Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_5.25_HF_baths|1% HF / 5% HF / 10% HF]]</b>

*Mainly for etching deep into borofloat or quartz wafers. '''Only Nanolab staff are allowed to work with this HF'''.

*:[http://labmanager.nanolab.dtu.dk/d4Show.php?id=1897&mach=64 see APV here]

*Wet thermal oxide:~6nm/min(1%) / 25nm/min(5%) / 52nm/min(10%)

*1% / 5% HF

<gallery caption="Different places to do wet silicon oxide etch" widths="420px" heights="425px" perrow="5"> image:BHF clean.JPG|BHF in wetbench 04 in D-3 (Oxide etch 2: BHF (clean)). Wet silicon oxide etch bath positioned to the right in the wetbench. This bath can also be used for BHF with wetting agent.  

image:KOH_BHF.JPG|BHF in wetbench 01 Si etch in D-3 (Oxide etch 1: BHF). The BHF bath is positioned in the middle of the bench. This is primarily used to remove oxide before and after a Si etch.

image:BHF clean.JPG|BHF in wetbench 05 in D-3 (Oxide etch 3: 10% HF). Wet silicon oxide etch bath positioned to the right in the wetbench. This bath can also be used for BHF, BHF with wetting agent or 40% HF on request. This bath is also used for cleaning quarts carriers from the PECVD4 system.

image:RCA-HF.jpg|HF baths in RCA bench in B-1. These may only be used together with RCA cleaning and furnace processes.

</gallery>

==Comparing different HF baths==

! 1% HF in RCA Bench

! 10% HF in D3 wet bench 5 (Oxide etch 3)

! 1% HF Plastic beaker

|2"- 6" wafers or any that fits in a dedicated holder

==40% HF==

{|border="1" cellspacing="1" cellpadding="2" style="text-align:left;"  

! 40% HF in Plastic beaker, only done by Nanolab staff