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{{cc-nanolab}}
'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_Noble click here]'''
[[Category: Equipment |Thermal Noble]]
[[Category: Thermal process|Noble]]
[[Category: Furnaces|Noble]]
'''<p style="color:red;"> The Noble furnace has been decomissioned in January 2020.</span>'''
==Noble furnace==
==Noble furnace==
'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20
http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_Noble click here]'''


The Noble Furnace is mostly used for annealing and oxidation of different samples. Annealing can be done in a nitrogen or argon atmosphere. Recently (Autumn 2013) a bubler has also been installed in the furnace, so it is possible to do both wet and dry oxidations. The maximum temperature of the Noble furnace is 1000 <sup>o</sup>C.
The Noble Furnace is used for annealing and oxidation of different samples. Annealing can be done in a nitrogen or argon atmosphere. A bubbler has also been installed in the furnace, so it is possible to do both wet and dry oxidations. The maximum temperature of the furnace is 1000 <sup>o</sup>C.


In the Noble Furnaces more dirty samples with metal are allowed in the furnace. Different sample holder are available for wafers and smaller samples.  
In the Noble Furnaces more dirty samples with metals and some specific polymers are allowed. Different sample holder are available for wafers and smaller samples (placed on a Si carrier wafer).  


The furnace is located in in service area 3.  
The furnace is located in service area Cx1.


[[Image:Noble.JPG|thumb|300x300px|A1 Bor Drive-in furnace. Positioned in cleanroom 2]]
Please check the cross contamination information in LabManager before you use the furnace.  


[[Image:Noble.JPG|thumb|300x300px|Noble furnace. Positioned in service area Cx1/ Photo: DTU Nanolab internal]]


'''The user manual, technical information and contact information can be found in LabManager:'''
'''The user manual, technical information and contact information can be found in LabManager:'''
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==Overview of the performance of the Noble Furnace==
==Overview of the performance of the Noble Furnace==


{| border="2" cellspacing="0" cellpadding="0"  
{| border="2" cellspacing="0" cellpadding="2"  
|-
|-
!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|Oxide growth, annealing
*Oxidation
*Annealing
|style="background:WhiteSmoke; color:black"|
Oxidation:
*Dry
*Wet (with bubbler. Water steam + N<sub>2</sub>)
Annealing:
*N<sub>2</sub>
*Ar
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*20-1000 <sup>o</sup>C
*Up to 1000 <sup>o</sup>C
|-
|-
|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
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|style="background:LightGrey; color:black"|Gasses on the system
|style="background:LightGrey; color:black"|Gasses on the system
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*N<sub>2</sub>:0-5 SLM
*N<sub>2</sub>: 0-5 SLM
*O<sub>2</sub>: 0-5 SLM
*O<sub>2</sub>: 0-5 SLM
*Argon: 0-7 SLM
*Ar: 0-7 SLM
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-25 4" wafer (or 2" wafers) per run
*1-25 100 mm wafers (or 50 mm wafers) per run
*A number of smaller samples (placed on a Si carrier wafer)
|-
|-
| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon wafers (new from the box or RCA cleaned)
*Silicon samples
*Contact [mailto:furnace@danchip.dtu.dk furnace@danchip.dtu.dk] before annealing or oxidising metals in the furnace
*Silicon samples with metals
*Silicon sample with polymers (only approved materials)
|-
|-
|}
|}