed on under-exposed resist, specifically for showing the difference between the agitation and non-agitation puddle development - the measured results cannot necessarily be transferred directly to a working process, only the vague general behavior of the two process setups; faster/slower development speed and better/worse uniformity across substrate.

Development rate for under-exposed resist test
Non-uniformity for under-exposed resist test
Non-agitation Agitation
Test results
  • Slower development
  • Worse uniformity
  • Faster development
  • Better uniformity
Normalized development rate 1 1.20
Non-uniformity 21% 11%
Agitation None 15 cycles per minute, 20 rpm, 500 rpm/s
Substrate 100 mm SSP silicon
Resist film 1.5 µm AZ 5214E
Exposure dose 50 mJ/cm2 (~50% of normal dose)
Development Single puddle for 60 seconds
Developer AZ 726 MIF (2.38% TMAH)


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