Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions
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[[Category: Equipment | | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Pretreatment click here]''' | ||
[[Category: Equipment|Pretreatment]] | |||
[[Category: Lithography|Pretreatment]] | [[Category: Lithography|Pretreatment]] | ||
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==HMDS== | ==HMDS== | ||
In the HMDS priming process, the -OH groups on the surface of the substrate are replaced with Si(CH<sub>3</sub>)<sub>3</sub>, thus changing the surface from hydrophilic to (more) hydrophobic. Substrates with surfaces of silicon or | In the HMDS priming process, the -OH groups on the surface of the substrate are replaced with Si(CH<sub>3</sub>)<sub>3</sub>, thus changing the surface from hydrophilic to (more) hydrophobic. Substrates with surfaces of silicon, or its oxides/nitrides, all work very well with HMDS pretreatment. | ||
Other semiconductors, insulators, or metals that form -OH groups on the surface may be suitable as well. The shelf life of substrates primed using HMDS (vapor phase) is long, maybe even several weeks. | |||
==Dip/spin-on adhesion promoter== | ==Dip/spin-on adhesion promoter== | ||
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==Comparing pretreatment methods== | ==Comparing pretreatment methods== | ||
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! | ! | ||
![[Specific Process Knowledge/Lithography/Pretreatment# | ![[Specific Process Knowledge/Lithography/Pretreatment#HMDS_2|HMDS]] | ||
![[Specific Process Knowledge/Lithography/Pretreatment#Buffered HF-Clean|Buffered HF-Clean]] | ![[Specific Process Knowledge/Lithography/Pretreatment#Buffered HF-Clean|Buffered HF-Clean]] | ||
![[Specific Process Knowledge/Lithography/Pretreatment#Oven 250C|Oven 250C]] | ![[Specific Process Knowledge/Lithography/Pretreatment#Oven 250C|Oven 250C]] | ||
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!Restrictions | !Restrictions | ||
| | |Low Tg polymer substrates, type IV films, and resist/polymer on substrate | ||
i.e. no resist coated wafers or | i.e. no resist coated wafers or Crystalbonded chips! | ||
|Wafers with metal is not allowed | |Wafers with metal is not allowed | ||
|Resist is not allowed | |Resist is not allowed | ||
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Overview of what pretreatment is used for various surfaces at DTU Nanolab. Parentheses () indicate the method is not the optimal choice, or that the information is taken from product information supplied by manufacturers. | Overview of what pretreatment is used for various surfaces at DTU Nanolab. Parentheses () indicate the method is not the optimal choice, or that the information is taken from product information supplied by manufacturers. | ||
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=HMDS= | =HMDS= | ||
The chemical treatment with hexamethyldisilazane (HMDS) before the spin coating can be used to promote the adhesion for photoresist. Vapor priming with HMDS leaves a mono-layer of TMS (trimethylsilyl) on the Si or SiO<sub>2</sub> surface. The process dehydrates the substrate surface, and lowers the surface | The chemical treatment with hexamethyldisilazane (HMDS) before the spin coating can be used to promote the adhesion for photoresist. Vapor priming with HMDS leaves a mono-layer of TMS (trimethylsilyl) on the Si or SiO<sub>2</sub> surface. The process dehydrates the substrate surface, and lowers the surface energy to promote better wetting. | ||
The molecular formula for hexamethyldisilazane, or bis(trimethylsilyl)amine, is C<sub>6</sub>H<sub>19</sub>NSi<sub>2</sub> | The molecular formula for hexamethyldisilazane, or bis(trimethylsilyl)amine, is C<sub>6</sub>H<sub>19</sub>NSi<sub>2</sub>. | ||
[[ | [[File:HMDS priming schematic.png|400px|thumb|right|Schematic of the HMDS vapor priming process]] | ||
<br clear="all" /> | <br clear="all" /> | ||
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==Comparing HMDS priming== | ==Comparing HMDS priming== | ||
{| border=" | {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" | ||
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | ||
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1 min / wafer | 1-2 min / wafer | ||
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==Oven: HMDS 2== | ==Oven: HMDS 2== | ||
[[Image:HMDS2.jpg| | [[Image:HMDS2.jpg|400px|thumb|The Oven: HMDS 2 oven is located in E-5.]] | ||
The user manual, user APV, and contact information can be found in LabManager: | |||
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=358 Oven: HMDS 2] - '''requires login''' | |||
'''Process information:''' | '''Process information:''' | ||
*Recipe 1: baseline prime process with 5 min HMDS priming time | *Recipe 1: baseline prime process with 5 min HMDS priming time | ||
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==Spin Coater: Gamma UV== | ==Spin Coater: Gamma UV== | ||
[[Image:HMDS gammaUV.jpg| | [[Image:HMDS gammaUV.jpg|400px|thumb|HMDS module (top) in Spin Coater: Gamma UV in E-5.]] | ||
The user manual, user APV, and contact information can be found in LabManager: | |||
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=359 Spincoater: Gamma UV] | [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=359 Spincoater: Gamma UV] - '''requires login''' | ||
Additional information about the spin coater and processes can be found in Labadviser: | |||
[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV Spin Coater: Gamma UV] | [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV Spin Coater: Gamma UV] | ||
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==Spin Coater: Gamma e-beam & UV== | ==Spin Coater: Gamma e-beam & UV== | ||
[[image:Gamma_4M_-_E-beam_&_UV_full.JPG| | [[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|thumb|Spin Coater: Gamma e-beam & UV in E-5.]] | ||
The user manual, user APV, and contact information can be found in LabManager: | |||
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach= | [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=417 Spin Coater: Gamma e-beam & UV] - '''requires login''' | ||
Additional information about the spin coater and processes can be found in Labadviser: | |||
[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV Spin Coater: Gamma e-beam & UV] | [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV Spin Coater: Gamma e-beam & UV] | ||
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=Buffered HF-Clean= | =Buffered HF-Clean= | ||
[[image:BHF clean.JPG| | [[image:BHF clean.JPG|400px|thumb||BHF clean wetbench 04 in D-3.]] | ||
Another commonly used method to render the surface of silicon wafers hydrophobic is the dilute HF dip. | Another commonly used method to render the surface of silicon wafers hydrophobic is the dilute HF dip. | ||
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The native oxide layer will be removed by 30 seconds of etching and this will promote the resist adhesion on the Si substrates. We recommend to spin coat resist as soon as possible after the procedure. | The native oxide layer will be removed by 30 seconds of etching and this will promote the resist adhesion on the Si substrates. We recommend to spin coat resist as soon as possible after the procedure. | ||
[https://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=378 Buffered HF-Clean in LabManager] | The user manual, user APV, and contact information can be found in LabManager: | ||
[https://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=378 Buffered HF-Clean in LabManager] - '''requires login''' | |||
Additional information about the spin coater and processes can be found in Labadviser: | |||
[[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]] | [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]] | ||
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