Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions

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-==Noble Furnace==
+{{cc-nanolab}}
-This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius.
+'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_Noble click here]'''
-The Noble Furnace is located in service room 3.
-[[Image:Noble.JPG|thumb|300x300px|A1 Bor Drive-in furnace. Positioned in cleanroom 2]]
+[[Category: Equipment |Thermal Noble]]
+[[Category: Thermal process|Noble]]
+[[Category: Furnaces|Noble]]
+'''<p style="color:red;"> The Noble furnace has been decomissioned in January 2020.</span>'''
+==Noble furnace==
+The Noble Furnace is used for annealing and oxidation of different samples. Annealing can be done in a nitrogen or argon atmosphere. A bubbler has also been installed in the furnace, so it is possible to do both wet and dry oxidations. The maximum temperature of the furnace is 1000 <sup>o</sup>C.
+In the Noble Furnaces more dirty samples with metals and some specific polymers are allowed. Different sample holder are available for wafers and smaller samples (placed on a Si carrier wafer).
+The furnace is located in service area Cx1.
+Please check the cross contamination information in LabManager before you use the furnace.
+[[Image:Noble.JPG|thumb|300x300px|Noble furnace. Positioned in service area Cx1/ Photo: DTU Nanolab internal]]
 '''The user manual, technical information and contact information can be found in LabManager:'''
-'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=150 Furnace: Noble]'''
+'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=150 Noble furnace]'''
 ==Overview of the performance of the Noble Furnace==
-{| border="2" cellspacing="0" cellpadding="0"
+{| border="2" cellspacing="0" cellpadding="2"
 |-
 !style="background:silver; color:black;" align="center"|Purpose
 |style="background:LightGrey; color:black"|
-|style="background:WhiteSmoke; color:black"|Oxide growth, annealing
+*Oxidation
+*Annealing
+|style="background:WhiteSmoke; color:black"|
+Oxidation:
+*Dry
+*Wet (with bubbler. Water steam + N<sub>2</sub>)
+Annealing:
+*N<sub>2</sub>
+*Ar
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
-*20-1000 <sup>o</sup>C
+*Up to 1000 <sup>o</sup>C
 |-
 |style="background:LightGrey; color:black"|Process pressure
@@ Line 30: / Line 53: @@
 |style="background:LightGrey; color:black"|Gasses on the system
 |style="background:WhiteSmoke; color:black"|
-*N<sub>2</sub>:0-5 sccm
+*N<sub>2</sub>: 0-5 SLM
-*O<sub>2</sub>: 0-5 sccm
+*O<sub>2</sub>: 0-5 SLM
+*Ar: 0-7 SLM
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-25 4" wafer (or 2" wafers) per run
+*1-25 100 mm wafers (or 50 mm wafers) per run
+*A number of smaller samples (placed on a Si carrier wafer)
 |-
 | style="background:LightGrey; color:black"|Substrate material allowed
 |style="background:WhiteSmoke; color:black"|
-*Silicon wafers (new from the box or RCA cleaned)
+*Silicon samples
-*Contact [mailto:furnace@danchip.dtu.dk furnace@danchip.dtu.dk] before annealing or oxidising metals in the furnace
+*Silicon samples with metals
+*Silicon sample with polymers (only approved materials)
 |-
 |}