Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10 click here]''' | |||
<!--Checked for updates on 30/7-2018 - ok/jmli --> | |||
<!--Checked for updates on 5/10-2020 - ok/jmli --> | |||
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== The nano1.0 recipe == | == The nano1.0 recipe == | ||
{{Template:Author-jmli1}} | |||
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{| border="2" cellpadding="2" cellspacing="1" | {| border="2" cellpadding="2" cellspacing="1" | ||
| Line 45: | Line 51: | ||
</gallery> | </gallery> | ||
{| {{table}} | |||
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width''' | |||
| align="center" style="background:#f0f0f0;"|'''''' | |||
| align="center" style="background:#f0f0f0;"|'''30''' | |||
| align="center" style="background:#f0f0f0;"|'''60''' | |||
| align="center" style="background:#f0f0f0;"|'''90''' | |||
| align="center" style="background:#f0f0f0;"|'''120''' | |||
| align="center" style="background:#f0f0f0;"|'''150''' | |||
| align="center" style="background:#f0f0f0;"|'''Avg''' | |||
| align="center" style="background:#f0f0f0;"|'''Std''' | |||
|- | |||
| Etch rates||nm/min||239||281||306||320||328||295||36 | |||
|- | |||
| Sidewall angle||degs||93||94||93||92||93||93||1 | |||
|- | |||
| CD loss||nm/edge||-1||-5||-11||-9||-32||-11||12 | |||
|- | |||
| CD loss foot||nm/edge||-1||-5||-11||-9||-2||-5||5 | |||
|- | |||
| Bowing||||41||33||29||30||22||31||7 | |||
|- | |||
| Curvature||||-51||-50||-43||-39||-42||-45||5 | |||
|- | |||
| zep||nm/min||||||||||||46|| | |||
|- | |||
| | |||
|} | |||
== Comments == | == Comments == | ||
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|- | |- | ||
| Gas Flow (sccm) | | Gas Flow (sccm) | ||
| SF<sub>6</sub> 38 + C<sub>4</sub>F<sub>8</sub> 70 | | SF<sub>6</sub> 38 + '''C<sub>4</sub>F<sub>8</sub> 70''' | ||
|- | |- | ||
| Pressure (mT) | | Pressure (mT) | ||
| Line 72: | Line 106: | ||
|- | |- | ||
| Coil power (W) | | Coil power (W) | ||
| 450 | | '''450''' | ||
|- | |- | ||
| Matching (Forward/ Load) | | Matching (Forward/ Load) | ||
| Line 78: | Line 112: | ||
|- | |- | ||
| HF Platen power (W) | | HF Platen power (W) | ||
| 100 | | '''100''' | ||
|- | |- | ||
| Matching (Forward/ Load) | | Matching (Forward/ Load) | ||
| Line 95: | Line 129: | ||
| 10°C | | 10°C | ||
|} | |} | ||
The highlighted sections are the main differences between the Process C conditions Vs new Imprint Trenches conditions: all of the changes would push the process to be more passivant, less etch aggressive and more directional. | |||
Is there any reason why these conditions are not suitable for the Imprint Trenches etch? | |||