Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

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 '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF) click here]'''
+'''''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''''
+'''''All links to Kemibrug (SDS) and Labmanager Including APV, requires login.'''''
 [[Category: Equipment|Etch Wet Silicon Oxide]]
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 '''The user manual for Oxide etch 2: BHF (clean), APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=378 by clicking here]
+'''The user manual for Oxide etch 3: 10% HF, APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=380 by clicking here]
 '''The user manual for various HF baths in RCA and Fume hoods, APV's and contact information can be found in LabManager''' [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=64 by clicking here]
+'''<big>Working with HF above 13% is only allowed by Nanolab staff</big>'''
 <!-- remember to remove the type of documents that are not present -->
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 !colspan="2" border="none" style="background:silver; color:black;" align="center"|Etchant
 |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_BHF_baths|BHF]]</b>
-|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_5.25_HF_baths|5% HF]]</b>
+|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_5.25_HF_baths|1% HF / 5% HF / 10% HF]]</b>
 |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_40.25_HF_baths|40% HF]]</b>
 |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#SiO_etch_bath|BOE 7:1 Etchant VLSI with Surfactant]]</b>
@@ Line 43: / Line 49: @@
 *Mainly for removing native oxide
 |style="background:WhiteSmoke; color:black"|
-*Mainly for etching deep into borofloat or quartz wafers
+*Mainly for etching deep into borofloat or quartz wafers. '''Only Nanolab staff are allowed to work with this HF'''.
 |style="background:WhiteSmoke; color:black"|
 *Etching of silicon oxide - especially for etching small holes
@@ Line 49: / Line 55: @@
 |style="background:LightGrey; color:black"|Link to safety APV and SDS (You must be logged in to Kemibrug to view SDSs)
 |style="background:WhiteSmoke; color:black"|
-*:[http://labmanager.danchip.dtu.dk/d4Show.php?id=1897&mach=64 see APV here]
+*:[http://labmanager.nanolab.dtu.dk/d4Show.php?id=1897&mach=64 see APV here]
 *:[https://kemibrug.dk/Kemikalier/Action?id=RCU2MHolYzIlODIlN2UlYzIlODB2JWMyJTgxJTdleiVjMiU4N0RZeiVjMiU4OXYlN2UlYzIlODElYzIlODhESkhKSUxMVGQlYzIlODclN2N2JWMyJTgzJTdlJWMyJTg4diVjMiU4OSU3ZSVjMiU4NCVjMiU4MyVjMiU4OCU1ZVlSSQ==#K see SDS here]
 |style="background:WhiteSmoke; color:black"|
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 *Wet thermal oxide:75-80nm/min
 |style="background:WhiteSmoke; color:black"|
-*Wet thermal oxide:~25nm/min
+*Wet thermal oxide:~6nm/min(1%) / 25nm/min(5%) / 52nm/min(10%)
 |style="background:WhiteSmoke; color:black"|
 *Boronfloat and quartz: ~3-4 μm/min
@@ Line 98: / Line 104: @@
 *BHF (12%HF with Ammoniumflouride)
 |style="background:WhiteSmoke; color:black"|
-*5% HF
+*1% / 5% HF
 |style="background:WhiteSmoke; color:black"|
 *40% HF
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 <br clear="all" />
-<gallery caption="Different places to do wet silicon oxide etch" widths="220px" heights="225px" perrow="5"> image:BHF clean.JPG|BHF clean wetbench 04 in D-3. Wet silicon oxide etch bath positioned to the right in the wetbench. This bath can also be used for BHF with wetting agent.
+<gallery caption="Different places to do wet silicon oxide etch" widths="420px" heights="425px" perrow="5"> image:BHF clean.JPG|BHF in wetbench 04 in D-3 (Oxide etch 2: BHF (clean)). Wet silicon oxide etch bath positioned to the right in the wetbench. This bath can also be used for BHF with wetting agent.
-image:KOH_BHF.JPG|BHF in wetbench 01 Si etch in D-3 (Oxide etch 1: BHF.) The BHF bath is positioned in the middle of the bench. This is primarily used to remove oxide before and after a Si etch.
+image:KOH_BHF.JPG|BHF in wetbench 01 Si etch in D-3 (Oxide etch 1: BHF). The BHF bath is positioned in the middle of the bench. This is primarily used to remove oxide before and after a Si etch.
-image:RCA-HF.jpg|HF baths in RCA bench in B-1.
+image:BHF clean.JPG|BHF in wetbench 05 in D-3 (Oxide etch 3: 10% HF). Wet silicon oxide etch bath positioned to the right in the wetbench. This bath can also be used for BHF, BHF with wetting agent or 40% HF on request. This bath is also used for cleaning quarts carriers from the PECVD4 system.
-image:Stinkskab RR2.jpg|The 5% HF bath in 'Fume hood(RCA)' in cleanroom B-1 is only for use during special RCA cleaning processes inside the fume hood. </gallery>
+image:RCA-HF.jpg|HF baths in RCA bench in B-1. These may only be used together with RCA cleaning and furnace processes.
+</gallery>
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 <br clear="all" />
-==Comparing different 5% HF baths==
+==Comparing different HF baths==
 {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
 |-
@@ Line 233: / Line 240: @@
 |-style="background:silver; color:black"
 !
-! 5% HF in RCA Bench
+! 1% HF in RCA Bench
-! 5% HF PP-bath
+! 10% HF in D3 wet bench 5 (Oxide etch 3)
-! 5% HF Plastic beaker
+! 1% HF Plastic beaker
 |-
@@ Line 248: / Line 255: @@
 !Size of substrate
 |2"-6" wafers
-|2"- 4" wafers or any that fits in a dedicated holder
+|2"- 6" wafers or any that fits in a dedicated holder
 |2"- 4" wafers or any that fits in a dedicated holder
 |-
@@ Line 261: / Line 268: @@
 <br clear="all" />
-==Comparing different 40% HF baths==
+==40% HF==
-{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
+{|border="1" cellspacing="1" cellpadding="2" style="text-align:left;"
 |-
 |-style="background:silver; color:black"
 !
-! 40% HF PP-bath
+! 40% HF in Plastic beaker, only done by Nanolab staff
-! 40% HF Plastic beaker
 |-
 |-style="background:WhiteSmoke; color:black"
 !Batch size!
-|1-25 wafers at a time
 |1 wafer at a time
 |-
@@ Line 279: / Line 284: @@
 |-style="background:LightGrey; color:black"
 !Size of substrate
-|Any that fits to a dedicated holder
 |Any that fits to a dedicated holder
 |-
 |-style="background:WhiteSmoke; color:black"
 !Allowed materials
-|All materials
 |All materials
 |-
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 <br clear="all" />
-==SiO etch bath==
+==BOE 7:1 Etchant VLSI with Surfactant bath==
 {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
 |-
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 |-style="background:silver; color:black"
 !
-! SiO etch bath
+! BOE 7:1 Etchant VLSI with Surfactant bath
 |-
 |-style="background:WhiteSmoke; color:black"
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 Amorphous silicon can be used as a mask fro SiO2 etching.<br/>
 For very long and deep etches of SiO2/Quartz (several hours/micrometers) <br/>
-we have indications that show that it is not good to use the SiO etch. <br/>
+we have indications that show that it is not good to use the BOE 7:1 Etchant VLSI with Surfactant etch. <br/>
-The amorphous silicon has small holes (etch pits) which the SiO etch penetrates and the SiO2 below is etched.
+The amorphous silicon has small holes (etch pits) which the BOE 7:1 Etchant VLSI with Surfactant etch penetrates and the SiO2 below is etched.
 |-
 |}