Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4: Difference between revisions
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[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4 click here]''' | [mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4 click here]''' | ||
[[Category: Equipment |Etch DRIE]] | [[Category: Equipment |Etch DRIE]] | ||
[[Category: Etch (Dry) Equipment|DRIE]] | [[Category: Etch (Dry) Equipment|DRIE]] | ||
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==Pegasus 4 - 150mm silicon oxide and silicon nitride etching== | ==Pegasus 4 - 150mm silicon oxide and silicon nitride etching== | ||
[[Image:Peg3and4 front 2.JPG |frame|right| | [[Image:Peg3and4 front 2.JPG |frame|right|x250px|The DRIE-Pegasus3 and DRIE-Pegasus4 operator station and cassette loading stations, {{photo1}}]] | ||
DRIE-Pegasus 4 is dedicated Silicon oxide and Silicon nitride etching. It is originally designed for silicon etching but gas mass flow controllers has been changed to optimize silicon oxide and silicon nitride etching. The system is setup for 6" wafers. Sampler samples has to be bonded to a 6" carrier to be etched in the system. | DRIE-Pegasus 4 is dedicated Silicon oxide and Silicon nitride etching. It is originally designed for silicon etching but gas mass flow controllers has been changed to optimize silicon oxide and silicon nitride etching. The system is setup for 6" wafers. Sampler samples has to be bonded to a 6" carrier to be etched in the system. | ||
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*[[/Barc Etch|Barc Etch]] | *[[/Barc Etch|Barc Etch]] | ||
*[[/SiO2 Etch|SiO2 Etch]] | *[[/SiO2 Etch|SiO2 Etch]] | ||
*[[/Silicon Nitride Etch|Silicon Nitride Etch]] | |||
*[[/Nitride Etch|Nitride etch with SiO2 etch recipes]] | *[[/Nitride Etch|Nitride etch with SiO2 etch recipes]] | ||
*[[/Slow etch|Slow etch of silicon nitride and silicon oxide]] | *[[/Slow etch|Slow etch of silicon nitride and silicon oxide]] | ||