Jump to content

Specific Process Knowledge/Thermal Process/D4 III-V Oven: Difference between revisions

From LabAdviser
Bghe (talk | contribs)
No edit summary
Mmat (talk | contribs)
 
(8 intermediate revisions by 5 users not shown)
Line 1: Line 1:
{{cc-nanolab}}
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thermal_Process/D4_III-V_Oven click here]'''
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thermal_Process/D4_III-V_Oven click here]'''
<br>
===<span style="color:Red">The D4 III-V Oven has been decomission in August 2019.</span>===
<br>


[[Category: Equipment |Furnace]]
[[Category: Equipment |Thermal III-V ]]
[[Category: Thermal process|Furnace]]
[[Category: Thermal process|III-V]]
[[Category: Furnaces|III-V]]
[[Category: Furnaces|III-V]]


==III-V Oven (D4)==
==III-V Oven (D4)==
[[Image:IIIV_Oven.jpg|thumb|450x450px|III-V Oven (D4). Positioned in cleanroom area F-3.]]
[[Image:IIIV_Oven.jpg|thumb|450x450px|III-V Oven (D4). Positioned in cleanroom area F-3/ Photo: DTU Nanolab internal.]]


The III-V Oven (D4) is used for wet thermal oxidation of III-V devices, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.  
The III-V Oven (D4) is used for wet thermal oxidation of III-V devices, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.  


The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.  
The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.


Before use, devices have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.  
Before use, devices have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.  
Line 19: Line 24:


'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=187 III-V Oven (D4)]'''
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=187 III-V Oven (D4)]'''
==Process knowledge==
*[[Specific_Process_Knowledge/III-V_Process/III_V_thermal_processes/III_V_Oven/|Standard wet oxidation recipe on the III-V furnace]]


==Overview of the performance of the III-V Oven and some process related parameters==
==Overview of the performance of the III-V Oven and some process related parameters==

Latest revision as of 15:18, 3 June 2025

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

Feedback to this page: click here

The D4 III-V Oven has been decomission in August 2019.


III-V Oven (D4)

III-V Oven (D4). Positioned in cleanroom area F-3/ Photo: DTU Nanolab internal.

The III-V Oven (D4) is used for wet thermal oxidation of III-V devices, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.

The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.

Before use, devices have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.

Please check the cross contamination information in LabManager before you use the furnace.

The user manual and contact information can be found in LabManager:

III-V Oven (D4)

Overview of the performance of the III-V Oven and some process related parameters

Purpose
  • Wet oxidation of III-V dvices
Performance Lateral oxidation rate
  • Very sample dependent
Process parameter range Process temperature
  • 420 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2 (bobler)
  • N2
Substrates Batch size
  • Several smaller samples (placed vertically on a quartz plate)
Substrate materials allowed
  • III-V devices
  • Silicon