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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development click here]'''
{{cc-nanolab}}


=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Development click here]'''


[[Category: Equipment|Lithography development]]
[[Category: Lithography|Development]]


==Coaters: Comparison Table==
__TOC__
 
{| border="2" cellspacing="0" cellpadding="2"
 
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Development#Developer-1 and Developer-2|Developer 1 and 2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Development#KS Spinner|KS Spinner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Development#Spin Track 1 + 2|Spin Track 1 + 2]]</b>
 
|-
!style="background:silver; width:100px; color:black;" align="center"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Coating and baking of
**AZ5214E resist
**AZ4562 resist
**E-beam resist
|style="background:WhiteSmoke; color:black"|
*Coating and baking of
**AZ5214E resist
**AZ4562 resist
**SU8 resist
|style="background:WhiteSmoke; color:black"|
*In-line substrate HMDS priming
*Coating and baking of
**AZ MiR 701 (29cps) resist
**AZ nLOF 2020 resist
*Post-exposure baking at 110°C


=Development Comparison Table=
{| class="wikitable"
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
!
|style="background:LightGrey; color:black"|Substrate handling
! [[Specific Process Knowledge/Lithography/Development/beaker_developer|Manual beaker development]]
|style="background:WhiteSmoke; color:black"|
! [[Specific_Process_Knowledge/Lithography/Development/SU8_developer|Developer: SU8 (Wet bench)]]
* Cassette-to-cassette
! [[Specific_Process_Knowledge/Lithography/Development/manualEbeam_developer|Developer: E-beam 02]]
* Edge handling chuck
! [[Specific_Process_Knowledge/Lithography/Development/manualTMAH_developer|Developer: TMAH Manual 02]]
|style="background:WhiteSmoke; color:black"|
! [[Specific_Process_Knowledge/Lithography/Development/UV_developer|Developer: TMAH UV-lithography]]
* Single substrate
! [[Specific_Process_Knowledge/Lithography/Development/DUV_developer|Developer: TMAH Stepper]]
* Non-vacuum chuck for fragile substrates
|style="background:WhiteSmoke; color:black"|
* Cassette-to-cassette
|-
|-
|style="background:LightGrey; color:black"|Permanent media
! scope=row style="text-align: left;" | Purpose
|style="background:WhiteSmoke; color:black"|
|
* AZ5214E resist
Fall-back option if you have a process, which is not compatible with the automatic, or semi-automatic, tools
* AZ4562 resist
* Acetone for chuck cleaning
* Acetone for drip pan
|style="background:WhiteSmoke; color:black"|
* AZ5214E resist
* PGMEA for edge bead removal
* Acetone for chuck cleaning
|style="background:WhiteSmoke; color:black"|
* AZ MiR 701 (29cps) resist
* AZ nLOF 2020 resist
* PGMEA for backside rinse and edge-bead removal
* PGMEA for spinner bowl cleaning and vapor tip bath
|-
|style="background:LightGrey; color:black"|Manual dispense option
|style="background:WhiteSmoke; color:black"|
* 2 automatic syringes
|style="background:WhiteSmoke; color:black"|
* yes
* pneumatic dispense for SU8 resist
|style="background:WhiteSmoke; color:black"|
* no


<span style="color:red">Requires individual risk assessment for TMAH development!</span>
|
Development of:
*SU-8
|
Development of:
*ZEP 520A
*AR-P 6200.xx (CSAR)
|
Development of:
*AZ nLOF
*AZ MiR 701
*AZ 5214E
*AZ 4562
*DUV resists
|
Development of:
*AZ nLOF
*AZ MiR 701
*AZ 5214E
*AZ 4562
*DUV resists
Post-exposure baking
|
Development of:
*DUV resists
Post-exposure baking
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
! scope=row style="text-align: left;" | Developer
|style="background:LightGrey; color:black"|Spindle speed
| Process dependent
|style="background:WhiteSmoke; color:black"|
| mr-Dev 600 (PGMEA)
*100-5000 rpm
|  
|style="background:WhiteSmoke; color:black"|
*ZED N-50
*100-5000 rpm
*AR 600-50
|style="background:WhiteSmoke; color:black"|
| AZ 726 MIF (2.38% TMAH in water)
*10 - 9990 rpm
| AZ 726 MIF (2.38% TMAH in water)
| AZ 726 MIF (2.38% TMAH in water)
|-
|-
|style="background:LightGrey; color:black"|Gyrset
! scope=row style="text-align: left;" | Method
|style="background:WhiteSmoke; color:black"|
| Submersion
*optinal
| Submersion
|style="background:WhiteSmoke; color:black"|
| Puddle
*optinal
| Puddle
|style="background:WhiteSmoke; color:black"|
| Puddle
*no
| Puddle
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Handling
|style="background:LightGrey; color:black"|Substrate  size
|
|style="background:WhiteSmoke; color:black"|
Manual handling in beakers
*50 mm wafers
*Chip bucket
*100 mm wafers
*Single wafer carrier
*150 mm wafers
*Carrier for up to 5 wafers
|style="background:WhiteSmoke; color:black"|
|
*100 mm wafer
*Chip bucket
*150 mm wafer
*Single wafer carrier
|style="background:WhiteSmoke; color:black"|
*Carrier for up to 6 wafers
*100 mm wafers
|
*150 mm wafers (tool change required)
*Vacuum-free edge-grip chucks for 50 mm, 100 mm & 150 mm, and 200 mm substrates
*Chip chuck for chips & 50 mm substrates
|
*Vacuum-free edge-grip chuck for 100 mm & 150 mm substrates
*Chip chuck for chips & 50 mm substrates
| Vacuum chuck
| Vacuum chuck
|-
|-
|style="background:LightGrey; color:black"|Batch size
! scope=row style="text-align: left;" | Process temperature
|style="background:WhiteSmoke; color:black"|
| Room temperature
*1-24
| Room temperature
|style="background:WhiteSmoke; color:black"|
| Room temperature
*1
| Room temperature
|style="background:WhiteSmoke; color:black"|
| Room temperature
*1-25
| Room temperature
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Process agitation
|style="background:WhiteSmoke; color:black"|
| No agitation allowed
*All cleanroom materials except III-V materials
| Magnetic stirrer
|style="background:WhiteSmoke; color:black"|
| Rotation
*All cleanroom materials except III-V materials
| Rotation
|style="background:WhiteSmoke; color:black"|
| Rotation
*Silicon
| Rotation
*Glass
|-
|}
 
<br clear="all" />
 
==Developer-1 and Developer-2==
[[Image:SSEspinner2.jpg|200 × 200px|thumb|right|Developer-1 and Developer-2 located in C-1]]
 
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development#Developer-1_and_Developer-2 click here]'''
 
Developer-1 and Developer-2
 
'''The user APV, and contact information can be found in LabManager: [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=62 Developer-1] [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=63 Developer-2]'''
 
===Process information===
 
*Before using a one of developer batch's please check the "Litho4_Dev-7up-KOH" logbook to find out when they were used last time. A fresh bath can be reused without problems.
 
*The main rule is the develop from yesterday must be changed.
 
*Substrates rinses with with water for 4-5 min. after developing.
 
*Substrates can been spin-dried or dried with nitrogen gun after the rinse.
 
The standard developing time AZ resist:
*1.5µm resist is 60 sec
*2.2µm resist is 70 sec
*4.2µm resist is 3 min
*10µm resist is 5 min
 
====Procedure for making a new developer====
 
1. 800ml "Developer AZ 351B" is mixed with 4000ml water in a special container in the fume hood.
 
2. Fill the bath with the developer mixture and heat it to 22 °C before use.
 
<br clear="all" />
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Spin coating and soft baking UV sensative resists
*Spin coating and soft baking E-beam resists
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Resist
! scope=row style="text-align: left;" | Process rinse
|style="background:LightGrey; color:black"|
| Process dependent
|style="background:WhiteSmoke; color:black" align="center"|
| IPA
* AZ5214E
| IPA
* AZ4562
| DI water
* E-beam resists
| DI water
| DI water
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
! scope=row style="text-align: left;" | Substrate size
|style="background:LightGrey; color:black"|Coating thickness
|
|style="background:WhiteSmoke; color:black" align="center"|
* Chips
* AZ5214E 1-4,2 µm
* 50 mm wafers
* AZ4526 6,2-25 µm
* 100 mm wafers
* E-beam resits 0,1-1 µm
* 150 mm wafers
|-
|
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
* Chips
|style="background:LightGrey; color:black"|Spin speed
* 50 mm wafers
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* 100 mm wafers
100 - 5000 rpm
* 150 mm wafers
|-
* 200 mm wafers
|style="background:LightGrey; color:black"|Spin acceleration
|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* Chips (5mm to 2")
100 - 10000 rpm/s
|-
|style="background:LightGrey; color:black"|Hotplate temperature
|style="background:WhiteSmoke; color:black" align="center"|
* 90°C for softbaking of AZ5214E resist
* 100°C for softbaking of AZ4562 resist
* 110°C for reverse baking of AZ5214E resits
* 180°C for softbaking of e-beam resits
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* 50 mm wafers
* 50 mm wafers
* 100 mm wafers
* 100 mm wafers
* 150 mm wafers
* 150 mm wafers
* 200 mm wafers
|
* Chips (5mm to 50 mm)
* 100 mm wafers
* 150 mm wafers
|
* 100 mm wafers
* 150 mm wafers
* 200 mm wafers (may require tool change)
|
* 100 mm wafers
* 150 mm wafers
* 200 mm wafers (may require tool change)
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
| All cleanroom approved materials
All cleanroom materials except III-V materials
|
*Silicon and glass substrates
*Film or pattern of all but Type IV
| All cleanroom approved materials
|
*All cleanroom approved materials
*Film or pattern of all types
|
*Silicon and glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*Silicon, III-V, and glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|-
|-
|style="background:LightGrey; color:black"|Batch
! scope=row style="text-align: left;" | Batch size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
| 1 - 5
1 - 24
| 1 - 6
|-  
| 1
| 1
| 1 - 25
| 1 - 25
|}
|}
<br clear="all" />
<br clear="all" />


==Developer-6inch==
<!--
 
! [[Specific Process Knowledge/Lithography/Development/beaker_developer|Manual beaker development]]
[[image:SpinTrack.jpg|300x257px|right|thumb|Spin Track 1 + 2 in C-1]]
! [[Specific_Process_Knowledge/Lithography/Development#Developer: SU8 (Wet Bench)|Developer: SU8 (Wet bench)]]
 
! [[Specific_Process_Knowledge/Lithography/Development#Developer: E-beam 02|Developer: E-beam 02]]
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Developers#Developer-6inch click here]'''
! [[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual 02|Developer: TMAH Manual 02]]
 
! [[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|Developer: TMAH UV-lithography]]
Spin Track 1 + 2 is an SVG 88 series track system from Rite Track. Each track consists of a HMDS priming module, a spin coating module, and a baking module. In fact, the only difference between the two tracks is the resist used in the spin coating module. Spin Track 1 + 2 is capable of handling 150 mm wafers, as well as 100 mm wafers, but is currently set up for 100 mm wafer processing.
! [[Specific_Process_Knowledge/Lithography/Development/DUV_developer#Developer:_TMAH_Stepper|Developer: TMAH Stepper]]
 
-->
The Spin Track 1 + 2 is controlled using the Recipe Manager software via the touchscreen on the arm attached to the lefthand end of the track. Recipes for the individual modules are developed by Danchip and combined into flows. The user selects a flow (specific to track 1 or 2), and the appropriate recipes will be downloaded and executed on the appropriate track. The other track runs an empty process (no wafers needed), and can unfortunately not be used by a second user while the first user is processing.
<!--
 
{{:Specific Process Knowledge/Lithography/Development/beaker_developer}}
'''The user manual, user APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=189 LabManager]'''
 
===Process information===
*[[Specific Process Knowledge/Lithography/Coaters/Spin Track 1 + 2 processing|General Spin Track 1 + 2 process information]]
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Spin Track
|style="background:WhiteSmoke; color:black" align="center"|<b>1</b>
|style="background:WhiteSmoke; color:black" align="center"|<b>2</b>
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*HMDS priming
*Spin coating and soft baking
*Priming, coating, and baking
|style="background:WhiteSmoke; color:black"|
*HMDS priming
*Spin coating and soft baking
*Priming, coating, and baking
*Post-exposure baking
|-
!style="background:silver; color:black;" align="center" width="60"|Resist
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
AZ MiR 701 (29cps)
 
positive tone
|style="background:WhiteSmoke; color:black" align="center"|
AZ nLOF 2020
 
negative tone
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Coating thickness
|style="background:WhiteSmoke; color:black" align="center"|
1 - 3 µm
|style="background:WhiteSmoke; color:black" align="center"|
1 - 4 µm
|-
|style="background:LightGrey; color:black"|HMDS contact angle
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
60° - 90°; standard recipe 82° (on SiO2)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameters
|style="background:LightGrey; color:black"|Spin speed
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
10 - 9990 rpm
|-
|style="background:LightGrey; color:black"|Spin acceleration
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1000 - 50000 rpm/s
|-
|style="background:LightGrey; color:black"|Hotplate temperature
|style="background:WhiteSmoke; color:black" align="center"|
90°C
|style="background:WhiteSmoke; color:black" align="center"|
110°C
|-
|style="background:LightGrey; color:black"|HMDS priming temperature
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
50°C
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
100 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
Silicon and glass wafers
 
Film or pattern of all types
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1 - 25
|-
|}


<br clear="all" />
{{:Specific Process Knowledge/Lithography/Development/SU8_developer}}


==Developer-TMAH==
{{:Specific Process Knowledge/Lithography/Development/manualEbeam_developer}}
[[Image:KSspinner.JPG|300×300px|right|thumb|Developer-TMAH is placed in C-1]]


'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development#Developer-TMAH click here]'''
{{:Specific Process Knowledge/Lithography/Development/manualTMAH_developer}}


Developer-TMAH is a manually operated, single substrate spray-puddle developer. It uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in  water with a small amount of wetting agent).
{{:Specific Process Knowledge/Lithography/Development/UV_developer}}


'''The user manual, user APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=324 LabManager]'''
{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}
-->


<br clear="all" />
=Decommisioned tools=
<span style="color:red">Developer 1 & 2 were decommissioned 2017-01.</span>


=== Equipment performance and process related parameters ===
[[Specific Process Knowledge/Lithography/Development/1and2_developer|Information about decommissioned tool can be found here.]]


{| border="2" cellspacing="0" cellpadding="2"


<span style="color:red">Developer 6 inch was decommissioned 2019-12.</span>


!style="background:silver; color:black;" align="center" width="60"|Purpose
[[Specific Process Knowledge/Lithography/Development/6inch_developer|Information about decommissioned tool can be found here.]]
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Spin coating and soft baking UV sensative resists
*Spin coating SU8 resists
|-
!style="background:silver; color:black;" align="center" width="60"|Resist
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
* AZ5214E permanent line
* AZ4562 manual dispense
* SU8 resists manual dispense
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
|style="background:LightGrey; color:black"|Coating thickness
|style="background:WhiteSmoke; color:black" align="center"|
* AZ5214E 1-4,2 µm
* AZ4526 6,2-10 µm
* SU8 resits 0,1-100 µm
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Spin speed
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
100 - 5000 rpm
|-
|style="background:LightGrey; color:black"|Spin acceleration
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
100 - 5000 rpm/s
|-
|style="background:LightGrey; color:black"|Hotplate temperature
|style="background:WhiteSmoke; color:black" align="center"|
* changeable temperature from 20° to 200°
* SU8 must be bake out on SU8 dedicated hotplates
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* 50 mm wafers
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
All cleanroom materials except III-V materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1
|-
|}
 
<br clear="all" />
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