Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions

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+{{cc-nanolab}}
 '''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace click here]'''
-[[Category: Equipment |Thermal C3]]
-[[Category: Thermal process|C3]]
+[[index.php?title=Category:Equipment|Thermal C3]]
-[[Category: Furnaces|C3]]
+[[index.php?title=Category:Thermal process|C3]]
+[[index.php?title=Category:Furnaces|C3]]
 ==Anneal-bond furnace (C3)==
-[[Image:C3.JPG|thumb|300x300px|Anneal-bond furnace (C3). Positioned in cleanroom B-1]]
+[[Image:C3.JPG|thumb|300x300px|Anneal-bond furnace (C3). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]
-The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. O2 is used as an oxidant for dry oxidation, and for wet oxidation water vapour is being generated by a bubbler.
+The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. O<sub>2</sub>) is used as an oxidant for dry oxidation, and for wet oxidation water vapour is being generated by a bubbler.
 This furnace is the third tube in the furnace C-stack positioned in cleanroom B-1.
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 '''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=89 Anneal-bond Furnace (C3)]'''
 ==Process knowledge==
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 *Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
-==Overview of the performance of Anneal Bond furnace and some process related parameters==
+==Overview of the performance of the Anneal Bond furnace (C3) and some process related parameters==
 {| border="2" cellspacing="0" cellpadding="2"
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 *Oxidation of Si wafers
 *Annealing of processed wafers, eg. bonded wafers from EVG NIL
-|style="background:WhiteSmoke; color:black"|Oxidation:
+|style="background:WhiteSmoke; color:black"|
-*Dry
+Annealing:
-*Wet: with bubbler (water steam + O<sub>2</sub>)
+*Using N<sub>2</sub>
+Oxidation:
+*Dry oxidation using O<sub>2</sub>
+*Wet oxidation using H<sub>2</sub>O vapour generated by a bubbler
 |-
 !style="background:silver; color:black" align="center"|Performance
-|style="background:LightGrey; color:black"|Film thickness
+|style="background:LightGrey; color:black"|Film thickness and quality
 |style="background:WhiteSmoke; color:black"|
-*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (it takes too long to grow a thicker oxide)
+*Dry oxide:~ 0 nm  to 300 nm (it takes too long to grow thicker dry oxide layers)
-*Wet SiO<sub>2</sub>: 50 Å to ~5 µm (it takes too long to grow a thicker oxide)
+*Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)
+* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/C3 furnace break-down voltage measurement results|Break-down voltage measurement results]]
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
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 |style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
-*1 atm
+*1 atm (no vacuum)
 |-
 |style="background:LightGrey; color:black"|Gas flows
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 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-30 100 mm wafers (or 50 mm wafers) per run
+*1-30 100 mm wafers (or 50 mm wafers)
 |-
 |style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
-*Silicon wafers (new wafers or RCA cleaned wafers)
+*Silicon wafers
-*Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
+*Silicon wafers with layers of silicon oxide or silicon nitride
-*Wafers from the LPCVD furnaces
+*Wafers from the A1, A3, B-stack, C1 and E1 stack furnaces
-*Wafers from PECVD4
+*Wafers and samples from PECVD4
-*Wafers from PECVD3 (without any metal)
+*Wafers and samples from PECVD3 (without any metals)
-*Wafers from Wafer Bonder 02 (assuming they were clean and not have been exposed to any metal when entering the Wafer Bonder 02)
+*Wafers from Wafer Bonder 02
+*Wafers from Wafer Bonder 03 (without any metals). Use new or dedicated/clean teflon sheets in the wafer bonder
 |-
 |}