Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300: Difference between revisions
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[[Category: Etch (Dry) Equipment|IBE]] | [[Category: Etch (Dry) Equipment|IBE]] | ||
[[Category: Thin Film Deposition|IBE]] | [[Category: Thin Film Deposition|IBE]] | ||
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=IBE/IBSD Ionfab 300: Milling and Dry Etching = | |||
[[Image:IBE_IBSD_udstyret_i_RR1.jpg|300x300px|thumb|IBE and IBSD: positioned in cleanroom A-1, {{photo1}}]] | |||
IBE/IBSD Ionfab 300 was manufactured by Oxford Instruments Plasma Technology [https://plasma.oxinst.com/products/ion-beam/ionfab]. It was installed at Nanolab in 2011. It was originally installed with the capability of doing both IBE and IBSD. In 2022 we have decommissioned the IBSD part. | |||
IBE/IBSD Ionfab 300 was | |||
IBE: Ion Beam Etch | IBE: Ion Beam Etch | ||
IBSD: Ion Beam Sputter Deposition | IBSD: Ion Beam Sputter Deposition (has been decommissioned 2022) | ||
This Ionfab300 from Oxford Instruments is capable of of | This Ionfab300 from Oxford Instruments is capable of of ion sputter etching/milling. | ||
The etching/milling with Argon alone is done by pure physical sputtering of the surface. This causes redeposition on the sidewalls leaving side wall angles at typically between 70-90 degrees (often closest to 70 degrees). | The etching/milling with Argon alone is done by pure physical sputtering of the surface. This causes redeposition on the sidewalls leaving side wall angles at typically between 70-90 degrees (often closest to 70 degrees). | ||
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<!-- give the link to the equipment info page in LabManager: --> | <!-- give the link to the equipment info page in LabManager: --> | ||
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=267 IBE/IBSD Ionfab 300+ in LabManager] | [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=267 IBE/IBSD Ionfab 300+ in LabManager] | ||
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=Process information= | |||
==Etch== | |||
*[http://www.semicore.com/reference/sputtering-yields-reference Compare sputter rates in different materials] | *[http://www.semicore.com/reference/sputtering-yields-reference Compare sputter rates in different materials] | ||
*[[/IBE process trends|Some general process trends]] | *[[/IBE process trends|Some general process trends]] | ||
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**[[/IBE Au etch#IBE Au etch with Ti mask|Au etch with Ti as masking material]] | **[[/IBE Au etch#IBE Au etch with Ti mask|Au etch with Ti as masking material]] | ||
**[[/IBE blazed gratings|Etching of blazed gratings]] | **[[/IBE blazed gratings|Etching of blazed gratings]] | ||
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==Deposition== | |||
'''<p style="color:red;">Deposition has been decommissioned on the system.</p>''' | |||
*[[/Crystal Settings|Crystal Thickness Monitor Settings]] | *[[/Crystal Settings|Crystal Thickness Monitor Settings]] | ||
*Results from the acceptance test: | *Results from the acceptance test: | ||
**[[/IBSD of TiO2|Deposition of TiO2]] | **[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide/IBSD of TiO2|Deposition of TiO2]] | ||
**[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2|Deposition of SiO2]] | **[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2|Deposition of SiO2]] | ||
**[[/IBSD of Si|Deposition of Si]] | **[[/IBSD of Si|Deposition of Si]] | ||
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==An overview of the performance of IBE/IBSD Ionfab 300 and some process related parameters== | ==An overview of the performance of IBE/IBSD Ionfab 300 and some process related parameters== | ||
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*Polymers | *Polymers | ||
*Capton tape | *Capton tape | ||
*Any other material, please ask | |||
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| style="background:LightGrey; color:black"|Possible masking material | | style="background:LightGrey; color:black"|Possible masking material | ||
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