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Specific Process Knowledge/Lithography/LiftOff: Difference between revisions

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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black" align="center"|<b>[[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]</b>
|style="background:WhiteSmoke; color:black" align="center"|<b>[[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off (wet bench 07)]]</b>
|style="background:WhiteSmoke; color:black" align="center"|<b>[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=370 Fume hood 03: Solvents]</b> - '''requires login'''
|style="background:WhiteSmoke; color:black" align="center"|<b>[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=370 Fume hood 03: Solvents]</b> - '''requires login'''
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|style="background:WhiteSmoke; color:black"|
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NMP (Remover 1165) / Rinse in IPA
Lift-off bath with NMP (Remover 1165)
 
Rinse bath with diluted IPA
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|style="background:WhiteSmoke; color:black"|
User defined
User defined
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=Lift-off at Nanolab=
{{:Specific Process Knowledge/Lithography/LiftOff/liftoff_wetbench07}}
 
==Lift-off wet bench 07==
[[Image:Lift_off.jpg|300x300px|thumb|Lift-off wet bench in D-3]]
 
The user manual, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=384 LabManager] - '''requires login'''
 
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
 
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"; align="center";|'''Lift-off'''
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!style="background:silver; color:black;"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Lift-off of UV or E-beam resist
*Resist strip of wafers with metal
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!style="background:silver; color:black;"|Bath chemical
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*NMP (Remover 1165)
*Rinse in IPA
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!style="background:silver; color:black" valign="center" rowspan="2"|Process parameters
|style="background:LightGrey; color:black"|Process temperature
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Heating of the bath is possible.
 
The heating has been limited to 65°C
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|style="background:LightGrey; color:black"|Ultrasonic agitation
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Continuous or pulsed
 
The power may be varied
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!style="background:silver; color:black" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
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* 100 mm wafers
* 150 mm wafers
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| style="background:LightGrey; color:black"|Allowed materials
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Silicon or glass wafers
 
Film or patterning of all but Type IV (Pb, Te)
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|style="background:LightGrey; color:black"|Batch
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1 - 25
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=== Process information ===
Lift-off is used for lift-off using resists that are soluble in NMP (''N''-Methyl-Pyrrolidone), supplied in the cleanroom as "Remover 1165". Both AZ 5214E and AZ nLOF are soluble in NMP.
 
For information on processing of AZ nLOF, or image reversal of AZ 5214E, see here: [[Specific_Process_Knowledge/Lithography/Resist/UVresist|Resist Overview]].
 
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