Specific Process Knowledge/Lithography/TIspray: Difference between revisions
Created page with "{{:Specific Process Knowledge/Lithography/authors_generic}} '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/5214E click here]''' Resist AZ 5214E __TOC__ =Resist Description= TI Spray is specifically designed to be used for spray coating, and is a positive UV photoresist with image revers..." |
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[[Category: Lithography|Resist]] | [[Category: Lithography|Resist]] | ||
[[Category: Resist| | [[Category: Resist|TI Spray]] | ||
__TOC__ | __TOC__ | ||
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'''Typical image reversal parameters:''' | '''Typical image reversal parameters:''' | ||
*Reversal bake temperature: 110°C | *Reversal bake temperature: 110°C | ||
*Reversal bake time: 60-120 s | *Reversal bake time: 60 - 120 s | ||
*Flood exposure: 200-500 mJ/cm<sup>2</sup> | *Flood exposure: 200 - 500 mJ/cm<sup>2</sup> | ||
If TI Spray is baked after exposure, the exposed resist will cross-link, making it insoluble in the developer. This is called the "Reversal bake". The reversal bake activates cross-linking of the exposed areas, which "reverses" the polarity of the design. | If TI Spray is baked after exposure, the exposed resist will cross-link, making it insoluble in the developer. This is called the "Reversal bake". The reversal bake activates cross-linking of the exposed areas, which "reverses" the polarity of the design. When the substrate is flood-exposed after the reversal bake, the previously unexposed areas become soluble, and will be removed in the subsequent development. The reversal procedure effectively makes TI Spray a negative resist. | ||
The image reversal process greatly increases the sensitivity of TI Spray, and the dose of the image exposure is a critical parameter, especially if negative angled resist sidewalls are desired.<br> | The image reversal process greatly increases the sensitivity of TI Spray, and the dose of the image exposure is a critical parameter, especially if negative angled resist sidewalls are desired.<br> | ||
Half dose of the normal, positive process is a good starting point for optimization. Similarly, the reversal bake is also a critical step, and must be tightly controlled in order to achieve consistent results. If negative sidewalls are desired, 60- | Half dose of the normal, positive process is a good starting point for optimization. Similarly, the reversal bake is also a critical step, and must be tightly controlled in order to achieve consistent results. If negative sidewalls are desired, 60 - 120 s at 110°C is recommended (as well as a resist thickness above 2 µm), but if straight sidewalls are desired, 60 - 120 s at 120°C can be used. | ||
The flood exposure, on the other hand, is uncritical, and 2-5 times the normal positive process dose is generally used. | The flood exposure, on the other hand, is uncritical, and 2-5 times the normal positive process dose is generally used. | ||