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Specific Process Knowledge/Thermal Process: Difference between revisions

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'''A stack furnaces:'''
'''A stack furnaces:'''
*[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards''
*[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards''
*[[/A2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - Not in use
*[[/A2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - ''For dry oxidation of Si wafers''
*[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep''
*[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep''
*[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers''  
*[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers''  
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'''C stack furnaces:'''
'''C stack furnaces:'''
*[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace (C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers''
*[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace (C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers''
*[[/C2 Furnace III-V oxidation |III-V oxidation furnace (C2)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.''
*[[/C2 Furnace General Purpose Annealing|General Purpose Annealing furnace (C2)]] - ''For annealing of different samples and materials.''
*[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers''
*[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers''
*[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing and oxidation of wafers containing e.g. aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> ''
*[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing and oxidation of wafers containing e.g. aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> ''