Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions

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 '''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace click here]'''
+''This page is written by DTU Nanolab  internal''
 [[Category: Equipment |Thermal A1]]
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-==Boron Drive-in + Pre-dep furnace (A1)==
+==Boron Drive-in and Pre-dep furnace (A1)==
-[[Image:A1.JPG|thumb|400x400px|Boron Drive-in and Pre-dep furnace (A1). Positioned in cleanroom B-1]]
+[[Image:A1.JPG|thumb|400x400px|Boron Drive-in and Pre-dep furnace (A1). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]
-The Boron Drive-in + Pre-dep furnace (A1) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Also boron pre-deposition/doping is done furnace. Furthermore, the furnace is used for boron drive-in after the pre-deposition or after boron ion implantation.
+The Boron Drive-in and Pre-dep furnace (A1) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Also boron pre-deposition/doping is done in this furnace. Furthermore, the furnace is used for boron drive-in after the pre-deposition or after boron ion implantation.
 The furnace is mostly used for wet and dry thermal oxidation of silicon wafers. The oxidation recipes are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.
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 ! QC Recipe:
-! Wet1050
+! WET1050
-! Dry1050
+! DRY1050
 |-
 | H<sub>2</sub> flow
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 |-
 |Temperature
-|1050 C
+|1050 <sup>o</sup>C
-|1050 C
+|1050 <sup>o</sup>C
 |-
 |Oxidation time
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 and over the boat)
 |-
-!Dry1050
+!DRY1050
 |107.3 nm - 113.3 nm
 |3.2 %
 |-
-!Wet1050
+!WET1050
 |298.2 nm - 305.5 nm
 |3.7 %
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 |}
-==Overview of the performance of the Boron Drive-in + Pre-dep furnace and some process related parameters==
+==Overview of the performance of the Boron Drive-in and Pre-dep furnace and some process related parameters==
 {| border="2" cellspacing="0" cellpadding="2"
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 !style="background:silver; color:black;" align="center"|Purpose
 |style="background:LightGrey; color:black"|
-*Drive-in of boron
+*Thermal oxidation of Si wafers
-*Oxidation of silicon
+*Boron pre-deposition/doping of Si wafers
 *Oxidation of boron phase layers
-*Annealing of the oxide
+*Driving-in pre-deposited or ion-implanted boron
-*Boron pre-depostion using source wafer
 |style="background:WhiteSmoke; color:black"|
-Annealing:
+Thermal oxidation:
-*Using N<sub>2</sub>
-Oxidation:
 *Dry oxidation using O<sub>2</sub>
-*Wet oxidation using H<sub>2</sub>O generated by a torch
+*Wet oxidation using H<sub>2</sub>O vapour
+Boron pre-deposition/doping:
+*Boron-nitride wafers are used as doping source. This is a solid doping source containing B<sub>2</sub>O<sub>3</sub>
+Driving-in pre-deposited or ion-implanted boron
+*Dry or wet oxidation recipes are normally used for this purpose
 |-
 !style="background:silver; color:black" align="center"|Performance
-|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
+|style="background:LightGrey; color:black"|Film thickness and quality||style="background:WhiteSmoke; color:black"|
-*Dry oxide: 50 Å  to ~2000 Å (it takes too long to grow a thicker oxide)
+*Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide)
-*Wet oxide: 50 Å to ~3 µm (it takes too long to grow a thicker oxide)
+*Wet oxide: ~ 0 nm - 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers)
+* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/A1 furnace break-down voltage measurement results|Break-down voltage measurement results]]
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
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 |style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
-*1 atm
+*1 atm (no vacuum)
 |-
-|style="background:LightGrey; color:black"|Gasses on the system
+|style="background:LightGrey; color:black"|Gases on the system
 |style="background:WhiteSmoke; color:black"|
+*N<sub>2</sub>
-*O<sub>2</sub>, N<sub>2</sub> and H<sub>2</sub>
+*O<sub>2</sub>
+*H<sub>2</sub> (in a torch, H<sub>2</sub> and O<sub>2</sub> burns into H<sub>2</sub>O vapour for wet oxidation)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
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 |style="background:WhiteSmoke; color:black"|
 *Silicon wafers (RCA cleaned)
+*Boron-nitride source wafers for boron pre-deposition/doping
 |-
 |}