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__TOC__
__TOC__


=Plasma Asher 1=
= Descum Comparison Table =
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
 
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]
 
=Plasma Asher 2=
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
 
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
 
=Plasma Asher 3: Descum=
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
 
Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time.
The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).
 
 
'''Ashing of  AZ MiR701 resist:'''<br>
You can use two different descum process developments: you can either change power settings or processing chamber pressure.
 
 
'''Testing different power settings:'''
[[image:AZMIR701_power_settings.png|400px|thumb|Descum results for different power settings]]
 
'''Recipe settings:'''
*O2 flow: 5 sccm
*N2 flow: 0
*Pressure: 0.2 mbar
*Power: Varied
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Power
|-
|'''recipe 1''' || 50/0 || 52/31 || 50%
|-
|'''recipe 2''' || 100/0 || 53/31 || 100%
|-
|'''recipe 3''' || 20/0 || 51/34 || 20%
|-
|}
|}
<br clear="all" />
 
 
'''Testing different pressure settings:'''
[[image:AZMIR701_pressure_settings.png|400px|thumb|Descum results for different pressure settings]]
 
'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 5 || 0,2
|-
|'''recipe 2''' || 100/0 || 37/38 || 45 || 0,8
|-
|}
|}
<br clear="all" />
 
'''Ashing of AZ5214E resist:'''
[[image:AZ5214E_pressure_settings.png|400px|thumb|Descum results for different pressure settings]]
 
 
'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 17 || 0,4
|-
|'''recipe 2''' || 100/0 || 37/39 || 45 || 0,8
|-
|}
|}
<br clear="all" />
 
=Plasma Asher 4=
==Descum processing in plasma asher 4 & 5==
Descum of AZ 5214E on 100 mm wafers. The descum process was tested for single substrates, as well as 3 substrates, placed vertically in the glass boat. For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers.<br>
 
When running multiple wafers, the first and last wafers should always be dummy wafers.
 
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''
 
'''Typical descum parameters'''
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 200 W
*Chamber temperature at start: 30°C
*Time (single wafer): 5-10 minutes = 35-72 nm ashed
*Time (multiple wafers): 10-15 minutes = 40-80 nm ashed
 
{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Center of 3 substrates
!
|-
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
! scope=row| Test results
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher 4|Plasma Asher 4 (Clean)]]
| Ashing rate: 5.7 ±2.1 nm/min<br>Non-uniformity: 0.6 ±0.4% || Ashing rate: 3.8 ±1.6 nm/min<br>Non-uniformity: 0.4 ±0.2%
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
|-
|-
! scope=row| Wafers
! scope=row style="text-align: left;" | Purpose
| 1 || 3
| Resist descum
|
*Resist stripping
*Resist descum
|
*Resist stripping
*Resist descum
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Method
| 100 mm || 100 mm
| Plasma ashing
| Plasma ashing
| Plasma ashing
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Process gasses
| Center of chamber || Center of chamber
| O<sub>2</sub> (50 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*CF<sub>4</sub> (0-200 sccm)
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Process power
| Center of boat || Center of boat
| 10-100 W (10-100%)
| 150-1000 W
| 150-1000 W
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Substrate batch
| 200 sccm || 200 sccm
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Substrate materials
| 50% N<sub>2</sub> || 50% N<sub>2</sub>
|
|-
*<span style="color:red">'''No polymer substrates'''</span><br>
! scope=row| Chamber pressure
*Silicon substrates
| 1.3 mbar || 1.3 mbar
*III-V substrates
|-
*Glass substrates
! scope=row| Power
*Films, or patterned films, of any material except type IV (Pb, Te)
| 200 W || 200 W
|
|-
*<span style="color:red">'''No metals'''</span><br>
! scope=row| Test processing time
*<span style="color:red">'''No metal oxides'''</span><br>
| Tested parameter || Tested parameter
*<span style="color:red">'''No III-V materials'''</span><br>
|-
*Silicon substrates
! scope=row| Test average temperature
*Glass substrates
| 33°C || 33°C
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
<br clear="all" />
<hr>


{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher03}}


[[File:PA_descum_single_v3.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]]
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher04}}
'''Single wafer ashing rate'''<br>
{| class="wikitable"
|-
! Ashing time [min]: !! 1 !! 2 !! 5 !! 10 !! 15
|-
| Ashing amount [nm]: || 5.2 || 6.2 || 35.1 || 72.3 || 87.1
|-
| Ashing rate [nm/min]: || 5.2 || 3.1 || 7.0 || 7.2 || 5.8
|}


{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher05}}


'''Single wafer non-uniformity'''<br>
=Decommisioned tools=
{| class="wikitable"
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
|-
! Ashing time [min]: !! 1 !! 2 !! 5 !! 10 !! 15
|-
| Film thickness range, before descum [nm]: || 11 || 12 || 10 || 11 || 9
|-
| Pre-ashing non-uniformity [%]: || 0.37 || 0.40 || 0.33 || 0.37 || 0.30
|-
| Film thickness range, after descum [nm]: || 10 || 10 || 12 || 19 || 33
|-
| Post-ashing non-uniformity [%]: || 0.33 || 0.33 || 0.41 || 0.66 || 1.18
|}


<br clear="all" />
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]
<hr>




[[File:PA_descum_multi_v3.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]]
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
'''Multi wafer ashing rate'''<br>
{| class="wikitable"
|-
! Ashing time [min]: !! 1 !! 2 !! 5 !! 10 !! 15
|-
| Ashing amount [nm]: || 4.3 || 6.7 || 10.1 || 39.5 || 78.8
|-
| Ashing rate [nm/min]: || 4.3 || 3.4 || 2.0 || 4.0 || 5.3
|}
 
 
'''Multi wafer non-uniformity'''<br>
{| class="wikitable"
|-
! Ashing time [min]: !! 1 !! 2 !! 5 !! 10 !! 15
|-
| Film thickness range, before descum [nm]: || 11 || 13 || 11 || 12 || 14
|-
| Pre-ashing non-uniformity [%]: || 0.37 || 0.43 || 0.37 || 0.40 || 0.46
|-
| Film thickness range, after descum [nm]: || 11 || 9 || 10 || 12 || 21
|-
| Post-ashing non-uniformity [%]: || 0.37 || 0.30 || 0.33 || 0.41 || 0.74
|}


[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
<br clear="all" />
<br clear="all" />
<hr>
'''Comparison between single substrate processing and multi substrate processing'''<br>
Processing a single substrate using the standard descum settings will provide users with a relatively controllable and uniform process. Adding dummy substrates in close proximity with the process substrate will reduce the ashing rate and improve the uniformity:
<gallery mode="packed-hover" heights="150">
PA_descum_compareAmount_v1.png|Ashing amount
PA_descum_compareRate_v1.png|Ashing rate
PA_descum_compareUniformity_v1.png|Non-uniformity
</gallery>
<br clear="all" />
=Plasma Asher 5=
Plasma asher 5 is identical to plasma asher 4, see descum processing for plasma asher 4 [[Specific_Process_Knowledge/Lithography/Descum#Descum_processing_in_plasma_asher_4_&_5|here]].
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