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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thermal_Process/D4_III-V_Oven click here]'''
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''This page is written by DTU Nanolab  internal''
===<span style="color:Red">The D4 III-V Oven has been decomission in August 2019.</span>===
===<span style="color:Red">EXPIRED!!! The D4 III-V Oven has been removed from the cleanroom August 2019. The C2 III-V Oxidation furnace is being tested instead.</span>===
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[[Category: Equipment |Thermal III-V ]]
[[Category: Equipment |Thermal III-V ]]
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'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=187 III-V Oven (D4)]'''
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=187 III-V Oven (D4)]'''
==Process knowledge==
*[[Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_furnace_(D4)|Standard wet oxidation recipe on the III-V furnace]]


==Overview of the performance of the III-V Oven and some process related parameters==
==Overview of the performance of the III-V Oven and some process related parameters==

Latest revision as of 15:18, 3 June 2025

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

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The D4 III-V Oven has been decomission in August 2019.


III-V Oven (D4)

III-V Oven (D4). Positioned in cleanroom area F-3/ Photo: DTU Nanolab internal.

The III-V Oven (D4) is used for wet thermal oxidation of III-V devices, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.

The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.

Before use, devices have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.

Please check the cross contamination information in LabManager before you use the furnace.

The user manual and contact information can be found in LabManager:

III-V Oven (D4)

Overview of the performance of the III-V Oven and some process related parameters

Purpose
  • Wet oxidation of III-V dvices
Performance Lateral oxidation rate
  • Very sample dependent
Process parameter range Process temperature
  • 420 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2 (bobler)
  • N2
Substrates Batch size
  • Several smaller samples (placed vertically on a quartz plate)
Substrate materials allowed
  • III-V devices
  • Silicon