Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinano32: Difference between revisions
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== The Sinano3.2 recipe == | == The Sinano3.2 recipe == | ||
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|+ '''Recipe Sinano3.2''' | |+ '''Recipe Sinano3.2''' | ||
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| Mask | | Mask | ||
| 180 nm zep etched down to 110 nm | | The [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/nanoetch/180nmzep|180 nm zep resist]] etched down to 110 nm | ||
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Latest revision as of 07:36, 4 April 2025
The Sinano3.2 recipe
| Recipe | Gas | BCl3 5 sccm, HBR 15 sccm |
|---|---|---|
| Pressure | 2 mTorr, Strike 3 secs @ 5 mTorr | |
| Power | 900 W CP, 60 W PP | |
| Temperature | 20 degs | |
| Hardware | 100 mm Spacers | |
| Time | 120 secs | |
| Conditions | Run ID | 426, 428 ID |
| Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | |
| Mask | The 180 nm zep resist etched down to 110 nm |
- The results of the Sinano3.2 recipe
-
The 30 nm trenches -
The 60 nm trenches -
The 90 nm trenches -
The 120 nm trenches -
The 150 nm trenches
| Nominal trench line width | ' | ' | 30 | 60 | 90 | 120 | 150 | Average | Std. dev. |
| Etch rate | nm/min | 67 | 91 | 98 | 100 | 105 | 92 | 15 | |
| Sidewall angle | degs | 82 | 83 | 82 | 82 | 81 | 82 | 1 | |
| CD loss | nm/edge | -14 | -14 | -18 | -15 | -15 | -15 | 2 | |
| CD loss foot | nm/edge | -14 | -5 | -3 | 3 | 6 | -3 | 8 | |
| Bowing | 10 | 16 | 17 | 15 | 17 | 15 | 3 | ||
| Bottom curvature | -41 | -11 | -6 | 6 | 6 | -9 | 19 | ||
| Zep etch rate | 40 |