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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/AFM:_Atomic_Force_Microscopy/AFM_Icon_Acceptance click here]'''  
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<!-- Updated 20250812 -->
''This page has been made by Berit Herstrøm @ DTU Nanolab''
==Accessories following the systems ==
==Accessories following the systems ==
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Phase: Phase imaging maps the phase lag between the periodic signal driving the cantilever and the oscillations of the cantilever. Changes in phase lag often indicate changes in the properties of the sample surface. Here the structuring in the graphene is very clear
Phase: Phase imaging maps the phase lag between the periodic signal driving the cantilever and the oscillations of the cantilever. Changes in phase lag often indicate changes in the properties of the sample surface. Here the structuring in the graphene is very clear


==AFM Icon-Pt 2: Acceptance test [[Image:section under construction.jpg|70px]]==
==AFM Icon-Pt 2: Acceptance test==
===Noise tests===
===Noise tests===
====Sensor noise====
====Sensor noise====
Tapping ]mode, OTESPA-R3 probe used. <br>
Tapping ]mode, OTESPA-R3 probe used. <br>
First we made a false engage (scanning in air):
First we made a false engage (scanning in air):
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===Demonstrating roughness measurements on silicon===
===Demonstrating roughness measurements on silicon===
#ScanAsyst with ScanAsyst-air
 
**CL on
====ScanAsyst with ScanAsyst-air====
**512x512
*CL on
**0dg
*512x512
**ScanAsyst noise threshold: 1
*0dg
**PeakForce amplitide 300 nm
*ScanAsyst noise threshold: 1
**Peak force frequency: 2 Hz
*PeakForce amplitide 300 nm
**Rq: 0.247 nm
*Peak force frequency: 2 Hz
##ScanAsyst with ScanAsyst-air
*Rq: 0.247 nm
**CL off
[[File:Roughness on Si 1 ScanAsyst with ScanAsyst-air CL on.JPG|400px]]
**512x512
====ScanAsyst with ScanAsyst-air====
**0dg
*CL off
**ScanAsyst noise threshold: 0.2
*512x512
**PeakForce amplitide 300 nm
*0dg
**Peak force frequency: 2 Hz
*ScanAsyst noise threshold: 0.2
**Rq: 0.235 nm
*PeakForce amplitide 300 nm
#ScanAsyst with TAP150A
*Peak force frequency: 2 Hz
**CL on
*Rq: 0.235 nm
**512x512
[[File:Roughness on Si 2 ScanAsyst with ScanAsyst-air CL off.JPG|400px]]
**0dg
====ScanAsyst with TAP150A====
**ScanAsyst noise threshold: 1
*CL on
**PeakForce amplitide 75 nm (was set as standard from the probe settings)
*512x512
**Peak force frequency: 2 Hz
*0dg
**Rq: 0.238/0.250 nm
*ScanAsyst noise threshold: 1
#Tapping mode with TAP150A
*PeakForce amplitude 75 nm (was set as standard from the probe settings)
**CL on
*Peak force frequency: 2 Hz
**512x512
*Rq: 0.238/0.250 nm
**0dg
[[File:Roughness on Si 3 ScanAsyst with TAP150A CL on A.JPG|400px]][[File:Roughness on Si 3 ScanAsyst with TAP150A CL on B.JPG|400px]]
**Rq: 0.214 nm
====Tapping mode with TAP150A====
#Tapping mode with RFESP-75
*CL on
**CL on
*512x512
**512x512
*0dg
**0dg
*Rq: 0.214 nm
**Rq: 0.224 nm
[[File:Roughness on Si 4 Tapping mode with TAP150A CL on.JPG|400px]]
====Tapping mode with RFESP-75====
*CL on
*512x512
*0dg
*Rq: 0.224 nm
[[File:Roughness on Si  5 Tapping mode with RFESP-75 CL on.JPG|400px]]
 
===Step measurement: Resist on silicon oxide===
SIO2ICP_30 (Si-SiO2-Resist)
*When scanning long lines and trenches scan 90 degrees to the probe and 90 degrees to the lines.
*During acceptance:
**Tapping mode: 3 µm structures (middle): 1.587µm
**Tapping mode: 3µm structures (edge): 1.541µm
**Peak Force tapping 3µm structures (edge) average: 1.497µm (tapping mode probe)
**Peak Force tapping with ScanAsyst probe: 1.509µm
SEM images showed about 1.55µm – so it seems like ScanAsyst  is pressing a little down in the resist compared with the SiO2 giving a too small height difference.
Therefor When scanning steps with difference materials, when one of the materials is soft and you need to know the height difference, then it seems to be best to use tapping mode.
We did not save the images. Therefor I remeasured a few days later:
====Tapping mode with TAP150A====
*CL on
*256x32
*0dg
*Step height: 1545/1532 nm
[[File:SiO2-resist step Tapping mode with TAP150A.JPG|400px]]
====ScanAsyst with TAP150A====
*CL on
*256x32
*0dg
*ScanAsyst noise threshold: 1
*PeakForce amplitide 75 nm (was set as standard from the probe settings)
*Peak force frequency: 2 Hz
*Step height: 1537 nm
[[File:SiO2-resist step ScanAsyst mode with TAP150A.JPG|400px]]
====ScanAsyst with ScanAsyst-air====
*CL on
*256x32
*0dg
*ScanAsyst noise threshold: 1
*PeakForce amplitide 150 nm (I had to increase it from the 75 nm)
*Peak force frequency: 2 Hz
*Step height: 1545 nm
[[File:SiO2-resist step ScanAsyst mode with ScanAsyst-air.JPG|400px]]
====Tapping mode with RFESP-75====
*CL on
*256*32
*0dg
*Step height: 1525 nm
[[File:SiO2-resist step Tapping mode with RFESP-75.JPG|400px]]
 
===High Aspect ratio sample===
High aspect ratio samples (e.g. 100 nm wide trenches 300 nm deep and 2 µm wide trenches 6µm deep).  The probes for this: FIB6-400A.
This was done and work spaces were created but no images was saved.
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