Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions

VisualWikitext

@@ Line 1: / Line 1: @@
-[[Image:RTP_oven.jpg|300x300px|thumb|Jipelec RTP: Positioned in cleanroom 1]]
+{{cc-nanolab}}
+'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP click here]'''
+'''<p style="color:red;"> The Jipelec RTP has been decomissioned in March 2023. It has been replaced with the Jipelec RTP2.</span>'''
+[[Category: Equipment |Thermal Jipelec]]
+[[Category: Thermal process|Jipelec]]
+==Jipelec - Rapid Thermal Processing==
+[[Image:RTP_oven.jpg|300x300px|thumb|Jipelec RTP: Positioned in cleanroom A-4/ Photo: DTU Nanolab internal]]
+The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).
+'''The user manual, technical information and contact information can be found in LabManager:'''
+'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=164 Jipelec RTP]'''
+==Overview of the performance of the Jipelec RTP and some process related parameters==
+{| border="2" cellspacing="0" cellpadding="2"
+|-
+!style="background:silver; color:black;" align="center"|Purpose
+|style="background:LightGrey; color:black"|
+|style="background:WhiteSmoke; color:black"|RTP annealing
+|-
+!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
+|style="background:LightGrey; color:black"|Process Temperature
+|style="background:WhiteSmoke; color:black"|
+*0-1100 <sup>o</sup>C (only short time a the high temperatures - see the user manual)
+*III-V materials only to 450 <sup>o</sup>C
+*Temperature ramp up to 50 <sup>o</sup>C/min
+|-
+|style="background:LightGrey; color:black"|Process pressure
+|style="background:WhiteSmoke; color:black"|
+*1 atm
+*Vacuum
+|-
+|style="background:LightGrey; color:black"|Gases on the system
+|style="background:WhiteSmoke; color:black"|
+*N<sub>2</sub>
+|-
+!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
+|style="background:LightGrey; color:black"|Batch size
+|style="background:WhiteSmoke; color:black"|
+*One 50 mm or 100 mm wafer
+*Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide on the back)
+|-
+| style="background:LightGrey; color:black"|Substrate materials allowed
+|style="background:WhiteSmoke; color:black"|
+A carrier is always needed: For III-V materials and metals a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used
+*Silicon
+*Silicon oxide
+*Silicon nitride
+*Fused silica/quartz
+*Polysilicon
+*III-V materials (on graphite carrier, max 450 <sup>o</sup>C)
+*Some metals - (on graphite carrier). Ask the Thin Film group for permission
+|-
+|}